NEC nesg2101m16 Datasets

<R>

NPN SILICON GERMANIUM RF TRANSISTOR

NESG2101M16

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)

6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

FEATURES

• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

P

O (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

NF = 0.6 dB TYP., G

• Maximum stable power gain: MSG = 17.0 dB TYP. @ V

• High breakdown voltage technology for SiGe Tr. adopted: V

• 6-pin lead-less minimold (M16, 1208 PKG)

ORDERING INFORMATION

Part Number Order Number Package Quantity Supplying Form

a = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz

CE = 3 V, IC = 50 mA, f = 2 GHz

CEO (absolute maximum ratings) = 5.0 V

NESG2101M16 NESG2101M16-A 6-pin lead-less minimold

(M16, 1208 PKG)

NESG2101M16-T3 NESG2101M16-T3-A 10 kpcs/reel

(Pb-Free)

50 pcs (Non reel)

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Total Power Dissipation Ptot Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Note

190 mW

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10395EJ03V0DS (3rd edition) Date Published September 2009 NS

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

The mark <R> shows major revised points.

2003, 2009

<R>

NESG2101M16

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA DC Current Gain hFE

Note 1

VCE = 2 V, IC = 15 mA 130 190 260

− −

RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5

CE = 2 V, IC = 10 mA, f = 2 GHz,

Noise Figure (1) NF

Noise Figure (2) NF

Associated Gain (1) Ga

Associated Gain (2) Ga

Reverse Transfer Capacitance Cre Maximum Stable Power Gain MSG

V Z

S = ZSopt, ZL = ZLopt CE = 2 V, IC = 7 mA, f = 1 GHz,

V Z

S = ZSopt, ZL = ZLopt CE = 2 V, IC = 10 mA, f = 2 GHz,

V Z

S = ZSopt, ZL = ZLopt CE = 2 V, IC = 7 mA, f = 1 GHz,

V Z

S = ZSopt, ZL = ZLopt

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

Note

V

CE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0

3

Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF),

f = 2 GHz, Z

S = ZSopt, ZL = ZLopt

Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz,

S = ZSopt, ZL = ZLopt

Z

−

11.0 13.0

−

0.9 1.2 dB

0.6

19.0

0.4 0.5 pF

21

15

μ

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MSG =

S21 S

12

hFE CLASSIFICATION

Rank FB/YFB

100 nA 100 nA

−

GHz

dB

dBm

Marking zH

hFE Value 130 to 260

2

Data Sheet PU10395EJ03V0DS

NESG2101M16

<R>

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

300

250

(mW)

tot

200

190

150

100

50

Total Power Dissipation P

0

25 50 75 100 125 150

Mounted on Glass Epoxy PCB (1.08 cm

Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

VCE = 1 V

10

2

× 1.0 mm (t) )

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

1.0

(pF)

re

0.8

0.6

0.4

0.2

Reverse Transfer Capacitance C

02468

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

100

VCE = 2 V

10

f = 1 MHz

10

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.0001

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

VCE = 3 V

10

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.70.5 0.60.4 0.8 0.9 1.0

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.0001

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

100

VCE = 4 V

10

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.70.5 0.60.4 0.8 0.9 1.0

0.0001

Base to Emitter Voltage VBE (V)

0.70.5 0.60.4 0.8 0.9 1.0

Remark The graphs indicate nominal characteristics.

Data Sheet PU10395EJ03V0DS

0.0001

0.70.5 0.60.4 0.8 0.9 1.0

Base to Emitter Voltage VBE (V)

3

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

100

90 80 70

(mA)

C

60 50 40 30 20

Collector Current I

10

01234

Collector to Emitter Voltage VCE (V)

μ

500 A

450 A

400 A

μ

350 A

μ

300 A

μ

250 A

200 A 150 A

100 A

IB = 50 A

5

NESG2101M16

μ μ

μ

6

DC CURRENT GAIN vs. COLLECTOR CURRENT

1 000

FE

100

DC Current Gain h

10

DC CURRENT GAIN vs. COLLECTOR CURRENT

1 000

FE

CE

V

10.1 10 100

Collector Current IC (mA)

CE

V

= 1 V

= 3 V

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

FE

100

DC Current Gain h

10

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

FE

V

CE

10.1 10 100

Collector Current IC (mA)

V

CE

= 2 V

= 4 V

100

DC Current Gain h

10

10.1 10 100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

4

Data Sheet PU10395EJ03V0DS

100

DC Current Gain h

10

10.1 10 100

Collector Current IC (mA)

NESG2101M16

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

30

VCE = 1 V, f = 2 GHz

25

(GHz)

T

20

15

10

5

Gain Bandwidth Product f

0

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

30

VCE = 3 V, f = 2 GHz

25

(GHz)

T

20

101 100

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

30

VCE = 2 V, f = 2 GHz

25

(GHz)

T

20

15

10

5

Gain Bandwidth Product f

0

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

30

VCE = 4 V, f = 2 GHz

25

(GHz)

T

20

101 100

15

10

5

Gain Bandwidth Product f

0

Collector Current IC (mA)

101 100

Remark The graphs indicate nominal characteristics.

