NEC NDL5531PD, NDL5531P, NDL5531P1, NDL5531PC, NDL5531P1D Datasheet
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DATA SHEET
PHOTO DIODE
NDL5531P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φφφφ
µµµµ
30
m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
Small dark current ID = 5 nA
•
Small terminal capacitance Ct = 0.35 pF @ 0.9 V
•
High quantum efficiency
•
High speed response fC = 2.5 GHz @ M = 10
•
Detecting area size
•
Coaxial module with single mode fiber (SM-9/125)
η
= 90 % @ λ = 1 300 nm, M = 1
η
= 77 % @ λ = 1 550 nm, M = 1
φ
30 µm
(BR)R
NDL5531P
Optical Fiber:
SM-9/125
Length: 1 m MIN.
+0.0
φ
6.0
–0.1
6.9±0.3
–0.1
+0.0
6.0
231
Shrunk tube
φ
2.5
φ
0.45
φ
2.0
30.0 MAX.
12.5 MIN.
3.0±0.3
PACKAGE DIMENSIONS
in millimeters
NDL5531P1
Optical Fiber:
SM-9/125
Length: 1 m MIN.
φ
14.0±0.1
φ
3.9±0.5
6.9±0.3
φ
2– 2.2
1.5
7.0±0.3
231
18.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
Optical Fiber:
NDL5531P2
SM-9/125
Length: 1 m MIN.
Shrunk tube Shrunk tube
2.5
6.0
+0.0
–0.1
30.0 MAX.
+0.0
φ
6.0
–0.1
4.0±0.1
12.5 MIN.
3
12
4.0±0.3
φ
2.0
0.5±0.1
2.5±0.1
φ
231
12.0±0.1
16.0±0.2
φ
2.5
2– 2.5
2.0
30.0 MAX.
12.5 MIN.
φ
7.0±0.15
•
Document No. P11352EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The information in this document is subject to change without notice.
The mark
••••
shows major revised points.
1996©
ORDERING INFORMATION
•
Part Number Available Connector Description
NDL5531P Without Connector No Flange
NDL5531PC With FC-PC Connector
NDL5531PD With SC-P C Connector
NDL5531P1 Without Connector Flat Mount Flange
NDL5531P1C With FC-PC Connector
NDL5531P1D With SC-P C Connector
NDL5531P2 Without Connector Vertical Flange
NDL5531P2C With FC-PC Connector
NDL5531P2D With SC-P C Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
NDL5531P Series
Forward Current I
Reverse Current I
Operating Case Temperature T
Storage Temperature T
F
R
C
stg
10 mA
0.5 mA
−40 to +85 °C
−40 to +85 °C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Reverse Breakdown Voltage V
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current I
Multiplied Dark Current I
Terminal Capacitance C
Cut-off Frequency f
Quantum Effici ency
Responsivity S λ = 1 300 nm, M = 1 0.80 0.94 A /W
Multiplication Factor M λ = 1 300 nm, Ipo = 1.0 µA3040
Excess Noise Factor
*2
(BR)R
δ
DM
η
ID = 100 µA 50 70 100 V
*1
D
VR = V
(BR)R
× 0.9 5 25 nA
0.2 %/°C
M = 2 to 10 1 5 nA
t
C
(BR)R
VR = V
× 0.9, f = 1 MHz 0.35 0.60 pF
M = 10 2.5 GHz
λ = 1 300 nm, M = 1 76 90 %
λ = 1 550 nm, M = 1 65 77
λ = 1 550 nm, M = 1 0.81 0.96
R
V
= V (@ ID = 1 µA)
x λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µA0.7
F M = 10, f = 35 MHz, B = 1 MHz 5
*1
*2
δ
=
F = M
(BR)R
V
< 25 °C + ∆T °C > −V
∆
T °C ⋅ V
X
(BR)R
< 25 °C
(BR)R
>
< 25 °C
>
2
NDL5531P Series
TYPICAL CHARACTERISTICS (TC = 25 °°°°C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
η
60
40
20
Quantum Efficiency (%)
0
0.9 1.0 1.1 1.31.2 1.4 1.5 1.6 1.7
Wavelength λ ( m)
µ
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
–3
10
–4
10
–5
10
, lph (A)
–6
D
10
λ = 1 300 nm
po
= 1.0 A
I
Iph
µ
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
∆
0
–10
–60 –40 0 40 10080
Responsivity (Relative Value) S/S (%)
–20 20 60
DARK CURRENT vs.
REVERSE VOLTAGE
–6
10
–7
10
(A)
D
–8
10
–9
10
Dark Current I
–10
10
0 40 10080
C
T
20 60
Case Temperature T
TC = 85 ˚C
T
C
= 65 ˚C
= 25 ˚C
Reverse Voltage VR (V)
λ = 1 300 nm
C
(˚C)
C
= –20 ˚C
T
•
–7
10
–8
10
Dark Current, Photo Current I
–9
10
–10
10
0 20 40 60 10080
Reverse Voltage VR (V)
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
3
10
2
10
TC = –20 ˚C
D
I
10
1
TC = 25 ˚C
Multiplication Factor M
0
10
0 40 10080
20 60
Reverse Voltage VR (V)
TC = 65 ˚C
TC = 85 ˚C
3
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