NEC ne685m13 Datasets

NEC's NPN SILICON TRANSISTOR

1. Emitter

2. Base

3. Collector

PIN CONNECTIONS

0.125

+0.1

ñ0.05

0.5±0.05

0.1

0.1

0.2

+0.1

ñ0.05

0.35

0.7

0.35

0.15

+0.1

ñ0.05

0.15

+0.1

ñ0.05

1.0

+0.1

ñ0.05

0.5

+0.1
ñ0.05

0.7±0.05

1

2

3

Y2

0.3

0.2 0.2

(Bottom View)

NE685M13

FEATURES

• NEW MINIATURE M13 PACKAGE:

– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance

• HIGH GAIN BANDWIDTH PRODUCT:

f

T = 12 GHz

• LOW NOISE FIGURE:

NF = 1.5 dB at 2 GHz

DESCRIPTION

NEC's NE685M13 transistor is designed for low noise, high
gain, and low cost requirements. This high f
for low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.

T part is well suited

OUTLINE DIMENSIONS

PACKAGE OUTLINE M13

(Units in mm)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE685M13

EIAJ1 REGISTERED NUMBER 2SC5617

PACKAGE OUTLINE M13

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12.0

NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT dB 1.5 2.5

2

|S21E|

2

hFE

ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1

IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1

3

CRE

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7.0 11.0

Forward Current Gain at VCE = 3 V, IC = 10 mA 75 140

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7

3-155

NE685M13

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 9.0

VCEO Collector to Emitter Voltage V 6.0

VEBO Emitter to Base Voltage V 2.0

C Collector Current mA 30

I

2

PT

T

Total Power Dissipation mW 140

J Junction Temperature °C 150

TSTG Storage Temperature °C -65 to +150

Notes:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy
PCB.

TYPICAL PERFORMANCE CURVES

(TA = 25°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

300

250

(mW)

tot

200

Mounted on Glass Epoxy PCB
(1.08 cm2 X 1.0 mm (t) )

ORDERING INFORMATION

PART NUMBER QUANTITY

NE685M13-T3-A 3k pcs./reel

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

0.6

(pF)

re

0.5

0.4

f = 1 MHz

150

140

100

50

Total Power Dissipation, P

0

25 50 75 100 125 150

Ambient Temperature, TA (ºC)

COLLECTOR CURRENT VS.

BASE TO EMITTER VOLTAGE

30

VCE = 3 V

25

(mA)

C

20

15

10

Collector Current, I

5

0

0.40.2 0.6 0.8 1.0

Base to Emitter Voltage, TBE (V)

0.3

0.2

0.1

Reverse Transfer Capacitance, C

012 4567839

Collector to Base Voltage, VCB (V)

COLLECTOR CURRENT VS.

COLLECTOR TO EMITTER VOLTAGE

40

300 A

30

(mA)

C

20

10

Collector Current, I

024

µ

270 A

µ

240 A

210 A

180 A

150 A
120 A

90 A
60 A

IB = 30 A

6

µ

µ

µ

µ

µ

µ
µ

µ

8

Collector to Emitter Voltage, VCE (V)

3-156

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE685M13

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

FE

100

DC Current Gain, h

10

Collector Current, IC (mA)

INSERTION POWER GAIN VS.

35

30

, (dB)

2

|

25

21e

VCE = 3 V

1100.1 100

FREQUENCY

VCE = 1 V

C

= 10 mA

I

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

16

VCE = 3 V
f = 2 GHz

14

(GHz)

12

T

10

8

6

4

2

Gain Bandwidth Product, f

0

Collector Current, IC (mA)

INSERTION POWER GAIN VS.

FREQUENCY

35

30

, (dB)

2

|

25

21e

101 100

V

CE

= 3 V

C

= 10 mA

I

20

15

10

5

Insertion Power Gain |S

0

0.1 1 10

Frequency, f (GHz)

INSERTION POWER GAIN, MAG, MSG VS.

