NEC NDL5471RD, NDL5471RC Datasheet

DATA SHEET

PHOTO DIODE

NDL5471R Series

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS

φφφφ

DESCRIPTION

The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long
wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with
high efficiency.

FEATURES

• Small dark current ID = 0.1 nA

• High quantum efficiency

• Cut-off frequency fC = 1.5 GHz MIN.

• Detecting area size

• Low operating voltage

120

µµµµ

m InGaAs PIN PHOTO DIODE RECEPTACLE MODULE

= 86 % @ λ = 1 300 nm

η

= 80 % @ λ = 1 550 nm

η

120 µm

φ

2– 4 Depth±1.5

M8×0.75

NDL5471RC

for FC Connector

13.44±0.1
19±0.1

C0.5

3

7.92

4

8.5

2.0

6.8

PACKAGE DIMENSIONS

in millimeters

2– 2.2

8.9±0.1

3.5

3.4

4.4

2.0±0.1

8.0±0.1

6.0±0.1

12.5

MIN.

PIN CONNECTIONS

Case

4

1

1

Cathode Anode

3

NDL5471RD

for SC Connector

12.8±0.3

18.0±0.1

22.0±0.3

2.0

6.8

4

3

1

2– 2.3

4–C1.0

2.0±0.1

6.0±0.1

12.5

MIN.

7.4

9.4±0.1

14.2±0.2

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P10263EJ4V0DS00 (4th edition)
Date Published April 1999 NS CP(K)
Printed in Japan

The mark

••••

shows major revised points.

©

1995, 1999

ORDERING INFORMATION

Part Number Device Type
NDL5471RC FC type receptacle module
NDL5471RD SC type receptacle module

NDL5471R Series

ABSOLUTE MAXIMUM RATINGS (TA = 25

C, unless otherwise specified)

°°°°

Parameter Symbol Ratings Unit
Reverse Voltage V
Forward Current I
Reverse Current I
Optical Input Power P
Operating Case Temperature T

Storage Temperature

R

F

R

in

C

stg

T

20 V
10 mA

0.5 mA
8mW

–40 to +85 °C
–40 to +85 °C

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Dark Current I
Terminal Capacitance C
Quantum Efficiency

Responsivity S

Cut-off Frequency f

D

VR = 5 V 0.1 1.0 nA

t

VR = 5 V, f = 1.0 MHz 1.1 1.5 pF

= 1 300 nm, V

η

λ

= 1 550 nm, V

λ

= 1 300 nm, VR = 5 V 0.78 0.89 A/W

λ

= 1 550 nm, V

λ

C

VR = 5 V, RL = 50 Ω, −3dB 1.5 GHz

C)

°°°°

R

= 5 V 75 86 %

R

= 5 V 80

R

= 5 V 1.0

2

Data Sheet P10263EJ4V0DS00

TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)

NDL5471R Series

WAVELENGTH DEPENDENCE

OF QUANTUM EFFICIENCY

100

80

η

60

40

20

Quantum Efficiency (%)

0

0.9 1.0 1.1 1.31.2 1.4 1.5 1.6 1.7
Wavelength λ ( m)

µ

REVERSE VOLTAGE DEPENDENCE
OF DARK CURRENT

10

C

= +75 ˚C

T

1.0

(nA)

D

0.1

+50 ˚C
+25 ˚C

0 ˚C

–25 ˚C

10

∆

0

Responsivity (Relative Value) S/S (%)

–10

–60

10

1.0

(nA)

D

0.1

TEMPERATURE DEPENDENCE

OF RESPONSIVITY

λ = 1 300 nm

0

–20

–40

Case Temperature T

20 40 60 80

C

(˚C)

TEMPERATURE DEPENDENCE

OF DARK CURRENT

VR = 5 V

100

Dark Current I

0.01

0.001

Reverse Voltage V

FREQUENCY RESPONSE

Response (3dB/div.)

0

Dark Current I

0.01

0.001

10020

R

(V)

–60 –40 –20 0 20 40 60 80 100

REVERSE VOLTAGE DEPENDENCE
OF TERMINAL CAPACITANCE

5

(pF)

t

1

Terminal Capacitance C

0.5

0.01

2.5 5.0

Frequency f (GHz)

VR = 10 V
λ = 1 300 nm
RL = 50 Ω

C

R

(˚C)

(V)

Case Temperature T

0.1 1 10
Reverse Voltage V

f = 1.0 MHz

100

Remark

The graphs indicate nominal characteristics.

Data Sheet P10263EJ4V0DS00

3