NEC ne851m13 Datasets

NE851M13NEC's NPN SILICON TRANSISTOR

FEATURES

• NEW MINIATURE M13 PACKAGE:

– Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

• IDEAL FOR

≤ 3 GHz OSCILLATORS

• LOW PHASE NOISE

• LOW PUSHING FACTOR

DESCRIPTION

NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.

OUTLINE DIMENSIONS

PACKAGE OUTLINE M13

0.7±0.05

2

1

0.5

E7

0.1

+0.1 ñ0.05

+0.1

0.2

3

0.1

+0.1

0.125

+0.1

1.0

ñ0.05

0.7

ñ0.05

+0.1

0.15

0.35

ñ0.05

+0.1

0.15

0.5±0.05

(Units in mm)

(Bottom View)

0.3

ñ0.05

0.2 0.2

ñ0.05

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE851M13

EIAJ1 REGISTERED NUMBER 2SC5801

PACKAGE OUTLINE M13

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

fT Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz GHz 3.0 4.5 –

fT Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz GHz 5.0 6.5

2

|S21E|

2

|S21E|

NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz dB – 1.9 2.5

CRE Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz pF – 0.6 0.8

ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 nA – – 600

IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA – – 600

hFE DC Current Gain2 at VCE = 1 V, IC = 5 mA 100 120 145

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz dB 3.0 4.0 –

Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz dB 4.5 5.5 –

California Eastern Laboratories

NE851M13

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 9

VCEO Collector to Emitter Voltage V 5.5

VEBO Emitter to Base Voltage V 1.5

C Collector Current mA 100

I

2

PT

T

Total Power Dissipation mW 140

J Junction Temperature °C 150

TSTG Storage Temperature °C -65 to +150

Notes:

1. Operation in excess of any one of these parameters may result in permanent damage.

2. With device mounted on 1.08 cm

2

X 1.0 mm glass epoxy board.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

160

140

(mW)

tot

120

Mounted on Glass Epoxy PCB (1.08 cm2 • 1.0mm(t) )

ORDERING INFORMATION

PART NUMBER QUANTITY

NE851M13-T3-A 10 k pcs./reel

REVERSE TRANSFR CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

1.0

(pF)

re

0.8

f = 1 MHz

100

80

60

40

20

Total Power Dissipation, P

0

25 50 75 100 125 150

Ambient Temperature, TA (°C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

VCE = 2 V

80

(mA)

C

60

40

Collector Current, I

20

0.6

0.4

0.2

Reverse Transfer Capacitance, C

0

123456789

Collector to Base Voltage, VCB (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

60

400 A

50

(mA)

C

40

30

20

Collector Current, I

10

µ

360 A

µ

320 A

µ

280 A

240 A

µ

200 A

µ

160 A

µ

120 A

80 A

µ

0

0.2 0.4 0.6 0.8 1.0

Base to Emitter Voltage, VBE (V)

01234

Collector to Emitter Voltage, VCE (V)

µ

IB = 40 A

56

7

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE851M13

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

10

VCE = 1 V f = 2 GHz

8

(GHz)

T

6

4

2

Gain Bandwidth Product, f

0

Collector Current, IC (mA)

INSERTION POWER GAIN vs.

FREQUENCY

35

30

(dB)

2

|

21e

25

101 100

VCE = 1 V I

C

= 5 mA

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

10

CE = 2 V

V

f = 2 GHz

8

(GHz)

T

6

4

2

Gain Bandwidth Product, f

0

1 10 100

Collector Current, IC (mA)

INSERTION POWER GAIN vs.

FREQUENCY

35

30

(dB)

2

|

25

21e

VCE = 2 V I

C

= 5 mA

20

15

10

5

Insertion Power Gain, |S

0

0.1 1

Frequency, f (GHz)

INSERTION POWER GAIN vs.

FREQUENCY

35

30

(dB)

2

|

21e

25

20

15

10

5

Insertion Power Gain, |S

0

0.1 1 10

Frequency, f (GHz)

VCE = 1 V I

C = 15 mA

20

15

10

5

Insertion Power Gain, |S

0

10

0.1 1 10

Frequency, f (GHz)

INSERTION POWER GAIN vs.

