NEC PD4664312-X Technical data

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
PD4664312-X
µµµµ
64M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The
PD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.
µ
The
PD4664312-X is packed in 93-pin TAPE FBGA.
µ

Features

4,194,304 words by 16 bits organization
Fast access time: 65, 75 ns (MAX.)
Fast page access time: 18, 25 ns (MAX.)
Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
Low voltage operation:2.7 to 3.1 V (-B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X)
= –25 to +85 °C
Operating ambient temperature: T
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Density of memory cell data hold is variable
A
PD4664312 Access Operating supply Operating Supply current
µ
time voltage ambient At operating At standby µA (MAX.)
ns (MAX.) V temperature mA (MAX.) Density of data hold
Chip I/O °C 64M bits 16M bits 8M bits 4M bits 0M bit
-B65X 65 2.7 to 3.1 –25 to +85 45 100 60 50 45 10
Note
-BE75X
Note Under development
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M15867EJ5V0DS00 (5th edition) Date Published August 2002 NS CP (K) Printed in Japan
75 2.7 to 3.1 1.65 to 2.1 40
The mark  shows major revised points.
©
2001
PD4664312-X
µµµµ

Ordering Information

Part number Package Access time Operating supply voltage Operating
ns (MAX.) V temperature
Chip I/O °C
PD4664312F9-B65X-CR2 93-pin TAPE FBGA (12 x 9) 65 2.7 to 3.1 –25 to +85
µ
PD4664312F9-BE75X-CR2
µ
Note Under development
Note
75 2.7 to 3.1 1.65 to 2.1
2
Preliminary Data Sheet M15867EJ5V0DS

Pin Configurations

/xxx indicates active low signal.
93-pin TAPE FBGA (12 x 9)
PD4664312F9-B65X-CR2 ]
[
µµµµ
PD4664312-X
µµµµ
10
Top View
P
BCDEFGHJKLM
A
ABCDEFGH
NC
NC
NC
NC
A15
A11
A8
/WE V
NC /LB
A7 /OE
NC
NCNC
A12 A19
MODE A20
/UB
9 8 7 6 5 4 3 2 1
N
NC NCNC NC A21 NC GND A13
A18
A5 I/O8
A14 A10 NC NC A17
A4 A1A2
10
9 8 7 6 5 4 3 2 1
Top View
A16
NC
I/O6 I/O13A9
NC NC
I/O1
GND
A0A3
NCNC
Bottom View
NP
M
LKJHGFEDCBA
NC
NC
/CS
I/O14
I/O5
NC
CC
I/O11NCNC
I/O2
I/O15
I/O4 I/O3 I/O9
NC
I/O7
I/O12
I/O10
I/O0A6
MKLJ
NC NC NCNC
NCNC
NCNC NCNC
NCNC NCNC
N
NC
NC
NCNC
P
NC
NC
A0 to A21 : Address inputs
I/O0 to I/O15 : Data inputs / outputs
/CS : Chip Select
MODE : Standby mode
/LB, /UB : Byte data select
V
CC
GND : Ground
Note
NC
/WE : W rite enable
/OE : Output enable
Note Some signals can be applied because this pin is not internally connected.
Remarks Refer to Package Drawing for the index mark.
Preliminary Data Sheet M15867EJ5V0DS
: Power supply
: No Connection
3
93-pin TAPE FBGA (12 x 9)
PD4664312F9-BE75X-CR2 ]
[
µµµµ
PD4664312-X
µµµµ
10
Top View
P
BCDEFGHJKLM
A
ABCDEFGH
NC
NC
NC
NC
A15
A11
A8
/WE V
NC /LB
A7 /OE
NC
NCNC
A12 A19
MODE A20
/UB
9 8 7 6 5 4 3 2 1
N
NC NCNC NC A21 NC GND A13
A18
A5 I/O8
A14 A10 NC NC A17
A4 A1A2
10
9 8 7 6 5 4 3 2 1
Top View
A16
NC
I/O6 I/O13A9
NC NC
I/O1
GND
A0A3
NCNC
Bottom View
NP
M
LKJHGFEDCBA
NC
NC
/CS
I/O14
I/O5
CC
CC
Q
V I/O11NCNC
I/O2
I/O15
I/O4 I/O3 I/O9
NC
I/O7
I/O12
I/O10
I/O0A6
MKLJ
NC NC NCNC
NCNC
NCNC NCNC
NCNC NCNC
N
NC
NC
NCNC
P
NC
NC
A0 to A21 : Address inputs
I/O0 to I/O15 : Data inputs / outputs
/CS : Chip Select
MODE : Standby mode
/WE : W rite enable
/LB, /UB : Byte data select
V
CC
V
Q : Input / Output power supply
CC
GND : Ground
Note
NC
/OE : Output enable
Note Some signals can be applied because this pin is not internally connected.
Remarks Refer to Package Drawing for the index mark.
4
Preliminary Data Sheet M15867EJ5V0DS
: Power supply
: No Connection

