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NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., G
NF = 0.95 dB TYP., G
NF = 1.1 dB TYP., G
• Maximum stable power gain: MSG = 15.0 dB TYP. @ V
• SiGe HBT technology (UHS3) adopted: f
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
a = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
a = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
a = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
CE = 3 V, IC = 20 mA, f = 5.8 GHz
max = 110 GHz
NESG3031M14 NESG3031M14-A 4-pin lead-less minimold
NESG3031M14-T3 NESG3031M14-T3-A 10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
(M14, 1208 PKG)
(Pb-Free)
50 pcs (Non reel) • 8 mm w ide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face
the perforation side of the tape
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 12.0 V
Collector to Emitter Voltage VCEO 4.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Note
150 mW
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10415EJ04V0DS (4th edition)
Date Published December 2008 NS
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The mark <R> shows major revised points.
2003, 2008
Page 2
NESG3031M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE
Note 1
VCE = 2 V, IC = 6 mA 220 300 380
− −
− −
RF Characteristics
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.5 9.0
Noise Figure (1) NF
Noise Figure (2) NF
Noise Figure (3) NF
Associated Gain (1) Ga
Associated Gain (2) Ga
Associated Gain (3) Ga
Reverse Transfer Capacitance Cre
Maximum Stable Power Gain MSG
Note 2
Note
3
Gain 1 dB Compression Output Power PO (1 dB)
Output 3rd Order Intercept Point
OIP
3
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 6 mA, f = 5.2 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 6 mA, f = 5.8 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 6 mA, f = 2.4 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 6 mA, f = 5.2 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 6 mA, f = 5.8 GHz,
V
Z
S = ZSopt, ZL = ZLopt
VCB = 2 V, IE = 0 mA, f = 1 MHz
V
CE = 3 V, IC = 20 mA, f = 5.8 GHz 12.0 15.0
CE = 3 V, IC (set) = 20 mA,
V
f = 5.8 GHz, Z
CE = 3 V, IC (set) = 20 mA,
V
f = 5.8 GHz, Z
S = ZSopt, ZL = ZLopt
S = ZSopt, ZL = ZLopt
−
−
−
−
−
7.5 9.5
−
−
−
0.6
0.95
1.1 1.5 dB
16.0
10.0
0.15 0.25 pF
13.0
18.0
CE = 2 V, IC = 6 mA, f = 2.4 GHz,
μ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S
3. MSG =
21
S
12
hFE CLASSIFICATION
Rank FB
100 nA
100 nA
−
−
−
−
−
−
−
−
−
−
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Marking zJ
hFE Value 220 to 380
2
Data Sheet PU10415EJ04V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
250
200
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on glass epoxy PWB
(1.08 cm
2
× 1.0 mm (t))
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
NESG3031M14
f = 1 MHz
150
100
Total Power Dissipation Ptot (mW)
100
0.1
0.01
0.001
Collector Current IC (mA)
0.0001
50
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE = 1 V
10
1
0.2
0.1
Reverse Transfer Capacitance Cre (pF)
0246810
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
CE = 2 V
V
10
1
0.1
0.01
0.001
Collector Current IC (mA)
0.0001
0.00001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
CE = 3 V
V
10
1
0.1
0.01
0.001
Collector Current IC (mA)
0.0001
0.00001
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
0.70.5 0.60.4 0.8 0.9 1.0
Data Sheet PU10415EJ04V0DS
0.00001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
μ
200 A
30
20
10
Collector Current IC (mA)
0
Collector to Emitter Voltage VCE (V)
2135
μ
180 A
μ
160 A
μ
140 A
μ
120 A
μ
100 A
μ
80 A
μ
60 A
μ
40 A
μ
IB = 20 A
4
3
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NESG3031M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
1
100.1 100
Collector Current IC (mA)
V
V
CE
= 1 V
CE
= 3 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
CE
= 1 V
V
f = 2 GHz
25
(GHz)
T
20
1
100.1 100
Collector Current IC (mA)
V
CE
= 2 V
100
DC Current Gain h
10
1
100.1 100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
CE
= 2 V
V
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1 10 100
Remark The graphs indicate nominal characteristics.