COLLECTOR CURRENT

20

VCE = 1 V

2

I

21e

f = 1 GHz

15

10

5

Insertion Power Gain, IS

Maximum Stable Gain, MSG (dB)

Maximum Available Gain, MAG (dB)

0

1 10 100

Collector Current, IC (mA)

20

15

10

5

Insertion Power Gain |S

0

0.1 1 10

Frequency, f (GHz)

INSERTION POWER GAIN, MAG, MSG VS.

COLLECTOR CURRENT

20

MAGMSG

2

I

21e

2

|S

21e

|

VCE = 3 V
f = 1 GHz

15

MAGMSG

2

|S

21e

|

10

5

Insertion Power Gain, IS

Maximum Stable Gain, MSG (dB)

Maximum Available Gain, MAG (dB)

0

1 10 100

Collector Current, IC (mA)

3-157

NE685M13

TYPICAL PERFORMANCE CURVES (TA = 25°C)

INSERTION POWER GAIN, MAG, MSG VS.

COLLECTOR CURRENT

20

VCE = 1 V

15

f = 2 GHz

MSG

MAG

2

I

21e

10

5

Insertion Power Gain, IS

Maximum Stable Gain, MSG (dB)

Maximum Available Gain, MAG (dB)

0

1 10 100

Collector Current, IC (mA)

NOISE FIGURE, ASSOCIATED GAIN VS.

COLLECTOR CURRENT

5

VCE = 1 V
f = 1 GHz

4

3

INSERTION POWER GAIN, MAG, MSG VS.

COLLECTOR CURRENT

20

VCE = 3 V
f = 2 GHz

2

I

21e

15

MSG

10

2

|S

21e

|

MAG

2

|S

21e

|

5

Insertion Power Gain, IS

Maximum Stable Gain, MSG (dB)

Maximum Available Gain, MAG (dB)

0

1 10 100

Collector Current, IC (mA)

NOISE FIGURE, ASSOCIATED GAIN VS.

COLLECTOR CURRENT

20

G

a

16

(dB)

a

12

5

VCE = 3 V
f = 1 GHz

4

3

Ga

20

16

12

(dB)

a

2

NF

Noise Figure NF, (dB)

1

0

1 10 100

Collector Current, IC (mA)

8

Associated Gain, G

4

0

2

NF

Noise Figure NF, (dB)

1

0

1 10 100

Collector Current, IC (mA)

8

Associated Gain, G

4

0

3-158

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE685M13

NOISE FIGURE, ASSOCIATED GAIN VS.

COLLECTOR CURRENT

5

VCE = 1 V
f = 2 GHz

4

3

Ga

2

Noise Figure NF, (dB)

1

0

1 10 100

NF

Collector Current, IC (mA)

20

16

(dB)

a

12

8

Associated Gain, G

4

0

NOISE FIGURE, ASSOCIATED GAIN VS.

5

4

3

2

Noise Figure NF, (dB)

1

0

COLLECTOR CURRENT

VCE = 3 V
f = 2 GHz

G

a

NF

1 10 100

Collector Current, IC (mA)

20

16

(dB)

a

12

8

4

Associated Gain, G

0

3-159

NE685M13

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

+90º

-90º

S

11

246

+45º

81012

-45º

+0º

j10

0

-j10

j25

10 25

-j25

j50

j100

S

11

100

50

S

22

-j100

-j50

+180º

+135º

S

21

-135º

NE685M13
VC = 2 V, IC = 5 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.879 -11.18 10.895 169.79 0.017 85.46 0.980 -8.26 0.05 27.96

