NEC NE680M03 Technical data
查询NE680M03供应商
PRELIMINARY DATA SHEET
NE680M03NPN SILICON TRANSISTOR
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 8 GHz
• LOW NOISE FIGURE:
NF = 1.9 dB at 2 GHz
DESCRIPTION
The NE680M03 transistor is designed for low noise, high gain,
and low cost applications. This high f
T part is ideal for low
voltage/low current applications. NEC's new low profile/flat
lead style "M03" package is ideal for today's portable wireless
applications. The NE680 is also available in chip, Micro-x, and
six different low cost plastic surface mount package styles.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
OUTLINE DIMENSIONS
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1
Note:
1. This dimension was changed
effective 04/2000 from 1.4 mm
to 1.2 mm. Products with "04" or
a higher number indicated for
month of manufacture in lot
numbers have the new dimension.
Example of Lot No. Identification
0 6 xxxxxxx
0.45
(0.9)
0.45
0.2±0.1
0.59±0.05
In-company control code
Month of manufacture
(Example: Jan. = 1, Feb. = 2, etc.
Oct. = X, Nov. = Y, Dec. = Z)
Year of manufacture
(Last digit of year, 2000 = 0)
TH
1
(Units in mm)
0.3±0.1
3
0.15
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
+0.1
-0.05
PART NUMBER NE680M03
EIAJ1 REGISTERED NUMBER 2SC5434
PACKAGE OUTLINE M03
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 3 V, IC = 5 mA, f = 2 GHz GHz 5.5 8.0
NF Noise Figure at VCE = 3 V, IC = 6 mA, f = 2 GHz dB 1.9 3.2
2
|S21E|
2
hFE
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0
3
CRE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5
Forward Current Gain at VCE = 3 V, IC = 5 mA 80 145
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.3 0.7
California Eastern Laboratories
NE680M03
NONLINEAR MODEL
SCHEMATIC
Base
CE
Q1
C
CEPKG
L
CX
Collector
CBPKG
C
C
CB
L
BX
L
B
C
L
E
L
EX
BJT NONLINEAR MODEL PARAMETERS
Parameters Q1 Parameters Q1
IS 5.98e-16 MJC 0.15
BF 179 XCJC 1
NF 1.04 CJS 0
VAF17 VJS 0.75
IKF 0.02 MJS 0
ISE 1.0e-6 FC 0.5
NE 30 TF 8.7e-12
BR 16 XTF 20
NR 1.04 VTF 0.3
VAR 100 ITF 0.04
IKR 6.85e-3 PTF 120
ISC 1.5e-9 TR 0.635e-9
NC 20 EG 1.11
RE 0.50 XTB 0
RB 8.54 XTI 3
RBM 2 KF 0
IRB 4e-4 AF 1
RC 10
CJE 0.358e-12
VJE 0.86
MJE 0.5
CJC 0.162e-12
VJC 0.52
(1)
Emitter
UNITS
Parameter Units
time seconds
capacitance farads
inductance henries
resistance ohms
voltage volts
current amps
ADDITIONAL PARAMETERS
Parameters 680M03
CCB 0.08e-12
CCE 0.08e-12
LB 0.4e-9
LE 0.8e-9
CCBPKG 0.08e-12
CCEPKG 0.08e-12
LBX 0.12e-9
LCX 0.10e-9
LEX 0.12e-9
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE = 0.5 V to 6 V, IC = 0.5 mA to 15 mA
Date: 11/98
(1) Gummel-Poon Model
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