Collector Current IC (mA)
15
10
5
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
CE
= 3 V
V
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
4
Data Sheet PU10415EJ04V0DS
Page 5
NESG3031M14
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
25
MSG
(dB)
2
|
21e
20
MAG
15
10
2
|S
21e
|
5
Insertion Power Gain |S
1 100
10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
MSG
MAG
MAG
2
|S
21e
|
(dB)
2
|
21e
25
20
15
10
5
MSG
VCE = 1 V
IC = 20 mA
VCE = 3 V
IC = 20 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
MSG
MAG
MAG
2
|S
21e
|
(dB)
2
|
21e
25
20
15
10
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
(dB)
2
|
21e
20
15
10
5
MSG
|S
21e
2
|
MSG
MAG
VCE = 2 V
I
C
= 20 mA
VCE = 1 V
f = 2.4 GHz
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
MSG
(dB)
20
2
|
21e
|S
15
21e
10
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
2
|
VCE = 2 V
f = 2.4 GHz
MAG
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
(dB)
20
2
|
21e
15
10
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
|S
MSG
21e
|
VCE = 3 V
f = 2.4 GHz
MAG
2
Data Sheet PU10415EJ04V0DS
5
Page 6
NESG3031M14
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
2
|
21e
MSG
15
MAG
10
|S
21e
5
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
2
|
21e
MSG
15
10
5
MAG
|S
21e
2
|
2
|
VCE = 1 V
f = 5.2 GHz
VCE = 3 V
f = 5.2 GHz
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
2
|
21e
MSG
15
10
MAG
2
|S
21e
|
5
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
2
|
21e
15
MSG
10
5
MAG
|S
21e
2
|
VCE = 2 V
f = 5.2 GHz
VCE = 1 V
f = 5.8 GHz
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
2
|
21e
MSG
15
MAG
10
|S
21e
5
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
2
|
VCE = 2 V
f = 5.8 GHz
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
(dB)
|
21e
15
2
10
5
0
–5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
MSG
MAG
|S
Collector Current IC (mA)
21e
2
|
VCE = 3 V
f = 5.8 GHz
6
Data Sheet PU10415EJ04V0DS
Page 7
NESG3031M14
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 2.4 GHz
I
C (set)
= 20 mA
15
P
(dBm)
out
10
5
Output Power P
0
–5
–20 –10–15 –5 0 5
Input Power P
out
I
C
in
(dBm)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
G
a
4
3
50
40
30
20
10
0
20
16
12
20
15
(mA)
C
(dBm)
out
10
5
Output Power P
Collector Current I
0
–5
–15 –5–10 0 5 10
5
4
(dB)
a
3
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 3 V, f = 5.8 GHz
I
C (set)
= 20 mA
P
out
I
C
Input Power Pin (dBm)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
G
a
50
40
30
20
10
0
15
12
9
(dB)
a
(mA)
C
Collector Current I
2
Noise Figure NF (dB)
1
0
1 10 100
NF
V
CE
= 2 V
f = 2.4 GHz
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
8
Associated Gain G
4
0
2
Noise Figure NF (dB)
1
0
1 10 100
NF
V
CE
f = 5.8 GHz
Collector Current IC (mA)
= 2 V
6
Associated Gain G
3
0
Data Sheet PU10415EJ04V0DS
7
Page 8
NESG3031M14
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
8
Data Sheet PU10415EJ04V0DS
Page 9
NESG3031M14
<R>
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)
(Top View)
1.0±0.05
+0.07
0.8
–0.05
–0.05
+0.07
0.8
1.2
0.5±0.05
zJ
43
12
0.1
0.15±0.05
–0.05
+0.1
0.11
(Bottom View)
0.6
0.2
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Data Sheet PU10415EJ04V0DS
9
Page 10
NESG3031M14
•
The information in this document is current as of December, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
•
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
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•
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customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
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"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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M8E 02. 11-1
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