FREQUENCY

35

30

(dB)

2

|

25

21e

20

15

10

5

Insertion Power Gain, |S

0

0.1 1 10

VCE = 2 V I

C

= 15 mA

Frequency, f (GHz)

NE851M13

TYPICAL PERFORMANCE CURVES (TA = 25°C)

INSERTION POWER GAIN, MAG,

MSG vs. COLLECTOR CURRENT

20

(dB)

2

|

15

21e

10

5

Maximum Stable Gain, MSG(dB)

Insertion Power Gain, |S

Maximum Available Gain, MAG(dB)

0

1 10 100

MSG

MAG

Collector Current, IC (mA)

INSERTION POWER GAIN and MAG

vs. COLLECTOR CURRENT

15

VCE = 1 V f = 2 GHz

(dB)

2

|

10

21e

|S

MAG

21e

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

(dB)

2

|

15

21e

2

|

VCE = 1 V f = 1 GHz

10

5

Maximum Stable Gain, MSG(dB)

Insertion Power Gain, |S

Maximum Available Gain, MAG(dB)

0

1 10 100

MSG

MAG

|S21e|

2

V

CE

= 2 V

f = 1 GHz

Collector Current, IC (mA)

INSERTION POWER GAIN and MAG

vs. COLLECTOR CURRENT

15

CE

= 2 V

V f = 2 GHz

(dB)

2

|

21e

10

MAG

5

0

Insertion Power Gain, |S

Maximum Available Gain, MAG(dB)

-5 1 10 100

Collector Current, IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

10

VCE = 1 V f = 4 GHz

(dB)

2

|

21e

Insertion Power Gain, |S

5

0

-5

Maximum Stable Gain, MSG(dB)

Maximum Available Gain, MAG(dB)

-10 1 10 100

Collector Current, IC (mA)

|S

|S21e|

21e

|

2

MSG

2

MAG

5

0

Insertion Power Gain, |S

Maximum Available Gain, MAG(dB)

-5 1 10 100

Collector Current, IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

10

VCE = 2 V f = 4 GHz

(dB)

2

|

21e

Insertion Power Gain, |S

5

0

-5

Maximum Stable Gain, MSG(dB)

Maximum Available Gain, MAG(dB)

-10 1 10 100

Collector Current, IC (mA)

2

|S

21e

|

MSG

2

|S

21e

|

MAG

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE851M13

NOISE FIGURE and ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

VCE = 1 V f = 1 GHz

5

4

3

2

G

a

Noise Figure, NF (dB)

1

0

1 10 100

NF

Collector Current, IC (mA)

NOISE FIGURE and ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

VCE = 1 V f = 2 GHz

5

4

G

3

a

18

15

(dB)

a

12

9

6

Associated Gain, G

3

0

18

15

(dB)

a

12

9

NOISE FIGURE and ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

VCE = 2 V

f = 1 GHz

5

4

3

2

G

a

Noise Figure, NF (dB)

1

0

1 10 100

NF

Collector Current, IC (mA)

NOISE FIGURE and ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

VCE = 2 V

f = 2 GHz

5

4

G

3

a

19

15

(dB)

a

12

9

6

Associated Gain, G

3

0

18

15

(dB)

a

12

9

2

Noise Figure, NF (dB)

1

0

1 10 100

NF

Collector Current, IC (mA)

OUTPUT POWER AND

COLLECTOR CURRENT vs.

INPUT POWER

25

VCE = 2 V, f = 1 GHz I

cq

= 5 mA (RF OFF)

20

15

(dBm)

10

OUT

5

0

-5

Output Power, P

-10

-15

-20 -15 -10 -5 0 5 10

out

P

I

C

Input Power, PIN (dBm)

6

Associated Gain, G

3

0

80

70

60

(mA)

C

50

40

30

20

Collector Current, I

10

0

2

NF

Noise Figure, NF (dB)

1

0

1 10 100

Collector Current, IC (mA)

OUTPUT POWER AND

COLLECTOR CURRENT vs.

INPUT POWER

25

VCE = 2 V, f = 2 GHz I

cq

= 5 mA (RF OFF)

20

15

(dBm)

10

OUT

5

0

-5

Output Power, P

-10

-15

-20 -15 -10 -5 0 5 10

out

P

I

C

Input Power, PIN (dBm)

6

Associated Gain, G

3

0

80

70

60

(mA)

C

50

40

30

20

Collector Current, I

10

0

NE851M13

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

-j10

j50

j25

11

S

j10

10

0

25

S22

-j25

0.100 to 4.000 GHz by 0.050

100

50

-j50

j100

-j100

+135˚

S21

0

+180˚

-135˚

+90˚

S12

-90˚

0.100 to 4.000GHz by 0.050

+45˚

-45˚

18642

0˚

NE851M13 VC = 1 V, IC = 5 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.831 -46.49 13.764 152.54 0.036 66.4 0.901 -23.1 0.068 25.83