15

10

5

Gain Bandwidth Product f

0

Collector Current IC (mA)

101 100

Data Sheet PU10395EJ03V0DS

5

NESG2101M16

INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY

35

(dB)

2

|

21e

30

25

20

15

MSG

|S

21e

MAG

2

|

10

5

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0.1

1 10 100

Frequency f (GHz)

INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY

40 35

|S

MSG

21e

|

MAG

2

(dB)

2

|

21e

30 25 20 15

VCE = 1 V, IC = 50 mA

VCE = 3 V, IC = 50 mA

INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY

40 35

MSG

MAG

(dB)

2

|

21e

30 25 20

2

|S

21e

15

|

10

5 0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0.1

1 10 100

Frequency f (GHz)

INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY

40 35

MSG

|S

21e

MAG

2

|

(dB)

2

|

21e

30 25 20 15

VCE = 2 V, I

C

= 50 mA

VCE = 4 V, IC = 40 mA

10

5 0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0.1

1 10 100

Frequency f (GHz)

Remark The graphs indicate nominal characteristics.

10

5 0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0.1

1 10 100

Frequency f (GHz)

6

Data Sheet PU10395EJ03V0DS

NESG2101M16

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 1 V, f = 1 GHz

25

(dB)

20

2

|

21e

15

10

|S

5

Insertion Power Gain |S

1 10 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 1 V,

f = 2 GHz

25

(dB)

20

2

|

21e

15

21e

INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT

30

VCE = 2 V, f = 1 GHz

MAGMSG

25

MSG

(dB)

20

2

|

21e

15

2

|

10

2

|S

21e

|

5

0

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

1 10 100

C

Collector Current I

(mA)

INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT

30

= 2 V,

CE

V f = 2 GHz

25

(dB)

20

2

MAGMSG

|

21e

MSG

15

MAG

10

5

Insertion Power Gain |S

1 10 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Collector Current I

|S

21e

C

(mA)

2

|

INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT

20

= 1 V,

CE

V f = 3 GHz

15

(dB)

2

|

21e

MSG

10

5

Insertion Power Gain |S

1 10 100

0

Maximum Stable Power Gain MSG (dB)

Maximum Available Power Gain MAG (dB)

Remark The graphs indicate nominal characteristics.

MAG

21e

|S

Collector Current I

2

|

C

(mA)

10

5

0

Maximum Stable Power Gain MSG (dB)

Maximum Available Power Gain MAG (dB)

Insertion Power Gain |S

1 10 100

|S

Collector Current I

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

= 2 V,

CE

V f = 3 GHz

(dB)

2

|

21e

15

MSG

10

5

0

Maximum Stable Power Gain MSG (dB)

Maximum Available Power Gain MAG (dB)

Insertion Power Gain |S

1 10 100

MAG

|S

Collector Current I

21e

2

|

C

2

|

C

(mA)

Data Sheet PU10395EJ03V0DS

7

NESG2101M16

INSERTION POWER GAIN, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V, f = 1 GHz

25

(dB)

2

|

21e

20

MSG

15

10

5

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0

1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V, f = 2 GHz

25

(dB)

20

2

|

21e

15

INSERTION POWER GAIN, MSG

vs. COLLECTOR CURRENT

30

VCE = 4 V, f = 1 GHz

25

(dB)

2

|

21e

20

MSG

15

2

|S

21e

|

10

2

|S

21e

|

5

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0

1 10 100

C

Collector Current I

(mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 4 V, f = 2 GHz

25

MAGMSG

(dB)

2

|

21e

20

15

MAGMSG

10

5

Insertion Power Gain |S

1 10 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Collector Current I

2

|S

21e

|

C

(mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

VCE = 3 V, f = 3 GHz

15

(dB)

2

|

21e

10

5

Insertion Power Gain |S

1 10 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Remark The graphs indicate nominal characteristics.

