NEC KA4xxx Technical data

DATA SHEET

SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

• Compact package

• Resistors built-in type

PACKAGE DRAWING (Unit: mm)

+0.1

0.3

–0

• Complementary to KN4xxx

3

ORDERING INFORMATION

1.6 ± 0.1

PART NUMBER PACKAGE

KA4xxx SC-75 (USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage VCBO 60 V

Collector to Emitter Voltage V

Emitter to Base Voltage V

Collector Current (DC) I

Collector Current (pulse)

Note

Total Power Dissipation P

Junction Temperature T

Storage Temperature T

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

PART NUMBER MARK R1 R2 UNIT PART NUMBER MARK R1 R2 UNIT

KA4A4M A4 10.0 10.0 kΩ KA4L4L K4 47.0 22.0 kΩ

KA4F4M B4 22.0 22.0 kΩ KA4A4Z Y4 10.0 kΩ

KA4L4M C4 47.0 47.0 kΩ KA4F4Z Z4 22.0 kΩ

KA4L3M D4 4.7 4.7 kΩ KA4L4Z N4 47.0 kΩ

KA4L3N E4 4.7 10.0 kΩ KA4F3M P4 2.2 2.2 kΩ

KA4L3Z F4 4.7 kΩ KA4F3P Q4 2.2 10.0 kΩ

KA4A3Q G4 1.0 10.0 kΩ KA4F3R R4 2.2 47.0 kΩ

KA4A4P H4 10.0 47.0 kΩ KA4A4L S4 10.0 4.7 kΩ

KA4F4N X4 22.0 47.0 kΩ KA4L4K T4 47.0 10.0 kΩ

CEO 50 V

EBO 5 V

C 0.1 A

IC(pulse) 0.2 A

T 0.2 W

j 150 °C

stg –55 to +150 °C

EQUIVALENT CIRCUIT

0.8 ± 0.1

2

0.2

0.5

1.6 ± 0.1

+0.1 –0

1.0

0.5

1

0.6

0.75 ± 0.05

PIN CONNECTION

3

2

1

R

R2

1

1: Emitter

2: Base

3: Collector

0.15

0 to 0.1

+0.1 –0.05

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D16495EJ3V0DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan

The mark shows major revised points.

2002

KA4xxx

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Collector Cut-off Current ICBO VCB = 50 V, IE = 0 100 nA

