NEC NNCD5.6MG Technical data

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD5.6MG to NNCD6.8MG

LOW CAPACITANCE HIGH ESD TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(QUARTO TYPE: COMMON ANODE)

5-PIN MINI MOLD

This product series is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge) protection. Based on the IEC61000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, and capacitance is small with 20 pF TYP. This product series is the most suitable for the ESD protection in the high-speed data communication bus such as USB.

With four elements mounted in the 5-PIN Mini Mold Package, that product can cope with high density assembling.

FEATURES

Based on the electrostatic discharge immunity test (IEC61000-4- 2), the product assures the minimum endurance of 30 kV.

Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It is excellent in the frequency characteristic.

With 4 elements mounted (common anode) in the SC-74A package, that product can cope with high density assembling.

APPLICATIONS

External interface circuit E.S.D. protection in the high-speed data communication bus such as USB.

MAXIMUM RATINGS (TA = 25°C)

Power Dissipation

P

200 mW (Total)

Surge Reverse Power

PRSM

2 W (t = 10 μs 1 pulse) Fig.5

Junction Temperature

Tj

150°C

Storage Temperature

Tstg

55°C to +150°C

PACKAGE DIMENSIONS

(in millimeters)

 

 

2.8 ± 0.2

 

 

 

1.5

0.65 +0.150.1

 

 

 

+0.1 0.06

 

 

 

0.32

 

 

1

5

2.9 ± 0.2

 

2

 

1.9

0.95 0.95

 

 

 

3

4

1.1to 1.4

 

 

+0.1 0.06

0.8

 

0.16

 

 

0 to 0.1

 

 

 

(SC-74A)

 

PIN CONNECTION

5

 

4

 

 

 

 

 

 

 

1

: K1

Cathode

1

2

: A

Anode (common)

3

: K2

Cathode

2

4

:

K3

Cathode

3

5

:

K4

Cathode

4

1 2 3

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D13910EJ2V0DS00 (2nd edition)

Date Published February 2000 N CP(K)

©

 

1999

 

 

Printed in Japan

NEC NNCD5.6MG Technical data

NNCD5.6MG to NNCD6.8MG

ELECTRICAL CHARACTERISTICS (TA = 25°C) (A-K1, A-K2, A-K3, A-K4)

 

 

 

Note 1

DynamicNote 2

Reverse

Capacitance

 

E.S.D Voltage

 

Breakdown Voltage

Impedance

Leakage

 

 

 

VBR (V)

 

 

Ct (pF)

 

 

(kV)

Type No.

 

 

ZZ (Ω)

IR (μA)

 

 

 

 

 

 

 

 

 

 

 

 

MIN.

MAX.

IT (mA)

MAX.

IT (mA)

MAX.

VR (V)

TYP.

TEST

MIN.

TEST

 

CONDITION

CONDITION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NNCD5.6MG

5.3

6.3

5

80

5

5

2.5

26

 

30

 

C = 150 pF

 

 

 

 

 

 

 

 

 

VR = 0 V

 

 

NNCD6.2MG

5.7

6.7

5

50

5

2

3.0

20

30

R = 330 Ω

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

(IEC61000-4-2)

NNCD6.8MG

6.2

7.1

5

30

5

2

3.5

20

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note 1. Tested with pulse (40 ms)

2. ZZ is measured at IT give a small A.C. signal.

TYPICAL CHARACTERISTICS (TA = 25°C)

Fig. 1 POWER DISSIPATION vs.

Fig. 2 IT vs. VBR CHARACTERISTICS

AMBIENT TEMPERATURE

 

250

 

 

 

 

 

 

 

 

 

mW

200

 

 

 

 

 

 

 

 

 

 

 

 

 

30 x 30 x 1.6

 

 

 

100 m

NNCD6.2MG

-

 

 

 

 

P.C.B. (Glass Epoxy)

 

 

DissiipationPower-P

 

 

 

 

 

A-Current

 

150

 

 

 

 

 

 

NNCD5.6MG

NNCD6.8MG

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

10 m

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

State

 

 

 

 

 

 

 

 

 

 

1 m

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

T - On

 

 

 

0

25

50

75

100

125

150

 

 

 

 

 

 

 

 

 

 

I

100μ

 

 

 

 

TA - Ambient Temperature - °C

 

 

 

 

 

 

 

 

 

 

 

 

10μ

5

6

7

8

 

VBR - Breakdown Voltage - V

 

2

Data Sheet D13910EJ2V0DS00

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