MAGMSG

|S

21e

Collector Current I

2

|

C

(mA)

10

5

|S

Insertion Power Gain |S

1 10 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Collector Current I

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

VCE = 4 V, f = 3 GHz

15

(dB)

2

|

21e

10

5

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

1 10 100

MAGMSG

|S

Collector Current I

21e

2

|

C

2

|

C

(mA)

8

Data Sheet PU10395EJ03V0DS

NESG2101M16

OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER

25

20

G

(dBm)

out

(dB)

P

15

P

10

P

out

I

C

5

Power Gain G

Output Power P

0

–5

–20 –5–10

–15

V

CE

= 3.6 V, f = 1 GHz

I

cq

= 10 mA

05

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN, I

η

C

120

100

80

60

40

20

0

10

,

COLLECTOR EFFICIENCY vs. INPUT POWER

15

120

100

80

60

40

20

0

25

V

CE

= 3.6 V, f = 3 GHz

I

cq

= 10 mA

20

15

(dBm)

out

(dB)

P

10

5

Power Gain G

Output Power P

0

–5

–15 0–5

–10

G

P

Input Power Pin (dBm)

P

out

I

C

η

510

Remark The graphs indicate nominal characteristics.

OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER

25

20

(%)

C

(mA)

η

C

15

(dBm)

out

(dB)

P

10

5

Output Power P

Collector Current I

Power Gain G

Collector Efficiency

0

–5

–15 0–5

OUTPUT POWER, POWER GAIN, I COLLECTOR EFFICIENCY vs. INPUT POWER

25

20

(%)

C

η

(mA)

C

Collector Efficiency

Collector Current I

15

(dBm)

out

(dB)

P

10

5

Power Gain G

Output Power P

0

–5

–10 50

G

P

out

–10

Input Power Pin (dBm)

V

CE

= 3.6 V, f = 5.2 GHz

I

cq

= 10 mA

G

P

–5

Input Power Pin (dBm)

P

out

V

CE

I

cq

= 10 mA

I

C

η

= 3.6 V, f = 2 GHz

510

C

,

I

C

η

10 15

15

20

120

100

(mA)

80

C

60

40

Collector Current I

20

0

120

100

(mA)

80

C

60

40

Collector Current I

20

0

(%)

C

η

Collector Efficiency

(%)

C

η

Collector Efficiency

Data Sheet PU10395EJ03V0DS

9

NESG2101M16

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

G

3

a

2

Noise Figure NF (dB)

1

NF

V

0

1 10 100

f = 1 GHz

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

3

G

a

CE

= 1 V,

25

20

(dB)

a

15

10

Associated Gain G

5

0

25

20

(dB)

a

15

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

G

3

a

2

Noise Figure NF (dB)

1

NF

V

0

1 10 100

f = 1 GHz

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

3

G

a

CE

= 2 V,

25

20

(dB)

a

15

10

Associated Gain G

5

0

25

20

(dB)

a

15

2

Noise Figure NF (dB)

1

NF

V

0

1 10 100

f = 2 GHz

CE

= 1 V,

10

5

0

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

3

G

a

2

Noise Figure NF (dB)

1

NF

V

0

1 10 100

f = 3 GHz

Collector Current IC (mA)

CE

= 1 V,

25

20

15

10

5

0

Remark The graphs indicate nominal characteristics.

2

Associated Gain G

Noise Figure NF (dB)

1

0

1 10 100

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

(dB)

a

3

2

Noise Figure NF (dB)

Associated Gain G

1

0

1 10 100

NF

Collector Current IC (mA)

G

a

NF

Collector Current IC (mA)

CE

= 2 V,

V f = 2 GHz

V

CE

= 2 V,

f = 3 GHz

10

Associated Gain G

5

0

25

20

(dB)

a

15

10

Associated Gain G

5

0

10

Data Sheet PU10395EJ03V0DS

NESG2101M16

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT

5

4

G

3

2

Noise Figure NF (dB)

1

0

1 10 100

a

NF

Collector Current IC (mA)

CE

V f = 1 GHz

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT

5

4

3

G

a

= 3 V,

25

20

(dB)

a

15

10

Associated Gain G

5

0

25

20

(dB)

a

15

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT

5

4

3

2

Noise Figure NF (dB)

1

0

G

a

NF

V

CE

f = 2 GHz

1 10 100

Collector Current IC (mA)

= 3 V,

25

20

(dB)

a

15

10

Associated Gain G

5

0

<R>

2

Noise Figure NF (dB)

1

0

1 10 100

Collector Current IC (mA)

NF

V

CE

f = 3 GHz

= 3 V,

10

Associated Gain G

5

0

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import

of the parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/

Data Sheet PU10395EJ03V0DS

11

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)

1.0±0.05

+0.07

0.8

–0.05

NESG2101M16

–0.05

+0.07

1.2

0.8

0.40.4

0.5±0.05

123

zH

654

0.15±0.05

–0.05

+0.1

0.125

PIN CONNECTIONS

1. Collector

2. Emitter

3. Emitter

4. Base

5. Emitter

6. Emitter

Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance

and heat sinking.

12

Data Sheet PU10395EJ03V0DS

NESG2101M16

•

The information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

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"Specific":

Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application.

(Note) (1)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries.

(2)

"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).

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