DATA SHEET
0.32
+0.1
–0.05
1.5
2.8 ±0.2
0.95 0.95
1.9
2.9 ±0.2
0.16
+0.1
–0.06
0.8
1.1 to 1.4
0 to 0.1
0.65
+0.1
–0.15
MOS FIELD EFFECT TRANSISTOR
µ
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
PA602T
The µPA602T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA603T
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) 100 mA
Drain Current (pulse) ID(pulse)* 200 mA
Total Power Dissipation PT 300 (Total) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. G11249EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
©
1996
µ
PA602T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±1.0
Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA 0.8 1.4 1.8 V
Forward Transfer Admittance |yfs|VDS = 5.0 V, ID = 10 mA 20 mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance
RDS(on)1 VGS = 4.0 V, ID = 10 mA 19 30 Ω
RDS(on)2 VGS = 10 V, ID = 10 mA 15 25 Ω
Input Capacitance Ciss VDS = 5.0 V, VGS = 0, f = 1.0 MHz 16 pF
Output Capacitance Coss 12 pF
Reverse Transfer Capacitance Crss 3pF
Turn-On Delay Time td(on) VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, 17 ns
Rise Time tr
ID = 10 mA, RL = 500 Ω
10 ns
Turn-Off Delay Time td(off) 68 ns
Fall Time tf 38 ns
µ
A
µ
A
Marking: IA
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
V
PG.
GS
V
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
GS
R
DUT
L
V
G
R
Gate
voltage
waveform
DD
Drain
current
10 %
0
I
D
10 % 10 %
90 %
V
I
D
waveform
t
d(on)
t
r
t
t
on
GS(on)
d(off)
t
off
90 %
90 %
t
f
2