NEC nesg3032m14 Datasets

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ V

• Maximum stable power gain: MSG = 20.5 dB TYP. @ V

• SiGe HBT technology (UHS3) adopted: f

• 4-pin lead-less minimold (M14, 1208 package)

ORDERING INFORMATION

Part Number Order Number Package Quantity Supplying Form

CE = 2 V, IC = 6 mA, f = 2.0 GHz

CE = 2 V, IC = 15 mA, f = 2.0 GHz

max = 110 GHz

NESG3032M14 NESG3032M14-A 50 pcs

NESG3032M14-T3 NESG3032M14-T3-A

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 12.0 V
Collector to Emitter Voltage VCEO 4.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PWB

4-pin lead-less minimold
(M14, 1208 package)
(Pb-Free)

Note

150 mW

(Non reel)
10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)

©

NEC Compound Semiconductor Devices, Ltd. 2005

NESG3032M14

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE

Note 1

VCE = 2 V, IC = 6 mA 220 300 380

− −

− −

RF Characteristics
Insertion Power Gain ⏐S21e⏐2VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5
Noise Figure NF

Associated Gain Ga

Reverse Transfer Capacitance Cre
Maximum Stable Power Gain MSG

Note 2

Note

3

Gain 1 dB Compression Output Power PO (1 dB)

3rd Order Intermodulation Distortion
Output Intercept Point

OIP

3

CE = 2 V, IC = 6 mA, f = 2.0 GHz,
S = ZSopt, ZL = ZLopt

Z
V

CE = 2 V, IC = 6 mA, f = 2.0 GHz,
S = ZSopt, ZL = ZLopt

Z
VCB = 2 V, IE = 0 mA, f = 1 MHz

−

−

−

VCE = 2 V, IC = 15 mA, f = 2.0 GHz 17.5 20.5

V

CE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, Z
V

CE = 3 V, IC (set) = 20 mA,

f = 2.0 GHz, Z

S = ZSopt, ZL = ZLopt

S = ZSopt, ZL = ZLopt

−

−

0.60 0.85 dB

17.5

0.15 0.25 pF

12.5

24.0

V

µ

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

21

3. MSG =

S
S

12

hFE CLASSIFICATION

Rank FB

100 nA
100 nA

−

−

−

−

−

−

dB

dB

dB

dBm

dBm

Marking zN

hFE Value 220 to 380

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/

2

Data Sheet PU10575EJ01V0DS

PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) (UNIT: mm)

1.0±0.05

+0.07

0.8

–0.05

–0.05

+0.07

0.8

1.2

0.5±0.05

zN

43

12

0.15±0.05

–0.05

+0.1

0.11

NESG3032M14

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. NC (Connected with Pin 2)

Data Sheet PU10575EJ01V0DS

3

NESG3032M14

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

•

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M8E 00. 4 - 0110

4

Data Sheet PU10575EJ01V0DS

NESG3032M14

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
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2003/11/EC Restriction on Penta and Octa BDE.

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This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Lead (Pb) < 1000 PPM

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Not Detected (*)

Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected

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