NEC NNCD10D, NNCD12D, NNCD3.9D, NNCD5.6D, NNCD4.3D Datasheet
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3D to NNCD12D
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini
Mold Package having allowable power dissipation of 200 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation P 200 mW
Surge Reverse Power P
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 °C to +150 °C
RSM 85 W (tT = 10
µ
s 1 pulse) Fig. 6
PACKAGE DIMENSIONS
(in millimeters)
2.5 ± 0.15
1.7 ± 0.1
0.3 ± 0.05
Cathode
Indication
0 ± 0.05
0.19
+0.05
–0.01
0.11
1.25 ± 0.1
0.9 ± 0.1
Document No. D11772EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NNCD3.3D to NNCD12D
Breakdown Voltage
VBR (V)
Type Number
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V) TYP.
NNCD3.3D 3.10 3.50 5 130 5 20 1.0 220 30
NNCD3.6D 3.40 3.80 5 130 5 10 1.0 210 30
NNCD3.9D 3.70 4.10 5 130 5 10 1.0 200 30
NNCD4.3D 4.00 4.49 5 130 5 10 1.0 180 30
NNCD4.7D 4.40 4.92 5 130 5 10 1.0 170 30
NNCD5.1D 4.82 5.39 5 130 5 5 1.5 160 30
NNCD5.6D 5.29 5.94 5 80 5 5 2.5 140
NNCD6.2D 5.84 6.55 5 50 5 5 3.0 120
NNCD6.8D 6.44 7.17 5 30 5 2 3.5 110 30
NNCD7.5D 7.03 7.87 5 30 5 2 4.0 90 30
NNCD8.2D 7.73 8.67 5 30 5 2 5.0 90 30
NNCD9.1D 8.53 9.58 5 30 5 2 6.0 90 30
NNCD10D 9.42 10.58 5 30 5 2 7.0 80 30
NNCD11D 10.40 11.60 5 30 5 2 8.0 70 30
NNCD12D 11.38 12.64 5 35 5 2 9.0 70 30
Note 1
Dynamic
Impedance
Zz (Ω)
Reverse Leakage Capacitance E.S.D Voltage
Note 2
IR (µA) Ct (pF) (kV)
TEST
CONDITION CONDITION
VR = 0 V
f = 1 MHz
MIN.
30
30
TEST
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
200
150
100
P - Power Dissipation - mW
50
0
0 255075
T
A
- Ambient Temperature - °C
NNCD3.3D to NNCD12D
30 × 30 × 1.6
P.C.B. (Glass Epoxy)
100 125 150
Fig. 2 IT - VBR CHARACTERISTICS Fig. 3 IT - VBR CHARACTERISTICS
NNCD7.5D
NNCD6.8D
100 m
NNCD3.3D
NNCD3.6D
10 m
NNCD3.9D
NNCD4.3D
1 m
NNCD4.7D
100
µ
10
µ
- On State Current - A
1
µ
T
I
NNCD5.1D
100 n
NNCD5.6D
10 n
1 n
NNCD6.2D
012345678910
BR
- Breakdown Voltage - V
V
NNCD8.2D
NNCD9.1D
100 m
NNCD11D
NNCD10D
10 m
1 m
100
µ
10
µ
- On State Current - A
1
µ
T
I
100 n
10 n
1 n
0789101112131415
V
BR
- Breakdown Voltage - V
NNCD12D
3
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