NEC nesg3033m14 Datasets

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3033M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ V

• Maximum stable power gain: MSG = 20.5 dB TYP. @ V

• SiGe HBT technology (UHS3) adopted: f

• This product is improvement of ESD of NESG3032M14.

• 4-pin lead-less minimold (M14, 1208 PKG)

ORDERING INFORMATION

Part Number Order Number Package Quantity Supplying Form

CE = 2 V, IC = 6 mA, f = 2.0 GHz

CE = 2 V, IC = 15 mA, f = 2.0 GHz

max = 110 GHz

NESG3033M14 NESG3033M14-A 50 pcs

NESG3033M14-T3 NESG3033M14-T3-A

4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)

(Non reel)
10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO
Collector to Emitter Voltage VCEO 4.3 V
Base Current IB
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C

Note 1

Note 1

Note 2

5.0 V

12 mA

150 mW

Notes 1. V

2. Mounted on 1.08 cm

CBO and IB are limited by the permissible current of the protection element.

2

× 1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10640EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)

2006

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter Symbol MIN. TYP. MAX. Unit

NESG3033M14

Input Power Pin
Base Feedback Resister Rb

− −

− −

0 dBm

100 kΩ

Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the

ESD protection element is turned on when recommended range of motion in the above table is exceeded.

However, there is no influence of reliability, including deterioration.

R

b

Bias
Choke

2

Data Sheet PU10640EJ01V0DS

NESG3033M14

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE

Note 1

VCE = 2 V, IC = 6 mA 220 300 380

− −

− −

RF Characteristics
Insertion Power Gain ⏐S21e⏐2VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5
Noise Figure NF

Associated Gain Ga

Reverse Transfer Capacitance Cre
Maximum Stable Power Gain MSG

Note 2

Note

3

Gain 1 dB Compression Output Power PO (1 dB)

3rd Order Intermodulation Distortion
Output Intercept Point

OIP

3

CE = 2 V, IC = 6 mA, f = 2.0 GHz,
S = ZSopt, ZL = ZLopt

Z
V

CE = 2 V, IC = 6 mA, f = 2.0 GHz,
S = ZSopt, ZL = ZLopt

Z
VCB = 2 V, IE = 0 mA, f = 1 MHz

−

−

−

VCE = 2 V, IC = 15 mA, f = 2.0 GHz 17.5 20.5

V

CE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, Z
V

CE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, Z

S = ZSopt, ZL = ZLopt

S = ZSopt, ZL = ZLopt

−

−

0.60 0.85 dB

17.5

0.15 0.25 pF

12.5

24.0

V

µ

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded
S

3. MSG =

21

S

12

hFE CLASSIFICATION

Rank FB

100 nA
100 nA

−

−

−

−

−

−

dB

dB

dB

dBm

dBm

Marking zL

hFE Value 220 to 380

Data Sheet PU10640EJ01V0DS

3

PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)

1.0±0.05

+0.07

0.8

–0.05

–0.05

+0.07

0.8

1.2

zL

NESG3033M14

0.15±0.05

43

0.5±0.05

12

–0.05

+0.1

0.11

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. NC (Connected with Pin 2)

4

Data Sheet PU10640EJ01V0DS

NESG3033M14

•

The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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M8E 02. 11-1

Data Sheet PU10640EJ01V0DS

5

NESG3033M14

For further information, please contact

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [email protected]
Hong Kong Head Office TEL: [phone] FAX: [phone]
Taipei Branch Office TEL: [phone] FAX: [phone]
Korea Branch Office TEL: [phone] FAX: [phone]

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TEL: [phone] FAX: [phone]

California Eastern Laboratories, Inc. http://www.cel.com/
TEL: [phone] FAX: [phone]

Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/

0604

(

4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: [phone]
Facsimile:

408) 988-0279

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Restricted Substance

per RoHS

Lead (Pb) < 1000 PPM

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Not Detected (*)

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Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
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PBDE < 1000 PPM Not Detected

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