NEC NNCD11A, NNCD12A, NNCD4.7A, NNCD4.3A, NNCD6.2A Datasheet
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.
Type NNCD2.0A to NNCD12A Series is into DO-34 Package
(Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
PACKAGE DIMENSIONS
(in millimeters)
0.4
φ
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation P 400 mW
Surge Reverse Power P
Junction Temperature Tj 175 °C
Storage Temperature Tstg –65 °C to +175 °C
RSM 100 W (tT = 10
µ
s 1 pulse) Fig. 7
Cathode
indication
2.0 MAX.
φ
25 MIN. 25 MIN.2.4 MAX.
Document No. D11769EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NNCD3.3A to NNCD12A
Breakdown Voltage
VBR (V)
Type Number
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V) TYP.
NNCD3.3A 3.16 3.53 5 120 5 20 1.0 220 30
NNCD3.6A 3.47 3.83 5 120 5 10 1.0 210 30
NNCD3.9A 3.77 4.14 5 120 5 5 1.0 200 30
NNCD4.3A 4.05 4.53 5 120 5 5 1.0 180 30
NNCD4.7A 4.47 4.91 5 120 5 5 1.0 170 30
NNCD5.1A 4.85 5.35 5 100 5 5 1.5 160 30
NNCD5.6A 5.29 5.88 5 70 5 5 2.5 140
NNCD6.2A 5.81 6.40 5 40 5 5 3.0 120
NNCD6.8A 6.32 6.97 5 30 5 2 3.5 110 30
NNCD7.5A 6.88 7.64 5 25 5 0.5 4.0 90 30
NNCD8.2A 7.56 8.41 5 20 5 0.5 5.0 90 30
NNCD9.1A 8.33 9.29 5 20 5 0.5 6.0 90 30
NNCD10A 9.19 10.3 5 20 5 0.2 7.0 80 30
NNCD11A 10.18 11.26 5 20 5 0.2 8.0 70 30
NNCD12A 11.13 12.30 5 25 5 0.2 9.0 70 30
Note 1
Dynamic
Impedance
Zz (Ω)
Reverse Leakage Capacitance E.S.D Voltage
Note 2
IR (µA) Ct (pF) (kV)
TEST
CONDITION CONDITION
VR = 0 V
f = 1 MHz
MIN.
30
30
TEST
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
NNCD3.3A to NNCD12A
POWER DISSIPATION vs.
Fig. 1 Fig. 2
AMBIENT TEMPERATURE
600
500
400
= 10 mm
300
200
100
P - Power Dissipation - mW
= 5 mm
P.C Board 3 mm
t = 0.035
0
0
20 40
TA - Ambient Temperature - °C
= 10 mm
= 5 mm
= 3 mm
φ
80 100 120 140 160 180 200
60
IT - VBR CHARACTERISTICS
100 m
NNCD3.3A
10 m
NNCD3.6A
NNCD3.9A
NNCD4.3A
1 m
7 mm
t = 0.035 mm
= 3 mm
NNCD7.5A
NNCD6.8A
P.C Board
NNCD8.2A
NNCD9.1A
THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
600
500
400
300
200
100
Rth - Thermal Resistance - °C/W
0
0
20 40 60 80 100
S - Size of P.C Board - mm
= 3 mm
IT - VBR CHARACTERISTICSFig. 3 Fig. 4
100 m
NNCD10A
10 m
1 m
NNCD11A
Junction to
anbient
S
= 10 mm
= 5 mm
2
NNCD12A
NNCD4.7A
µ
100
µ
10
- On State Current - A
T
I
1
µ
NNCD5.1A
100 n
NNCD5.6A
10 n
1 n
0
NNCD6.2A
12345
VBR - Breakdown Voltage - V
µ
100
µ
10
- On State Current - A
T
I
1
µ
100 n
10 n
678910 0 157139141281011
1 n
BR
- Breakdown Voltage - V
V
3
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