NEC NNCD5.6MG Technical data

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD5.6MG to NNCD6.8MG

LOW CAPACITANCE HIGH ESD TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(QUARTO TYPE: COMMON ANODE)

5-PIN MINI MOLD

This product series is a low capacitance type diode developed for
E.S.D. (Electrostatic Discharge) protection. Based on the
IEC61000-4-2 test on electromagnetic interference (EMI), the diode
assures an endurance of no less than 30 kV, and capacitance is
small with 20 pF TYP. This product series is the most suitable for
the ESD protection in the high-speed data communication bus such
as USB.

With four elements mounted in the 5-PIN Mini Mold Package, that
product can cope with high density assembling.

FEATURES

• Based on the electrostatic discharge immunity test (IEC61000-4-

2), the product assures the minimum endurance of 30 kV.

• Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It

is excellent in the frequency characteristic.

• With 4 elements mounted (common anode) in the SC-74A

package, that product can cope with high density assembling.

APPLICATIONS

• External interface circuit E.S.D. protection in the high-speed data

communication bus such as USB.

PACKAGE DIMENSIONS

(in millimeters)

2.8 ± 0.2

15

0.950.95

1.9

2.9 ± 0.21.1 to 1.4

0.8

2

34

(SC-74A)

PIN CONNECTION

1.5 0.65

0 to 0.1

+0.1

−0.15

+0.1

−0.06

0.16

+0.1

−0.06

0.32

MAXIMUM RATINGS (TA = 25°°°°C)

Power Dissipation P 200 mW (Total)

Surge Reverse Power P

Junction Temperature T

Storage Temperature T

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13910EJ2V0DS00 (2nd edition)
Date Published February 2000 N CP(K)
Printed in Japan

RSM
j
stg

2 W (t = 10 µs 1 pulse) Fig.5
150°C

C to +150°C

−55°

54

132

1 : K1
2 : A
3 : K2
4 : K3
5 : K4

©

Cathode 1
Anode (common)
Cathode 2
Cathode 3
Cathode 4

1999

NNCD5.6MG to NNCD6.8MG

ELECTRICAL CHARACTERISTICS (TA = 25°°°°C) (A-K1, A-K2, A-K3, A-K4)

Note 2

Impedance

Z

Z

(Ω)

Reverse

Leakage

R

I

(µA)

Capacitance

t

C

(pF)

TEST

CONDITION

Type No.

Breakdown Voltage

VBR (V)

MIN. MAX. I

T

Dynamic

Note 1

(mA) MAX. IT (mA) MAX. VR (V) TYP.

NNCD5.6MG 5.3 6.3 5 80 5 5 2.5 26 30

R

V

NNCD6.2MG 5.7 6.7 5 50 5 2 3.0 20 30

= 0 V

f = 1 MHz

NNCD6.8MG 6.2 7.1 5 30 5 2 3.5 20

Note 1.

Tested with pulse (40 ms)

Z

is measured at IT give a small A.C. signal.

Z

2.

TYPICAL CHARACTERISTICS (TA = 25°°°°C)

Fig. 1 POWER DISSIPATION vs. Fig. 2 IT vs. VBR CHARACTERISTICS

AMBIENT TEMPERATURE

250

200

30 x 30 x 1.6
P.C.B. (Glass Epoxy)

150

100 m

NNCD5.6MG NNCD6.8MG

NNCD6.2MG

E.S.D Voltage

MIN.

30

(kV)

TEST

CONDITION

C = 150 pF
R = 330

Ω

(IEC61000-4-2)

100

P - Power Dissiipation - mW

50

0

0 25 50 75 100 125 150

A - Ambient Temperature - °C

T

10 m

1 m

IT - On State Current - A

µ

100

10

µ

5678

BR - Breakdown Voltage - V

V

2

Data Sheet D13910EJ2V0DS00