0.200 0.854 -24.79 10.531 159.27 0.033 76.47 0.943 -15.79 0.13 25.05

0.300 0.813 -36.17 9.980 150.16 0.047 70.32 0.894 -22.51 0.19 23.25

0.400 0.764 -46.95 9.356 142.00 0.059 65.55 0.843 -28.26 0.24 21.98

0.500 0.677 -58.07 8.645 133.16 0.069 59.99 0.756 -32.30 0.37 21.00

0.600 0.634 -67.22 7.952 127.18 0.077 57.31 0.701 -35.05 0.43 20.16

0.700 0.597 -75.01 7.355 122.04 0.083 55.43 0.657 -38.07 0.47 19.46

0.800 0.560 -82.74 6.818 117.17 0.089 53.53 0.615 -40.74 0.51 18.82

0.900 0.530 -89.38 6.315 113.03 0.095 52.58 0.579 -42.38 0.56 18.24

1.000 0.501 -95.62 5.872 109.14 0.099 51.55 0.542 -44.09 0.61 17.73

1.100 0.478 -101.10 5.483 105.72 0.104 50.81 0.515 -45.60 0.65 17.22

1.200 0.459 -106.13 5.137 102.65 0.108 50.49 0.491 -47.11 0.68 16.79

1.400 0.425 -114.91 4.543 97.14 0.116 50.07 0.451 -49.16 0.76 15.94

1.600 0.399 -122.59 4.068 92.39 0.123 50.09 0.417 -50.64 0.82 15.18

1.800 0.379 -129.37 3.678 88.20 0.131 50.25 0.394 -52.06 0.88 14.49

2.000 0.364 -135.19 3.369 84.36 0.138 50.70 0.377 -53.48 0.92 13.87

2.200 0.350 -140.57 3.103 80.91 0.146 51.06 0.362 -55.00 0.96 13.27

2.400 0.339 -145.78 2.882 77.59 0.154 51.17 0.351 -56.70 0.99 12.73

2.600 0.330 -150.79 2.695 74.45 0.162 51.40 0.343 -58.44 1.02 11.43

2.800 0.321 -155.59 2.529 71.46 0.170 51.61 0.335 -60.35 1.04 10.49

3.000 0.312 -160.44 2.386 68.56 0.178 51.67 0.328 -62.49 1.06 9.75

3.200 0.306 -165.34 2.263 65.81 0.186 51.55 0.324 -65.12 1.08 9.16

3.400 0.301 -170.19 2.150 63.12 0.194 51.53 0.323 -67.74 1.09 8.63

3.600 0.296 -175.11 2.048 60.52 0.202 51.43 0.323 -70.53 1.10 8.14

3.800 0.291 -179.68 1.957 58.06 0.210 51.16 0.327 -73.25 1.10 7.72

4.000 0.286 176.05 1.874 55.66 0.218 51.06 0.332 -75.87 1.11 7.33

1

Note:

1. Gain Calculations:

MAG =

21

|

|S

(

|S

12

|

K ±

2

K - 1

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

).

When K ≤ 1, MAG is undefined and MSG values are used.

3-160

MSG =

|S

21

|

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

NE685M13

+90º

-90º

+45º

S

12

5

2010

15

+0º

-45º

0

-j10

j10

10

-j25

j25

j50

j100

+135º

S

11

25

100

50

S

22

-j100

-j50

+180º

S

21

-135º

NE685M13
VC = 3 V, IC = 10 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.830 -14.89 15.406 167.04 0.015 79.15 0.969 -9.82 0.15 30.06