Block Diagram

V
CC
VCCQ
Refresh
control
Standby mode control
PD4664312-X
µµµµ
GND
A0
A21
I/O0 to I/O7
I/O8 to I/O15
/CS
Refresh counter
Address
buffer
Row
decoder
Input data
controller
Memory cell array
67,108,864 bits
Sense amplifier /
Switching circuit
Column decoder
Address buffer
Output data
controller
MODE
/LB
/UB
/WE
/OE
Remark VCCQ is the input / output power supply for -BE75X.
Preliminary Data Sheet M15867EJ5V0DS
5
PD4664312-X
µµµµ
Truth Table
/CS MODE /OE /WE /LB /UB Mode I/O Supply
I/O0 to I/O7 I/O8 to I/O15 current
HH×××× Not selected (Standby Mode 1) High-Z High-Z I
× H ××H H Not selected (Standby Mode 1) High-Z High-Z
× L ×××× Not selected (Standby Mode 2)
Note
High-Z High-Z I
LHHH×× Output disable High-Z High-Z I
L H L L Word read D
L H Lower byte read D
OUT
OUT
H L Upper byte read High-Z D
HLLL Word write D
L H Lower byte write D
IN
IN
H L Upper byte write High-Z D
OUT
D
High-Z
OUT
IN
D
High-Z
IN
Note MODE pin must be fixed to high level except Standby Mode 2. (refer to 2.3 Standby Mode Status Transition).
Remark ×: VIH
or VIL, H: VIH, L: V
IL
SB1
SB2
CCA
6
Preliminary Data Sheet M15867EJ5V0DS
PD4664312-X
µµµµ
CONTENTS
1. Initialization .................................................................................................................................................................... 8
2. Partial Refresh ............................................................................................................................................................... 9
2.1 Standby Mode........................................................................................................................................................... 9
2.2 Density Switching......................................................................................................................................................9
2.3 Standby Mode Status Transition............................................................................................................................... 9
2.4 Addresses for Which Partial Refresh Is Supported ................................................................................................ 10
3. Page Read Operation .................................................................................................................................................. 11
3.1 Features of Page Read Operation.......................................................................................................................... 11
3.2 Page Length ...........................................................................................................................................................11
3.3 Page-Corresponding Addresses............................................................................................................................. 11
3.4 Page Start Address................................................................................................................................................. 11
3.5 Page Direction ........................................................................................................................................................ 11
3.6 Interrupt during Page Read Operation.................................................................................................................... 11
3.7 When page read is not used................................................................................................................................... 11
4. Mode Register Settings................................................................................................................................................ 12
4.1 Mode Register Setting Method ............................................................................................................................... 12
4.2 Cautions for Setting Mode Register........................................................................................................................ 13
5. Electrical Specifications ............................................................................................................................................... 14
6. Timing Charts............................................................................................................................................................... 20
7. Package Drawing......................................................................................................................................................... 30
8. Recommended Soldering Conditions ..........................................................................................................................31
9. Revision History ........................................................................................................................................................... 32
Preliminary Data Sheet M15867EJ5V0DS
7
PD4664312-X
µµµµ

