NEC NDL5551P2, NDL5551P2C, NDL5551PC, NDL5551P1C, NDL5551P Datasheet
DATA SHEET
PHOTO DIODE
NDL5551P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φφφφ
µµµµ
50
m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5551P Series is InGaAs avalanche photo diode modules with multimode fiber. They are designed for
detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
Smaller dark current ID = 5 nA
•
High quantum efficiency
•
High Speed response fC = 1.2 GHz @M = 20
•
Detecting area size
•
Coaxial module with multimode fiber (GI-50/125)
•
NDL5551P1 and NDL5551P2 have a flange.
η
= 90 % @ λ = 1 300 nm, M = 1
η
= 77 % @ λ = 1 550 nm, M = 1
φ
50 µm
NDL5551P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
+0.0
φ
6.0
–0.1
6.9±0.3
–0.1
+0.0
6.0
231
Shrunk tube
φ
2.5
φ
0.45
φ
2.0
30.0 MAX.
12.5 MIN.
3.0±0.3
PACKAGE DIMENSIONS
in millimeters
NDL5551P1
Optical Fiber:
GI-50/125
Length: 1 m MIN.
φ
14.0±0.1
φ
3.9±0.5
6.9±0.3
φ
2– 2.2
1.5
7.0±0.3
231
18.0±0.1
LEAD CONNECTION
1 Anode (Negative)
2 Cathode (Positive)
3 Case
Optical Fiber:
NDL5551P2
GI-50/125
Length: 1 m MIN.
Shrunk tube Shrunk tube
2.5
6.0
+0.0
–0.1
φ
2.0
30.0 MAX.
4.0±0.1
12.5 MIN.
4.0±0.3
3
12
φ
6.0
0.5±0.1
2.5±0.1
+0.0
–0.1
φ
231
12.0±0.1
16.0±0.2
φ
2.5
2– 2.5
2.0
30.0 MAX.
12.5 MIN.
φ
7.0±0.15
•
The information in this document is subject to change without notice.
Document No. P11103EJ2V0DS00 (2nd edition)
(Previous No. LD-2371)
Date Published March 1996 P
Printed in Japan
The mark
••••
shows major revised points.
1994©
ORDERING INFORMATION
•
•
••
NDL5551P Series
Part Number
NDL5551P Without Connector no flange
NDL5551PC With FC-PC Connector
NDL5551PD With SC-P C Connector
NDL5551P1 Without Connector flat mount flange
NDL5551P1C With FC-PC Connector
NDL5551P1D With SC-P C Connector
NDL5551P2 Without Connector vertical flange
NDL5551P2C With FC-PC Connector
NDL5551P2D With SC-P C Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25
Parameter Symbol Ratings Unit
Forward Current I
Reverse Current I
Operating Case Temperature T
Storage Temperature T
Available Connector
F
R
C
stg
C)
°°°°
10 mA
0.5 mA
−
40 to +85
−
40 to +85
°
C
°
C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Reverse Breakdown Voltage V
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current I
Multiplied Dark Current I
Terminal Capacitance C
Cut-off Frequency f
Quantum Effici ency
Responsivity S
Multiplication Factor M
Excess Noise Exponent x
Excess Noise Factor F M = 10, f = 35 MHz, B = 1 MHz 5
(BR)R
*1
δ
D
DM
C
η
ID = 100 µA 50 70 100 V
(BR)R
VR = V
M = 2 to 10 1 5 nA
t
(BR)R
VR = V
M = 10 1 1. 5 GHz
M = 20 1.2
λ
= 1 300 nm, M = 1 76 90 %
λ
= 1 550 nm, M = 1 65 77
λ
= 1 300 nm, M = 1 0.8 0.94 A/W
λ
= 1 550 nm, M = 1 0.81 0.96
λ
= 1 300 nm, IP0 = 1.0 µA3040
R
V
= V (@ ID = 1 µA)
λ
= 1 300 nm, 1550 nm, IP0 = 1.0 µA0.7
C)
°°°°
× 0.9 5 30 nA
× 0.9, f = 1 MHz 0.4 0.75 pF
0.2 %/°C
*1:
(BR)R
V
δ
=
< 25 °C + ∆T °C > −V
∆
T °C ⋅ V
(BR)R
< 25 °C
(BR)R
>
< 25 °C
>
2
NDL5551P Series
TYPICAL CHARACTERISTICS
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
η
60
40
20
Quantum Efficiency (%)
0
0.9 1.0 1.1 1.31.2 1.4 1.5 1.6 1.7
Wavelength λ ( m)
µ
TC = 25 ˚C
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
–3
10
10
10
10
–4
–5
–6
λ = 1 300 nm
P0 = 1.0 A
I
C = 25 ˚C
T
Iph
µ
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
∆
0
–10
–60 –40 0 40 10080
Responsivity (Relative Value) S/S (%)
–20 20 60
Operating Case Temperature T
DARK CURRENT vs.
REVERSE VOLTAGE
–6
10
–7
10
(A)
D
–8
10
–9
10
Dark Current I
–10
10
0 40 10080
TC = 85 ˚C
C
= 65 ˚C
T
T
C
= 25 ˚C
20 60
Reverse Voltage VR (V)
λ = 1 300 nm
C
(˚C)
T
C
= –20 ˚C
••••
–7
10
–8
10
Dark Current, Photo Current ID, lph (A)
–9
10
–10
10
0 20 40 60 10080
Reverse Voltage VR (V)
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
3
10
2
10
TC = –20 ˚C
ID
1
10
TC = 25 ˚C
Multiplication Factor M
0
10
0 40 10080
20 60
TC = 65 ˚C
TC = 85 ˚C
Reverse Voltage VR (V)
3
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