0.200 0.791 -30.25 14.529 155.17 0.029 74.31 0.918 -18.40 0.18 26.96

0.300 0.734 -43.35 13.385 144.88 0.041 68.95 0.852 -25.66 0.25 25.11

0.400 0.675 -55.24 12.178 136.08 0.050 64.19 0.786 -31.42 0.32 23.86

0.500 0.584 -67.02 10.911 127.43 0.058 59.86 0.690 -34.94 0.46 22.75

0.600 0.541 -76.48 9.839 121.58 0.064 57.87 0.631 -37.08 0.52 21.86

0.700 0.506 -84.40 8.943 116.65 0.069 56.90 0.586 -39.46 0.57 21.10

0.800 0.473 -92.17 8.163 112.19 0.075 55.96 0.546 -41.46 0.62 20.39

0.900 0.448 -98.62 7.477 108.45 0.079 55.53 0.513 -42.47 0.66 19.74

1.000 0.423 -104.84 6.891 104.94 0.083 55.34 0.478 -43.52 0.71 19.17

1.100 0.405 -110.11 6.385 101.90 0.088 55.24 0.455 -44.52 0.75 18.61

1.200 0.390 -114.95 5.947 99.15 0.092 55.23 0.435 -45.57 0.78 18.09

1.400 0.364 -123.47 5.216 94.22 0.100 55.77 0.401 -46.75 0.85 17.16

1.600 0.344 -130.71 4.640 90.04 0.109 56.13 0.373 -47.51 0.90 16.29

1.800 0.329 -137.11 4.179 86.28 0.117 56.73 0.355 -48.39 0.94 15.52

2.000 0.318 -142.56 3.809 82.88 0.126 57.15 0.341 -49.39 0.97 14.81

2.200 0.308 -147.52 3.499 79.73 0.135 57.35 0.330 -50.56 1.00 14.15

2.400 0.300 -152.37 3.242 76.73 0.144 57.60 0.322 -51.97 1.02 12.70

2.600 0.294 -157.24 3.024 73.87 0.153 57.62 0.316 -53.62 1.03 11.86

2.800 0.287 -161.72 2.834 71.13 0.162 57.53 0.310 -55.48 1.05 11.10

3.000 0.282 -166.38 2.670 68.47 0.171 57.39 0.304 -57.60 1.06 10.45

3.200 0.277 -170.99 2.526 65.91 0.180 57.27 0.302 -60.04 1.07 9.89

3.400 0.273 -175.85 2.397 63.40 0.189 56.83 0.301 -62.78 1.07 9.38

3.600 0.270 179.25 2.282 60.99 0.197 56.62 0.302 -65.63 1.08 8.91

3.800 0.266 174.83 2.179 58.67 0.207 56.19 0.306 -68.43 1.08 8.51

4.000 0.263 170.53 2.084 56.42 0.215 55.67 0.311 -71.13 1.08 8.11

1

Note:

1. Gain Calculations:

MAG =

21|

|S

(K ±

|S

12|

2

K - 1 ).

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

When K ≤ 1, MAG is undefined and MSG values are used.

3-161

MSG =

|S

21|

, K =

|S

12|

2

1 + | ∆ | - |S

2 |S12 S21|

11| - |S22|

2

2

∆ = S

,

11 S22 - S21 S12

NE685M13

NE685M13 NONLINEAR MODEL

BJT NONLINEAR MODEL PARAMETERS

Parameters Q1 Parameters Q1

IS 7e-16 MJC 0.34

BF 109 XCJC 0.7

NF 1 CJS 0

VAF 15 VJS 0.75

IKF 0.19 MJS 0

ISE 7.9e-13 FC 0.5

NE 2.19 TF 2.5e-12

BR 1 XTF 5.2

NR 1.08 VTF 4.58

VAR 12.4 ITF 0.011

IKR 0 PTF 0

ISC 0 TR 1e-9

NC 2 EG 1.11

RE 1.3 XTB 0

RB 10 XTI 3

RBM 8.34 KF 0

IRB 0.009 AF 1

RC 10

CJE 0.4e-12

VJE 0.812

MJE 0.5

CJC 0.18e-12

VJC 0.75

(1) Gummel-Poon Model

(1)

SCHEMATIC

CBPKG

C

C

CB

L

BX

L

B

Base

L

E

L

EX

Emitter

ADDITIONAL PARAMETERS

Parameters 68533

CCB 0.1e-12

CCE 0.14e-12

LB 0.35e-9

LE 0.4e-9

CCBPKG 0.05e-12

CCEPKG 0.05e-12

LBX 0.05e-9

LCX 0.05e-9

LEX 0.05e-9

Q1

L

CX

Collector

C

CE

C

CEPKG

UNITS

Parameter Units

time seconds (S)

capacitance farads (F)

inductance henries (H)

resistance ohms (Ω)

voltage volts (V)

current amps (A)

Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.

EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]

DATA SUBJECT TO CHANGE WITHOUT NOTICE

MODEL RANGE
Frequency: 0.1 to 4.0 GHz

Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA
Date: 09/02

Internet: http://WWW.CEL.COM

03/18/2002

3-162

4590 Patrick Henry Drive

(

Santa Clara, CA 95054-1817
Telephone: [phone]
Facsimile:

408) 988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Lead (Pb) < 1000 PPM

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Not Detected (*)

Mercury < 1000 PPM Not Detected

Cadmium < 100 PPM Not Detected

Hexavalent Chromium < 1000 PPM Not Detected

PBB < 1000 PPM Not Detected

PBDE < 1000 PPM Not Detected

If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.

Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.

3-163