NEC NE34018, NE34018-T1, NE34018-T2 Datasheet

DATA SHEET

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

NE34018 is a n-channel HJ-FET housed in MOLD package.

FEATURES

x

Low noise figure
NF = 0.6 dB TYP. at f = 2 GHz

x

High associated gain
Ga = 16 dB TYP. at f = 2 GHz

x

Gate width: Wg = 400 Pm

x

4 pins super mini mold

x

Tape & reel packaging only available

ORDERING INFORMATION

NE34018

PACKAGE DIMENSIONS

in millimeters

2.1 ±0.2

1.25 ±0.1

+0.1

(1.25)

2.0 ±0.2

0.650.60

+0.1

–0.05

0.3

–0.05

0.4

0.3

V63

12

HJ-FET

+0.1

–0.05

0.3
(1.3)

+0.1

–0.05

43

0.3

PART NUMBER

QUANTITY PACKING STYLE

NE34018-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 3

(Source), Pin 4 (Drain) face to
perforation side of the tape.

NE34018-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 1

(Source), Pin 2 (Gate) face to
perforation side of the tape.

Please contact with responsible NEC person, if you require evaluation

*

sample. Unit sample quantity shall be 50 pcs. (Part number for sample
order: NE34018)

ABSOLUTE MAXIMUM RATINGS (TA = 25 qqqqC)

Drain to Source Voltage V
Gate to Source Voltage V
Gate Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T

DS
GS
D

stg

4.0 V

3.0 V

ð

DSS

I

tot
ch

150 mW
125

65 to +125

ð

mA

C

q

C

q

0.9 ±0.1

0 to 0.1

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

+0.1

0.15

–0.05

Document No. P11618EJ3V0DS00 (3rd edition)
Date Published September 1997 N
Printed in Japan

1996©

RECOMMENDED OPERATING CONDITION (TA = 25 qC)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT

NE34018

Drain to Source Voltage V
Drain Current I
Input Power P

DS

D

in

ELECTRICAL CHARACTERISTICS (TA = 25 qqqqC)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
Output Power at 1dB Gain

Compression Point

DSS

I

CLASSIFICATION

GSO

V

I

DSS

I

GS(off)

ð 0.5 10

30 120 mA

ð0.2 ð0.8 ð2.0 V
gm 30 ð mS
NF 0.6 1.0 dB
Ga 14 16 dB
Gs 18 dB

(1dB)

P

23V
530mA

+10 dBm

GS

= ð3 V

P

V

A

DS

= 2 V, VGS = 0 V

V

DS

= 2 V, ID = 100 PA

V
VDS = 2 V, ID = 5 mA
VDS = 2 V, ID = 5 mA, f = 2 GHz

15 dBm VDS = 3 V. IDS = 30 mA (RF off)

f = 2 GHz

RANK I

DSS

(mA) MARKING
63 30 to 65 V63
64 60 to 120 V64

2

NE34018

TYPICAL CHARACTERISTICS (TA = 25

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

qqqq

C)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

250

100

VGS = 0 V

200

80

150

–0.2 V

60

100

- Total Power Dissipation - mW

50

tot

P

00

50 100 150 200

A

- Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

VDS = 2 V

40

- Drain Current - mA

D

I

20

–0.4 V

–0.6 V

12345

VDS - Drain to Source Voltage - V

NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT

1.0

VDS = 2 V

0.9

f = 2 GHz

a

G

80

0.8

18

17

16

60

40

- Drain Current - mA

D

I

20

0
–2.0 –1.0 0

GS

- Gate to Source Voltage - V

V

0.7

0.6

NF - Noise Figure - dB

0.5

NF

0.4

01020

D

- Drain Current - mA

I

15

14

- Associated Gain - dB

a

G

30

3

S-PARAMETER

MAG. AND ANG.

DS

V

= 2 V, ID = 5 mA

NE34018

FREQUENCY S

MHz MAG. ANG.

11

MAG. ANG.

(deg.)

21

S

MAG. ANG.

(deg.)

12

S

MAG. ANG.

(deg.)

