Page 1
<R>
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., G
NF = 1.3 dB TYP., G
• Maximum stable power gain: MSG = 21.5 dB TYP. @ V
• High breakdown voltage technology for SiGe Tr. adopted: V
• 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
a = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
a = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
CE = 3 V, IC = 20 mA, f = 2 GHz
CEO (absolute maximum ratings) = 5.0 V
NESG2031M16 NESG2031M16-A 6-pin lead-less minimold
(M16, 1208 PKG)
NESG2031M16-T3 NESG2031M16-T3-A 10 kpcs/reel
(Pb-Free)
50 pcs
(Non reel)
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Note
175 mW
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The mark <R> shows major revised points.
2003, 2009
Page 2
<R>
NESG2031M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE
Note 1
VCE = 2 V, IC = 5 mA 130 190 260
− −
− −
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 20 mA, f = 2 GHz 20 25
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 20 mA, f = 2 GHz 16.0 18.0
CE = 2 V, IC = 5 mA, f = 2 GHz,
Noise Figure (1) NF
Noise Figure (2) NF
Associated Gain (1) Ga
Associated Gain (2) Ga
Reverse Transfer Capacitance Cre
Maximum Stable Power Gain MSG
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 5 mA, f = 5.2 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 5 mA, f = 2 GHz,
V
Z
S = ZSopt, ZL = ZLopt
CE = 2 V, IC = 5 mA, f = 5.2 GHz,
V
Z
S = ZSopt, ZL = ZLopt
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
Note
V
CE = 3 V, IC = 20 mA, f = 2 GHz 19.0 21.5
3
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, Z
S = ZSopt, ZL = ZLopt
Output 3rd Order Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, Z
S = ZSopt, ZL = ZLopt
−
−
15.0 17.0
−
−
−
−
0.8 1.1 dB
1.3
10.0
0.15 0.25 pF
13
23
μ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S
12
hFE CLASSIFICATION
Rank FB/YFB
100 nA
100 nA
−
−
−
−
−
−
−
−
−
GHz
dB
dB
dB
dB
dB
dBm
dBm
Marking zF
hFE Value 130 to 260
2
Data Sheet PU10394EJ03V0DS
Page 3
NESG2031M16
<R>
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
(mW)
tot
200
175
150
100
50
Total Power Dissipation P
0
25 50 75 100 125 150
Mounted on Glass Epoxy PCB
(1.08 cm
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
(pF)
re
0.2
0.1
Reverse Transfer Capacitance C
02468
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
f = 1 MHz
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
0.70.5 0.60.4 0.8 0.9 1.0
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
(mA)
C
20
15
10
Collector Current I
5
01234
Collector to Emitter Voltage VCE (V)
μ
200 A
μ
180 A
μ
160 A
μ
140 A
μ
120 A
μ
100 A
μ
80 A
μ
60 A
μ
40 A
μ
IB = 20 A
5
6
Data Sheet PU10394EJ03V0DS
3
Page 4
NESG2031M16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
CE
V
10.1 10 100
Collector Current IC (mA)
CE
V
= 1 V
= 3 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
V
CE
10.1 10 100
Collector Current IC (mA)
= 2 V
100
DC Current Gain h
10
10.1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10394EJ03V0DS
Page 5
NESG2031M16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 1 V,
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V,
f = 2 GHz
25
(GHz)
T
20
15
10
101 100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 2 V,
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
15
10
101 100
Collector Current IC (mA)
MSG
|S
21e
MAG
2
|
VCE = 1 V,
IC = 10 mA
5
Gain Bandwidth Product f
0
101 100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
(dB)
2
|
21e
25
MSG
20
MAG
15
2
|S
21e
|
10
5
Insertion Power Gain |S
0.1
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
MAG
VCE = 2 V,
I
C
= 10 mA
MSG
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
(dB)
2
|
25
21e
20
15
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0.1
MSG
2
|S
21e
|
1 10 100
Frequency f (GHz)
MAG
MAG
VCE = 3 V,
I
C
= 10 mA
MSG
1001010.1
Data Sheet PU10394EJ03V0DS
5
Page 6
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V,
f = 1 GHz
25
(dB)
20
2
|
21e
|S
15
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V,
f = 3 GHz
25
(dB)
20
2
|
21e
15
10
5
|S
21e
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V,
MAGMSG
(dB)
2
|
2
|
21e
25
20
15
f = 2 GHz
MAGMSG
2
|S
21e
|
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
C
Collector Current I
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V,
f = 5 GHz
25
MAGMSG
2
|
(dB)
2
|
21e
20
15
10
MAGMSG
2
|S
21e
5
|
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
C
Collector Current I
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V,
f = 1 GHz
25
(dB)
20
2
|
21e
15
10
5
0
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Remark The graphs indicate nominal characteristics.