0.200 0.789 -81.92 11.335 132.55 0.058 50.3 0.742 -38.6 0.134 22.93

0.300 0.765 -106.07 9.135 118.99 0.069 40.9 0.618 -47.8 0.192 21.23

0.400 0.750 -122.16 7.476 109.52 0.075 35.5 0.533 -53.5 0.250 20.01

0.500 0.706 -133.99 6.157 103.05 0.077 33.0 0.460 -53.3 0.394 19.04

0.600 0.699 -142.06 5.251 97.76 0.078 31.6 0.414 -55.7 0.478 18.26

0.700 0.697 -148.74 4.576 93.13 0.080 31.0 0.382 -58.2 0.551 17.59

0.800 0.696 -153.88 4.062 89.34 0.081 31.4 0.363 -59.5 0.619 17.02

0.900 0.697 -158.33 3.646 85.83 0.082 32.0 0.350 -61.5 0.682 16.51

1.000 0.697 -161.97 3.308 82.71 0.082 33.1 0.339 -63.3 0.751 16.05

1.500 0.704 -174.56 2.262 69.58 0.087 41.9 0.328 -74.5 1.012 13.47

2.000 0.712 176.89 1.721 59.12 0.098 53.1 0.342 -86.9 1.152 10.09

2.500 0.724 169.88 1.391 50.09 0.118 62.5 0.376 -98.8 1.122 8.58

3.000 0.732 163.33 1.166 42.52 0.147 68.6 0.415 -109.4 1.042 7.75

3.500 0.743 156.42 1.002 36.21 0.182 71.3 0.458 -117.8 0.939 7.41

4.000 0.746 150.06 0.879 31.47 0.222 71.8 0.498 -125.3 0.877 5.98

1

Note:

1. Gain Calculations:

MAG =

|S

21

|

(

12

|

|S

K ±

2

K - 1

MAG = Maximum Available Gain MSG = Maximum Stable Gain

).

When K ≤ 1, MAG is undefined and MSG values are used.

MSG =

21

|

|S

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

NE851M13

-j10

j50

j25

S11

j10

10

0

25

S22

-j25

0.100 to 4.000GHz by 0.050

100

50

-j50

j100

-j100

+135˚

0

+180˚

-135˚

+90˚

S21

0.100 to 4.000GHz by 0.050

S12

-90˚

+45˚

18642

-45˚

NE851M13 VC = 2 V, IC = 10 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.718 -62.67 22.758 144.89 0.029 61.8 0.823 -32.5 0.135 28.99

0.200 0.689 -102.19 16.867 123.83 0.042 47.7 0.615 -50.6 0.239 26.05

0.300 0.680 -124.30 12.737 111.69 0.048 42.0 0.486 -60.3 0.334 24.22

0.400 0.677 -137.54 10.068 103.82 0.052 40.1 0.408 -66.1 0.423 22.85

0.500 0.648 -147.55 8.180 98.85 0.055 40.8 0.335 -65.2 0.582 21.74

0.600 0.645 -153.87 6.913 94.59 0.057 41.9 0.296 -67.9 0.679 20.81

0.700 0.647 -158.99 5.980 90.88 0.060 43.5 0.270 -70.9 0.755 19.98

0.800 0.648 -162.97 5.282 87.80 0.063 45.4 0.253 -72.1 0.819 19.23

0.900 0.651 -166.43 4.725 84.93 0.066 47.2 0.243 -74.0 0.871 18.55

1.000 0.652 -169.32 4.275 82.38 0.069 49.2 0.234 -75.8 0.922 17.92

1.500 0.661 -179.34 2.907 71.36 0.087 57.6 0.226 -86.3 1.059 13.75

2.000 0.669 173.47 2.212 62.32 0.109 63.9 0.241 -97.3 1.097 11.18

2.500 0.679 167.37 1.795 54.17 0.135 67.6 0.274 -107.0 1.061 9.73

3.000 0.687 161.58 1.515 47.00 0.164 69.6 0.311 -115.5 1.013 8.96

3.500 0.696 155.30 1.313 40.58 0.197 70.1 0.353 -121.7 0.947 8.24

4.000 0.699 149.56 1.161 35.18 0.232 69.6 0.393 -127.3 0.901 6.99

Note:

1. Gain Calculations:

MAG =

|S

21

|

(

12

|

|S

K ±

2

K - 1

MAG = Maximum Available Gain MSG = Maximum Stable Gain

).

When K ≤ 1, MAG is undefined and MSG values are used.