500 .997 ð15.9 5.053 165.6 .020 82.6 .805 ð9.0
600 .994 ð19.1 5.070 162.8 .024 80.1 .801 ð10.7
700 .989 ð22.0 4.994 160.1 .027 79.0 .800 ð12.3
800 .983 ð25.1 4.992 157.4 .031 77.0 .798 ð13.9
900 .978 ð27.9 4.975 154.9 .035 75.1 .797 ð15.4

1000 .972 ð31.0 4.893 152.0 .039 73.7 .793 ð17.0
1100 .954 ð33.8 4.879 149.4 .042 71.8 .791 ð18.4
1200 .960 ð36.1 4.824 147.1 .045 71.0 .792 ð19.6
1300 .951 ð38.8 4.790 144.6 .048 69.9 .785 ð20.9
1400 .945 ð41.2 4.746 142.2 .050 68.9 .782 ð22.2
1500 .934 ð43.7 4.696 139.8 .054 68.2 .780 ð23.4
1600 .926 ð46.3 4.655 137.4 .056 65.4 .777 ð24.4
1700 .914 ð48.4 4.588 135.1 .058 65.7 .775 ð25.5
1800 .901 ð50.7 4.526 132.8 .061 63.9 .769 ð26.3
1900 .887 ð52.9 4.463 130.7 .063 62.7 .766 ð27.3
2000 .807 ð58.3 4.308 124.8 .064 58.5 .699 ð27.7
2100 .787 ð60.6 4.241 122.6 .066 57.1 .697 ð28.6
2200 .775 ð62.9 4.193 120.4 .067 56.1 .685 ð29.8
2300 .755 ð64.7 4.122 118.4 .070 55.8 .680 ð30.2
2400 .745 ð66.8 4.069 116.5 .070 54.8 .675 ð31.1
2500 .732 ð68.5 4.017 114.7 .072 55.0 .671 ð31.9
2600 .720 ð70.8 3.977 112.7 .074 54.5 .666 ð32.5
2700 .706 ð72.8 3.913 110.7 .075 53.1 .657 ð33.6
2800 .691 ð75.3 3.892 108.9 .077 53.1 .656 ð34.1
2900 .677 ð77.2 3.833 106.9 .078 51.7 .650 ð34.8
3000 .657 ð79.5 3.783 105.0 .080 51.5 .642 ð35.6

22

S

(deg.)

4

AMP. PARAMETERS

DS

V

= 2 V, ID = 5 mA

NE34018

FREQUENCY

MHz

GUmaxdBGAmaxdB~S21~

dB

2

~S12~

dB

2

K DelaynsMason’s U

dB

G1
dB

500 40.42 14.07 ð34.10 .02 .078 21.81 4.53
600 37.65 14.10 ð32.49 .04 .078 19.09 4.46
700 35.02 13.97 ð31.28 .05 .074 16.61 4.44
800 33.18 13.97 ð30.09 .07 .074 14.81 4.40

900 31.99 13.94 ð29.02 .09 .070 13.68 4.37
1000 30.73 13.79 ð28.27 .10 .079 12.63 4.31
1100 28.48 13.77 ð27.56 .14 .072 10.45 4.26
1200 28.95 13.67 ð26.99 .13 .065 11.01 4.28
1300 28.01 13.61 ð26.40 .14 .068 10.24 4.16
1400 27.36 13.53 ð25.95 .15 .068 9.73 4.11
1500 26.48 13.43 ð25.35 .16 .065 8.97 4.08
1600 25.87 13.36 ð25.02 .19 .067 8.48 4.02
1700 25.04 13.23 ð24.73 .20 .064 7.82 3.98
1800 24.27 13.11 ð24.35 .23 .065 7.27 3.88
1900 23.54 12.99 ð23.99 .26 .057 6.72 3.83
2000 20.17 12.68 ð23.88 .47 .164 27.008 4.57 2.92
2100 19.63 12.55 ð23.67 .50 .063 25.640 4.20 2.89
2200 19.19 12.45 ð23.48 .52 .059 25.263 3.99 2.75
2300 18.67 12.30 ð23.16 .55 .056 24.878 3.67 2.70
2400 18.34 12.19 ð23.05 .57 .054 24.607 3.51 2.64
2500 18.00 12.08 ð22.91 .59 .049 25.175 3.33 2.59
2600 17.70 11.99 ð22.65 .60 .056 25.565 3.17 2.54
2700 17.30 11.85 ð22.46 .63 .055 24.387 3.00 2.45
2800 17.07 11.80 ð22.24 .63 .050 25.422 2.82 2.45
2900 16.71 11.67 ð22.10 .67 .057 24.032 2.66 2.38
3000 16.31 11.56 ð21.89 .69 .053 23.850 2.45 2.30

G2

dB

5