DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD5.6MG to NNCD6.8MG
LOW CAPACITANCE HIGH ESD TYPE
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
This product series is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge) protection. Based on the IEC61000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, and capacitance is small with 20 pF TYP. This product series is the most suitable for the ESD protection in the high-speed data communication bus such as USB.
With four elements mounted in the 5-PIN Mini Mold Package, that product can cope with high density assembling.
FEATURES
•Based on the electrostatic discharge immunity test (IEC61000-4- 2), the product assures the minimum endurance of 30 kV.
•Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It is excellent in the frequency characteristic.
•With 4 elements mounted (common anode) in the SC-74A package, that product can cope with high density assembling.
APPLICATIONS
•External interface circuit E.S.D. protection in the high-speed data communication bus such as USB.
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation |
P |
200 mW (Total) |
Surge Reverse Power |
PRSM |
2 W (t = 10 μs 1 pulse) Fig.5 |
Junction Temperature |
Tj |
150°C |
Storage Temperature |
Tstg |
−55°C to +150°C |
PACKAGE DIMENSIONS
(in millimeters)
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2.8 ± 0.2 |
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1.5 |
0.65 −+0.150.1 |
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+0.1 0.06− |
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0.32 |
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1 |
5 |
2.9 ± 0.2 |
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2 |
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1.9 |
0.95 0.95 |
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3 |
4 |
1.1to 1.4 |
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+0.1 −0.06 |
0.8 |
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0.16 |
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0 to 0.1 |
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(SC-74A) |
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PIN CONNECTION
5 |
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4 |
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1 |
: K1 |
Cathode |
1 |
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2 |
: A |
Anode (common) |
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3 |
: K2 |
Cathode |
2 |
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4 |
: |
K3 |
Cathode |
3 |
5 |
: |
K4 |
Cathode |
4 |
1 2 3
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13910EJ2V0DS00 (2nd edition)
Date Published February 2000 N CP(K) |
© |
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1999 |
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Printed in Japan
NNCD5.6MG to NNCD6.8MG
ELECTRICAL CHARACTERISTICS (TA = 25°C) (A-K1, A-K2, A-K3, A-K4)
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Note 1 |
DynamicNote 2 |
Reverse |
Capacitance |
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E.S.D Voltage |
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Breakdown Voltage |
Impedance |
Leakage |
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VBR (V) |
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Ct (pF) |
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(kV) |
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Type No. |
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ZZ (Ω) |
IR (μA) |
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MIN. |
MAX. |
IT (mA) |
MAX. |
IT (mA) |
MAX. |
VR (V) |
TYP. |
TEST |
MIN. |
TEST |
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CONDITION |
CONDITION |
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NNCD5.6MG |
5.3 |
6.3 |
5 |
80 |
5 |
5 |
2.5 |
26 |
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30 |
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C = 150 pF |
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VR = 0 V |
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NNCD6.2MG |
5.7 |
6.7 |
5 |
50 |
5 |
2 |
3.0 |
20 |
30 |
R = 330 Ω |
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f = 1 MHz |
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(IEC61000-4-2) |
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NNCD6.8MG |
6.2 |
7.1 |
5 |
30 |
5 |
2 |
3.5 |
20 |
30 |
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Note 1. Tested with pulse (40 ms)
2. ZZ is measured at IT give a small A.C. signal.
TYPICAL CHARACTERISTICS (TA = 25°C)
Fig. 1 POWER DISSIPATION vs. |
Fig. 2 IT vs. VBR CHARACTERISTICS |
AMBIENT TEMPERATURE
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250 |
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mW |
200 |
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30 x 30 x 1.6 |
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100 m |
NNCD6.2MG |
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- |
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P.C.B. (Glass Epoxy) |
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DissiipationPower-P |
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A-Current |
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150 |
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NNCD5.6MG |
NNCD6.8MG |
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100 |
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10 m |
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50 |
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State |
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1 m |
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0 |
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T - On |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
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I |
100μ |
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TA - Ambient Temperature - °C |
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10μ
5 |
6 |
7 |
8 |
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VBR - Breakdown Voltage - V |
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2 |
Data Sheet D13910EJ2V0DS00 |