Datasheet NNCD5.6MG Datasheet (NEC)

DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD5.6MG to NNCD6.8MG
LOW CAPACITANCE HIGH ESD TYPE
(QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
This product series is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge) protection. Based on the IEC61000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, and capacitance is small with 20 pF TYP. This product series is the most suitable for the ESD protection in the high-speed data communication bus such as USB.
With four elements mounted in the 5-PIN Mini Mold Package, that product can cope with high density assembling.
FEATURES
• Based on the electrostatic discharge immunity test (IEC61000-4-
2), the product assures the minimum endurance of 30 kV.
• Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It
is excellent in the frequency characteristic.
• With 4 elements mounted (common anode) in the SC-74A
package, that product can cope with high density assembling.
APPLICATIONS
• External interface circuit E.S.D. protection in the high-speed data
communication bus such as USB.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
15
0.950.95
1.9
2.9 ± 0.21.1 to 1.4
0.8
2
34
(SC-74A)
PIN CONNECTION
1.5 0.65
0 to 0.1
+0.1
0.15
+0.1
0.06
0.16
+0.1
0.06
0.32
MAXIMUM RATINGS (TA = 25°°°°C)
Power Dissipation P 200 mW (Total)
Surge Reverse Power P
Junction Temperature T
Storage Temperature T
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13910EJ2V0DS00 (2nd edition) Date Published February 2000 N CP(K) Printed in Japan
RSM j stg
2 W (t = 10 µs 1 pulse) Fig.5 150°C
C to +150°C
−55°
54
132
1 : K1 2 : A 3 : K2 4 : K3 5 : K4
©
Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4
1999
NNCD5.6MG to NNCD6.8MG
ELECTRICAL CHARACTERISTICS (TA = 25°°°°C) (A-K1, A-K2, A-K3, A-K4)
Note 2
Impedance
Z
Z
(Ω)
Reverse
Leakage
R
I
(µA)
Capacitance
t
C
(pF)
TEST
CONDITION
Type No.
Breakdown Voltage
VBR (V)
MIN. MAX. I
T
Dynamic
Note 1
(mA) MAX. IT (mA) MAX. VR (V) TYP.
NNCD5.6MG 5.3 6.3 5 80 5 5 2.5 26 30
R
V
NNCD6.2MG 5.7 6.7 5 50 5 2 3.0 20 30
= 0 V
f = 1 MHz
NNCD6.8MG 6.2 7.1 5 30 5 2 3.5 20
Note 1.
Tested with pulse (40 ms)
Z
is measured at IT give a small A.C. signal.
Z
2.
TYPICAL CHARACTERISTICS (TA = 25°°°°C)
Fig. 1 POWER DISSIPATION vs. Fig. 2 IT vs. VBR CHARACTERISTICS
AMBIENT TEMPERATURE
250
200
30 x 30 x 1.6 P.C.B. (Glass Epoxy)
150
100 m
NNCD5.6MG NNCD6.8MG
NNCD6.2MG
E.S.D Voltage
MIN.
30
(kV)
TEST
CONDITION
C = 150 pF R = 330
(IEC61000-4-2)
100
P - Power Dissiipation - mW
50
0
0 25 50 75 100 125 150
A - Ambient Temperature - °C
T
10 m
1 m
IT - On State Current - A
µ
100
10
µ
5678
BR - Breakdown Voltage - V
V
2
Data Sheet D13910EJ2V0DS00
40
30
20
NNCD5.6MG to NNCD6.8MG
Fig. 3 Ct-VR CHARACTERISTICS
f = 1 MHz
NNCD5.6MG
10
- Capacitance between the terminal - pF
t
C
Fig. 4 TRANSIENT THERMAL IMPEADANCE CHARACTERISTIC
5000
1000
100
10
- Transient Themal Impedance - °C/W
th
Z
5
V
R
- Reverse Voltage - V
NNCD∗∗MG
110100 m10 m1 m 100
NNCD6.2MG
NNCD6.8LG
101.00.1
625°C/W
P.C.B. (Glass Epoxy) (30 mm x 30 mm x 1.6 mm)
Fig. 5 SURGE REVERSE POWER RATINGS
50
10
- Suge Reverse Power - W
RSM
1
P
0.5 1
µ
10
µ
t - Time - s
NNCD∗∗MG
µ
t - Time - s
Data Sheet D13910EJ2V0DS00
TA = 25°C Non Repetitive
RSM
P
10 m1 m100
t
r
100 m
3
NNCD5.6MG to NNCD6.8MG
[MEMO]
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M7 98. 8
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