MSG =

21

|

|S

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

2

11

| - |S22|

|

2

∆ = S

,

11 S22

0˚

- S21 S

1

12

NE851M13

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

-j10

j50

j25

j10

0

S11

10

25

-j25

0.100 to 4.000GHz by 0.050

50

100

S22

-j50

j100

-j100

+135˚

0

+180˚

-135˚

+90˚

S21

0.100 to 4.000GHz by 0.050

S12

-90˚

+45˚

-45˚

18642

0˚

NE851M13 VC = 3 V, IC = 20 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.592 -86.11 33.025 135.40 0.022 57.5 0.710 -44.7 0.243 31.86

0.200 0.610 -124.37 21.656 115.31 0.031 48.3 0.483 -65.2 0.402 28.50

0.300 0.620 -141.71 15.554 105.23 0.036 47.6 0.370 -75.9 0.532 26.41

0.400 0.626 -151.34 12.032 98.91 0.040 49.1 0.309 -82.6 0.635 24.80

0.500 0.610 -159.31 9.710 95.19 0.044 52.1 0.241 -83.3 0.781 23.47

0.600 0.610 -163.96 8.162 91.77 0.048 54.4 0.212 -87.6 0.862 22.32

0.700 0.613 -167.68 7.032 88.75 0.052 56.5 0.194 -92.2 0.917 21.29

0.800 0.615 -170.58 6.194 86.21 0.057 58.6 0.181 -94.3 0.956 20.36

0.900 0.620 -173.15 5.529 83.82 0.062 60.3 0.173 -96.9 0.983 19.53

1.000 0.621 -175.39 4.996 81.67 0.067 61.8 0.167 -99.4 1.010 18.15

1.500 0.632 176.71 3.387 72.14 0.092 66.6 0.166 -109.9 1.059 14.16

2.000 0.639 170.54 2.578 64.13 0.119 69.0 0.183 -118.5 1.064 11.79

2.500 0.648 165.15 2.096 56.72 0.148 69.7 0.214 -124.5 1.035 10.35

3.000 0.654 159.90 1.775 50.03 0.178 69.5 0.248 -129.5 1.005 9.56

3.500 0.662 154.05 1.546 43.87 0.210 68.7 0.285 -132.5 0.963 8.68

4.000 0.664 148.76 1.376 38.44 0.243 67.5 0.321 -135.5 0.929 7.54

Note:

1. Gain Calculations:

MAG =

|S

21|

(K ±

12|

|S

2

K - 1 ).

MAG = Maximum Available Gain MSG = Maximum Stable Gain

When K ≤ 1, MAG is undefined and MSG values are used.

MSG =

21|

|S

, K =

|S

12|

2

1 + | ∆ | - |S

2 |S12 S21|

2

11| - |S22|

2

∆ = S

,

11 S22 - S21 S12

1

NONLINEAR MODEL

.

NE851M13

SCHEMATIC

LB

0.25 nH

Base

L

BPKG

0.05 nH

BJT NONLINEAR MODEL PARAMETERS

Parameters Q1 Parameters Q1

IS 137e-18 MJC 0.14

BF 166 XCJC 0.5

NF 0.9871 CJS 0

VAF 20.4 VJS 0.75

IKF 50 MJS 0

ISE 80.4e-15 FC 0.55

NE 2.4 TF 15e-12

BR 28.7 XTF 0.1

NR 0.9889 VTF 2

VAR 2.7 ITF 0.03

IKR 0.021 PTF 0

ISC 532e-18 TR 1.0e-9

NC 1.28 EG 1.11

RE 0.45 XTB 0

RB 4 XTI 3

RBM 1 KF 170e-15

IRB 0 AF 1.65

RC 1.7

CJE 2.4e-12

VJE 0.87

MJE 0.34

CJC 0.65e-12

VJC 0.52

CCBPKG

0.05 pF

CCB

0.01 pF

Emitter

(1)

LCPKG

0.05 nH

Collector

LE

0.45 nH

LEPKG

0.05 nH

CCE

0.25 pF

CCEPKG

0.05 pF

Q1

ADDITIONAL PARAMETERS

Parameters NE851M13

CCB 0.01 pF

CCE 0.25 pF

LB 0.25 nH

LE 0.45 nH

CCBPKG 0.05 pF

CCEPKG 0.05 pF

LBX 0.05 nH

LCX 0.05 nH

LEX 0.05 nH

MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz

Bias: VCE = 1 V to 4 V, IC = 1 mA to 40 mA Date: 09/2001

(1) Gummel-Poon Model

Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.

A Business Partner of NEC Compound Semiconductor Devices, Ltd

01/27/2003

4590 Patrick Henry Drive

(

Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile:

408) 988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Lead (Pb) < 1000 PPM

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Not Detected (*)

Mercury < 1000 PPM Not Detected

Cadmium < 100 PPM Not Detected

Hexavalent Chromium < 1000 PPM Not Detected

PBB < 1000 PPM Not Detected

PBDE < 1000 PPM Not Detected

If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.

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