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DATA SHEET
PHOTO DIODE
NDL5471R Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φφφφ
DESCRIPTION
The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long
wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with
high efficiency.
FEATURES
• Small dark current ID = 0.1 nA
• High quantum efficiency
• Cut-off frequency fC = 1.5 GHz MIN.
• Detecting area size
• Low operating voltage
120
µµµµ
m InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
= 86 % @ λ = 1 300 nm
η
= 80 % @ λ = 1 550 nm
η
120 µm
φ
2– 4 Depth±1.5
M8×0.75
NDL5471RC
for FC Connector
13.44±0.1
19±0.1
C0.5
3
7.92
4
8.5
2.0
6.8
PACKAGE DIMENSIONS
in millimeters
2– 2.2
8.9±0.1
3.5
3.4
4.4
2.0±0.1
8.0±0.1
6.0±0.1
12.5
MIN.
PIN CONNECTIONS
Case
4
1
1
Cathode Anode
3
NDL5471RD
for SC Connector
12.8±0.3
18.0±0.1
22.0±0.3
2.0
6.8
4
3
1
2– 2.3
4–C1.0
2.0±0.1
6.0±0.1
12.5
MIN.
7.4
9.4±0.1
14.2±0.2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10263EJ4V0DS00 (4th edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
©
1995, 1999
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ORDERING INFORMATION
Part Number Device Type
NDL5471RC FC type receptacle module
NDL5471RD SC type receptacle module
NDL5471R Series
ABSOLUTE MAXIMUM RATINGS (TA = 25
C, unless otherwise specified)
°°°°
Parameter Symbol Ratings Unit
Reverse Voltage V
Forward Current I
Reverse Current I
Optical Input Power P
Operating Case Temperature T
Storage Temperature
R
F
R
in
C
stg
T
20 V
10 mA
0.5 mA
8mW
–40 to +85 °C
–40 to +85 °C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Dark Current I
Terminal Capacitance C
Quantum Efficiency
Responsivity S
Cut-off Frequency f
D
VR = 5 V 0.1 1.0 nA
t
VR = 5 V, f = 1.0 MHz 1.1 1.5 pF
= 1 300 nm, V
η
λ
= 1 550 nm, V
λ
= 1 300 nm, VR = 5 V 0.78 0.89 A/W
λ
= 1 550 nm, V
λ
C
VR = 5 V, RL = 50 Ω, −3dB 1.5 GHz
C)
°°°°
R
= 5 V 75 86 %
R
= 5 V 80
R
= 5 V 1.0
2
Data Sheet P10263EJ4V0DS00
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TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
NDL5471R Series
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
η
60
40
20
Quantum Efficiency (%)
0
0.9 1.0 1.1 1.31.2 1.4 1.5 1.6 1.7
Wavelength λ ( m)
µ
REVERSE VOLTAGE DEPENDENCE
OF DARK CURRENT
10
C
= +75 ˚C
T
1.0
(nA)
D
0.1
+50 ˚C
+25 ˚C
0 ˚C
–25 ˚C
10
∆
0
Responsivity (Relative Value) S/S (%)
–10
–60
10
1.0
(nA)
D
0.1
TEMPERATURE DEPENDENCE
OF RESPONSIVITY
λ = 1 300 nm
0
–20
–40
Case Temperature T
20 40 60 80
C
(˚C)
TEMPERATURE DEPENDENCE
OF DARK CURRENT
VR = 5 V
100
Dark Current I
0.01
0.001
Reverse Voltage V
FREQUENCY RESPONSE
Response (3dB/div.)
0
Dark Current I
0.01
0.001
10020
R
(V)
–60 –40 –20 0 20 40 60 80 100
REVERSE VOLTAGE DEPENDENCE
OF TERMINAL CAPACITANCE
5
(pF)
t
1
Terminal Capacitance C
0.5
0.01
2.5 5.0
Frequency f (GHz)
VR = 10 V
λ = 1 300 nm
RL = 50 Ω
C
R
(˚C)
(V)
Case Temperature T
0.1 1 10
Reverse Voltage V
f = 1.0 MHz
100
Remark
The graphs indicate nominal characteristics.
Data Sheet P10263EJ4V0DS00
3