NEC NNCD12E, NNCD3.3E, NNCD5.1E, NNCD4.7E, NNCD3.9E Datasheet
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DATA SHEET
(
)
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
Package having allowable power dissipation of 200 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation P 200 mW
Surge Reverse Power P
RSM 100 W (tT = 10
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 °C to +150 °C
µ
s 1 pulse) Fig. 6
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
+0.1
0.950.3 0.95
2.9 ± 0.21.1 to 1.4
–0.05
0.4
1.5 0.65
2
1
PIN CONNECTION
1. NC
2. Anode
3. Cathode
SC-59
3
Marking
0 to 0.1
EIAJ
+0.1
+0.1
–0.05
0.4
–0.06
0.16
+0.1
–0.15
Document No. D11773EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NNCD3.3E to NNCD12E
Breakdown Voltage
VBR (V)
Type Number
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V) TYP.
NNCD3.3E 3.10 3.50 5 130 5 20 1.0 220 30
NNCD3.6E 3.40 3.80 5 130 5 10 1.0 210 30
NNCD3.9E 3.70 4.10 5 130 5 10 1.0 200 30
NNCD4.3E 4.01 4.48 5 130 5 10 1.0 180 30
NNCD4.7E 4.42 4.90 5 130 5 10 1.0 170 30
NNCD5.1E 4.84 5.37 5 130 5 5 1.5 160 30
NNCD5.6E 5.31 5.92 5 80 5 5 2.5 140
NNCD6.2E 5.86 6.53 5 50 5 2 3.0 120
NNCD6.8E 6.47 7.14 5 30 5 2 3.5 110 30
NNCD7.5E 7.06 7.84 5 30 5 2 4.0 90 30
NNCD8.2E 7.76 8.64 5 30 5 2 5.0 90 30
NNCD9.1E 8.56 9.55 5 30 5 2 6.0 90 30
NNCD10E 9.45 10.55 5 30 5 2 7.0 80 30
NNCD11E 10.44 11.56 5 30 5 2 8.0 70 30
NNCD12E 11.42 12.60 5 35 5 2 9.0 70 30
Note 1
Dynamic
Impedance
Zz (Ω)
Reverse Leakage Capacitance E.S.D Voltage
Note 2
IR (µA) Ct (pF) (kV)
TEST
CONDITION CONDITION
VR = 0 V
f = 1 MHz
MIN.
30
30
TEST
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
200
150
100
P - Power Dissipation - mW
50
0
0
25 50 75
A
- Ambient Temperature - °C
T
NNCD3.3E to NNCD12E
100 125 150
Fig. 2 IT - VBR CHARACTERISTICS Fig. 3 IT - VBR CHARACTERISTICS
NNCD7.5E
NNCD6.8E
100 m
NNCD3.3E
NNCD3.6E
10 m
NNCD3.9E
NNCD4.3E
1 m
NNCD4.7E
µ
100
10
µ
- On State Current - A
1
µ
T
I
NNCD5.1E
100 n
NNCD5.6E
10 n
1 n
NNCD6.2E
012345678910
BR
- Breakdown Voltage - V
V
NNCD8.2E
NNCD9.1E
100 m
NNCD11E
NNCD10E
10 m
1 m
µ
100
10
µ
- On State Current - A
1
µ
T
I
100 n
10 n
1 n
0789101112131415
BR
- Breakdown Voltage - V
V
NNCD12E
3
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