NEC NNCD3.3B, NNCD4.7B, NNCD5.1B, NNCD7.5B, NNCD8.2B Datasheet
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with
DHD (Double Heatsink Diode) construction having allowable
power dissipation of 500 mW.
PACKAGE DIMENSIONS
(in millimeters)
0.5
φ
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation P 500 mW
Surge Reverse Power P
Junction Temperature Tj 175 °C
Storage Temperature Tstg –65 °C to +175 °C
RSM 100 W (tT = 10
µ
s 1 pulse) Fig. 7
Cathode
indication
φ
2.0 MAX.
25 MIN. 25 MIN.4.2 MAX.
Document No. D11770EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NNCD3.3B to NNCD12B
Breakdown Voltage
VBR (V)
Type Number
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V) TYP.
NNCD3.3B 3.16 3.53 20 70 20 20 1.0 240 30
NNCD3.6B 3.47 3.83 20 60 20 10 1.0 230 30
NNCD3.9B 3.77 4.14 20 50 20 5 1.0 220 30
NNCD4.3B 4.05 4.53 20 40 20 5 1.0 210 30
NNCD4.7B 4.47 4.91 20 25 20 5 1.0 190 30
NNCD5.1B 4.85 5.35 20 20 20 5 1.5 160 30
NNCD5.6B 5.29 5.88 20 13 20 5 2.5 140
NNCD6.2B 5.81 6.40 20 10 20 5 3.0 120
NNCD6.8B 6.32 6.97 20 8 20 2 3.5 110 30
NNCD7.5B 6.88 7.64 20 8 20 0.5 4.0 90 30
NNCD8.2B 7.56 8.41 20 8 20 0.5 5.0 90 30
NNCD9.1B 8.33 9.29 20 8 20 0.5 6.0 90 30
NNCD10B 9.19 10.3 20 8 20 0.2 7.0 80 30
NNCD11B 10.18 11.26 10 10 10 0.2 8.0 70 30
NNCD12B 11.13 12.30 10 10 10 0.2 9.0 70 30
Note 1
Dynamic
Impedance
Zz (Ω)
Reverse Leakage Capacitance E.S.D Voltage
Note 2
IR (µA) Ct (pF) (kV)
TEST
CONDITION CONDITION
VR = 0 V
f = 1 MHz
MIN.
30
30
TEST
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
10 mm
= 5 mm
= 10 mm
0 40 80 120 160 20020 60 100 140 180
600
500
400
300
200
100
0
P.C Board 3 mm
t = 0.035 mm
φ
P.C Board
7 mm
t = 0.035 mm
P - Power Dissipation - mW
TA - Ambient Temperature - °C
= 10 mm
= 5 mm
0 20406080100
600
500
400
300
200
100
0
S - Size of P.C Board - mm
2
Junction to
anbient
S
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
R
th
- Thermal Resistance - °C/W
NNCD3.3B to NNCD12B
Fig. 3 IT - VBR CHARACTERISTICS Fig. 4 IT - VBR CHARACTERISTICS
NNCD5.1B
100 m
NNCD3.3B
NNCD3.6B
10 m
NNCD3.9B
NNCD4.3B
NNCD4.7B
1 m
100
µ
10
µ
IT - On State Current - A
1
µ
100 n
10 n
1 n
0246813579
V
BR - Breakdown Voltage - V
NNCD5.6B
TA = 25 °C
TYP.
NNCD6.2B
NNCD6.8B
NNCD7.5B
NNCD8.2B
NNCD9.1B
100 m
10 m
1 m
100
µ
10
µ
IT - On State Current - A
1
µ
100 n
10 n
1 n
0 8 10 12 147 9 11 13 15
TA = 25 °C
TYP.
NNCD11B
NNCD10B
BR - Breakdown Voltage - V
V
NNCD12B
3
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