1. Initialization

Initialize the µPD4664312-X at power application using the following sequence to stabilize internal circuits.
(1) Following power application, make MODE high level after fixing MODE to low level for the period of t
/CS high level before making MODE high level.
(2) /CS and MODE are fixed to high level for the period of t
Normal operation is possible after the completion of initialization.
Figure1-1. Initialization Timing Chart
MHCL
.
VHMH
. Make
Initialization
/CS (Input)
t
CHMH
t
VHMH
MODE (Input)
V
CC
VCC (MIN.)
Cautions 1. Make MODE low level when starting the power supply.
2. t
is specified from when the power supply voltage reaches the prescribed minimum value (V
VHMH
(MIN.)).
t
MHCL
Normal Operation
CC
8
Preliminary Data Sheet M15867EJ5V0DS
PD4664312-X
µµµµ

2. Partial Refresh

2.1 Standby Mode

In addition to the regular standby mode (Standby Mode 1) with a 64M bits density, Standby Mode 2, which performs
partial refresh, is also provided.

2.2 Density Switching

In Standby Mode 2, the densities that can be selected for performing refresh are 16M bits, 8M bits, 4M bits, and 0M bit.
The density for performing refresh can be set with the mode register. Once the refresh density has been set in the
mode register, these settings are retained until they are set again, while applying the power supply. However, the mode
register setting will become undefined if the power is turned off, so set the mode register again after power application.
(For how to perform mode register settings, refer to section 4. Mode Register Settings.)

2.3 Standby Mode Status Transition

In Standby Mode 1, MODE and /CS are high level, or MODE, /LB and /UB are high level. In Standby Mode 2, MODE is
low level. In Standby Mode 2, if 0M bit is set as the density, it is necessary to perform initialization the same way as after
applying power, in order to return to normal operation from Standby Mode 2. When the density has been set to 16M bits,
8M bits, or 4M bits in Standby Mode 2, it is not necessary to perform initialization to return to normal operation from
Standby Mode 2.
For the timing charts, refer to Figure 6-14. Standby Mode 2 (data hold: 16M bits / 8M bits / 4M bits) Entry / Exit
Timing Chart, Figure 6-15. Standby Mode 2 (data not held) Entry / Exit Timing Chart.
Preliminary Data Sheet M15867EJ5V0DS
9
Figure 2-1. Standby Mode State Machine
Power On
Initialization
Initial State
PD4664312-X
µµµµ
IL
MODE = VIH, /CS = VIH or /LB, /UB = VIH
Standby
Mode 1
/CS = VIL, MODE = VIH
/CS = V
Active
/CS = VIL, MODE = V
MODE = VIL
MODE = VIL

2.4 Addresses for Which Partial Refresh Is Supported

MODE = VIH
MODE = VIL
MODE = VIL
IH
Standby Mode 2
(16M bits / 8M bits
/ 4M bits)
Standby Mode 2
(Data not held)
Data hold density Correspondence address
16M bits 000000H to 0FFFFFH
8M bits 000000H to 07FFFFH
4M bits 000000H to 03FFFFH
10
Preliminary Data Sheet M15867EJ5V0DS

3. Page Read Operation

3.1 Features of Page Read Operation

Features 8 Words Mode
Page length 8 words
Page read-corresponding addresses A2, A1, A0
Page read start address Don’t care
Page direction Don’t care
Interrupt during page read operation Enabled
Note An interrupt is output when /CS = H or in case A3 or a higher address changes.

3.2 Page Length

8 words is supported as the page lengths.
Note
PD4664312-X
µµµµ

3.3 Page-Corresponding Addresses

The page read-enabled addresses are A2, A1, and A0. Fix addresses other than A2, A1, and A0 during page read
operation.

3.4 Page Start Address

Since random page read is supported, any address (A2, A1, A0) can be used as the page read start address.

3.5 Page Direction

Since random page read is possible, there is not restriction on the page direction.

3.6 Interrupt during Page Read Operation

When generating an interrupt during page read, either make /CS high level or change A3 and higher addresses.

3.7 When page read is not used

Since random page read is supported, even when not using page read, random access is possible as usual.
Preliminary Data Sheet M15867EJ5V0DS
11
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