MSG
21e
|S
Collector Current I
2
|
C
(mA)
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V,
f = 2 GHz
25
(dB)
20
2
|
21e
15
10
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
|S
21e
C
2
|
C
(mA)
(mA)
MAGMSG
6
Data Sheet PU10394EJ03V0DS
Page 7
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V,
f = 3 GHz
25
(dB)
20
2
|
21e
15
|S
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V,
(dB)
2
|
21e
25
20
15
f = 1 GHz
MSG
|S
21e
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V,
f = 5 GHz
(dB)
2
|
21e
25
20
15
10
MAGMSG
2
|S
21e
|
MAGMSG
2
|
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
= 3 V,
CE
V
f = 2 GHz
25
(dB)
20
2
|
2
|
21e
15
MSG
2
|
21e
|S
MAG
10
5
0
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V,
f = 3 GHz
25
(dB)
20
2
|
21e
15
|S
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
21e
MAGMSG
2
|
10
5
Insertion Power Gain |S
1 10 100
0
Maximum Stable Power Gain MSG (dB)
Maximum Available Power Gain MAG (dB)
Collector Current I
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V,
f = 5 GHz
25
(dB)
20
2
|
21e
15
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
MAGMSG
|S
Collector Current I
21e
C
2
|
C
(mA)
(mA)
Data Sheet PU10394EJ03V0DS
7
Page 8
NESG2031M16
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 1 GHz,
I
cq
= 20 mA
15
(dBm)
out
10
5
Output Power P
0
–5
–30 –20 –15 –10–25 –5
P
out
I
C
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 3 GHz,
I
cq
= 20 mA
15
(dBm)
out
10
P
out
50
40
(mA)
C
30
20
Collector Current I
10
0
50
40
(mA)
C
30
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 2 GHz,
I
cq
= 20 mA
15
(dBm)
out
10
5
Output Power P
0
–5
–25 –15 –10 –5–20 0
P
out
I
C
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 5.2 GHz,
I
cq
= 20 mA
15
(dBm)
out
10
P
out
50
40
(mA)
C
30
20
10
Collector Current I
0
50
40
(mA)
C
30
I
5
Output Power P
0
–5
–20 –10 –5 0–15 5
C
20
10
0
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
5
Collector Current I
Output Power P
0
–5
–15 –5 0 5–10 10
I
C
Input Power Pin (dBm)
20
Collector Current I
10
0
8
Data Sheet PU10394EJ03V0DS
Page 9
NESG2031M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
G
3
a
2
Noise Figure NF (dB)
1
NF
0
1
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
G
a
V
CE
= 1 V,
f = 1 GHz
100
30
25
(dB)
a
20
15
10
Associated Gain G
5
30
25
(dB)
a
20
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
G
4
a
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
CE
V
f = 1 GHz
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
G
a
= 2 V,
30
25
(dB)
a
20
15
10
Associated Gain G
5
30
25
(dB)
a
20
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
CE
V
f = 2 GHz
= 1 V,
15
10
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
G
a
2
Noise Figure NF (dB)
1
0
Collector Current I
NF
C
(mA)
CE
= 1 V,
V
f = 5.2 GHz
Remark The graphs indicate nominal characteristics.
25
20
15
10
5
0
100101
2
Associated Gain G
Noise Figure NF (dB)
1
0
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
(dB)
a
3
2
Associated Gain G
Noise Figure NF (dB)
1
0
NF
Collector Current I
G
a
NF
Collector Current I
V
f = 2 GHz
C
(mA)
V
f = 5.2 GHz
C
(mA)
CE
= 2 V,
CE
= 2 V,
15
Associated Gain G
10
5
100101
25
20
(dB)
a
15
10
Associated Gain G
5
0
100101
Data Sheet PU10394EJ03V0DS
9
Page 10
NESG2031M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
G
a
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current IC (mA)
NF
V
f = 1 GHz
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
G
a
2
CE
= 3 V,
30
25
(dB)
a
20
15
10
Associated Gain G
5
25
20
(dB)
a
15
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
G
a
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
V
f = 2 GHz
CE
= 3 V,
30
25
(dB)
a
20
15
Associated Gain G
10
5
<R>
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
V
f = 5.2 GHz
C
(mA)
CE
= 3 V,
Associated Gain G
5
0
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
10
Data Sheet PU10394EJ03V0DS
Page 11
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.0±0.05
+0.07
0.8
–0.05
NESG2031M16
+0.07
1.2
–0.05
0.8
0.40.4
0.5±0.05
123
zF
654
0.15±0.05
–0.05
+0.1
0.125
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
Data Sheet PU10394EJ03V0DS
11
Page 12
NESG2031M16
•
The information in this document is current as of September, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard":
"Special":
"Specific":
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
Loading...