DC Current Gain hFE1 VCE = 5.0 V, IC = 5.0 mA Note1 -

hFE2 VCE = 5.0 V, IC = 50 mA Note1 -

Collector Saturation Voltage VCE(sat) IC = 5.0 mA, IB = 0.25 mA 0.2 V

Low-level Input Voltage VIL VCE = 5.0 V, IC = 100 µA Note2 V

High-level Input Voltage VIH VCE = 0.2 V, IC = 5.0 mA Note2 V

Input Resistor R1 Note3 kΩ

Emitter to Base Resistor R2 Note3 kΩ

Note 1

PART NUMBER hFE 1 hFE2 UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

KA4A4M 35 100 80 -

KA4F4M 60 195 90 -

KA4L4M 85 340 95 -

KA4L3M 20 80 80 -

KA4L3N 35 100 80 -

KA4L3Z 135 600 100 -

KA4A3Q 35 100 80 -

KA4A4P 85 340 95 -

KA4F4N 85 340 95 -

KA4L4L 60 195 90 -

KA4A4Z 135 600 100 -

KA4F4Z 135 600 100 -

KA4L4Z 135 600 100 -

KA4F3M 8 50 50 -

KA4F3P 35 100 80 -

KA4F3R 85 340 95 -

KA4A4L 20 80 80 -

KA4L4K 35 100 80 -

Note 2

PART NUMBER VIL VIH UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

KA4A4M 0.8 3.0 V

KA4F4M 0.8 4.0 V

KA4L4M 0.8 5.0 V

KA4L3M 0.8 3.0 V

KA4L3N 0.6 3.0 V

KA4L3Z 0.5 1.2 V

KA4A3Q 0.5 2.0 V

KA4A4P 0.5 3.0 V

KA4F4N 0.6 3.0 V

KA4L4L 0.9 6.0 V

KA4A4Z 0.5 2.0 V

KA4F4Z 0.5 3.0 V

KA4L4Z 0.5 4.0 V

KA4F3M 0.8 3.0 V

KA4F3P 0.5 2.0 V

KA4F3R 0.5 2.0 V

KA4A4L 0.9 6.0 V

KA4L4K 2.0 8.0 V

2

Data Sheet D16495EJ3V0DS

KA4xxx

Note 3

PART NUMBER R1 R2 UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

KA4A4M 7.00 10.00 13.00 7.00 10.00 13.00 kΩ

KA4F4M 15.40 22.00 28.60 15.40 22.00 28.60 kΩ

KA4L4M 32.90 47.00 61.10 32.90 47.00 61.10 kΩ

KA4L3M 3.29 4.70 6.11 3.29 4.70 6.11 kΩ

KA4L3N 3.29 4.70 6.11 7.00 10.00 13.00 kΩ

KA4L3Z 3.29 4.70 6.11 kΩ

KA4A3Q 0.70 1.00 1.30 7.00 10.00 13.00 kΩ

KA4A4P 7.00 10.00 13.00 32.90 47.00 61.10 kΩ

KA4F4N 15.40 22.00 28.60 32.90 47.00 61.10 kΩ

KA4L4L 32.90 47.00 61.10 15.40 22.00 28.60 kΩ

KA4A4Z 7.00 10.00 13.00 kΩ

KA4F4Z 15.40 22.00 28.60 kΩ

KA4L4Z 32.90 47.00 61.10 kΩ

KA4F3M 1.54 2.20 2.86 1.54 2.20 2.86 kΩ

KA4F3P 1.54 2.20 2.86 7.00 10.00 13.00 kΩ

KA4F3R 1.54 2.20 2.86 32.90 47.00 61.10 kΩ

KA4A4L 7.00 10.00 13.00 3.29 4.70 6.11 kΩ

KA4L4K 32.90 47.00 61.10 7.00 10.00 13.00 kΩ

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

250

200

150

100

50

0

0 50 100 150 200

PT - Total Power Dissipation - mW

T

A - Ambient Temperature - °C

Data Sheet D16495EJ3V0DS

3

[KA4A4M] TYPICAL CHARACTERISTICS (T

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

50

40

30

20

10

- Collector Current - mA

C

I

0

20

VCE - Collector to Emitter Voltage - V

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs.

1000

VCE = 5.0 V

100

10

IB = 220 A

200 A 180 A 160 A 140 A 120 A 100 A

80 A

µ

4

TA = 75°C

25°C

−25°C

A = 25°C)

µ

µ µ µ µ µ

µ

6810

COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

0.5

VIN= 5.0 V

0.4

0.3

0.2

0.1

0

0 2040 6080100

VCE - Collector to Emitter Voltage - V

IC - Collector Current - mA

COLLECTOR CURRENT

1

IC = 10・I

B

TA = 75°C

25°C 25°C

0.1

−

KA4xxx

15.0 V

10.0 V

hFE - DC Current Gain

1

110100

IC - Collector Current - mA

0.01

110100

VCE(sat) - Collector Saturation Voltage - V

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

100

10

1

VCE = 0.2 V

TA = −25°C

1000

100

10

VCE= 5.0 V

TA = 75°C

25°C

25°C

−

A

µ

25°C

VIN - Input Voltage - V

0.1

110100

IC - Collector Current - mA

75°C

1

IC - Collector Current -

0.4 0.6 0.8 1 1.2 1.4 1.6

VIN - Input Voltage - V

RESISTER vs. AMBIENT TEMPERATURE

20

16

12

8

4

R - Resister - kΩ

0

-25 0 25 50 75 100

TA - Ambient Temperature - °C

4

Data Sheet D16495EJ3V0DS

[KA4F4M] TYPICAL CHARACTERISTICS (T

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

50

IB = 290 A

µ

40

30

20

10

- Collector Current - mA

C

I

0

20

VCE - Collector to Emitter Voltage - V

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs.

1000

VCE = 5.0 V

100

hFE - DC Current Gain

10

110100

IC - Collector Current - mA

240 A

190 A

140 A

90 A

40 A

46810

TA = 75°C

−25°C

µ

µ

µ

µ

µ

25°C

A = 25°C)

COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

0.5

0.4

0.3

VIN= 5.0 V

0.2

0.1

0

0204060

VCE - Collector to Emitter Voltage - V

IC - Collector Current - mA

COLLECTOR CURRENT

1

IC = 10・I

B

TA = 75°C

25°C

0.1

0.01

110100

VCE(sat) - Collector Saturation Voltage - V

−25°C

IC - Collector Current - mA

KA4xxx

15.0 V

10.0 V

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

100

10

VCE = 0.2 V

1000

A

µ

100

TA = 75°C

25°C

−

25°C

1

TA = −25°C

25°C

10

75°C

VIN - Input Voltage - V

0.1

110100

IC - Collector Current - mA

1

IC - Collector Current -

0.40.60.8 1 1.21.41.61.8

VIN - Input Voltage - V

RESISTER vs. AMBIENT TEMPERATURE

50

40

30

20

10

R - Resister - kΩ

0

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Data Sheet D16495EJ3V0DS

5

[KA4L4M] TYPICAL CHARACTERISTICS (T

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

50

IB = 220 A

40

30

20

10

- Collector Current - mA

C

I

0

20

VCE - Collector to Emitter Voltage - V

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs.

1000

VCE = 5.0 V

100

µ

46810

A = 25°C)

µ

170 A

µ

120 A

µ

70 A

µ

20 A

TA = 75°C

25°C 25°C

−

COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

0.5

VIN= 5.0 V

0.4

0.3

0.2

0.1

0

02040

VCE - Collector to Emitter Voltage - V

10.0 V

15.0 V

IC - Collector Current - mA

COLLECTOR CURRENT

10

1

IC = 10・I

TA= 75°C

B

25°C 25°C

−

0.1

KA4xxx

hFE - DC Current Gain

10

110100

IC - Collector Current - mA

0.01

110100

VCE(sat) - Collector Saturation Voltage - V

IC - Collector Current - mA

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

100

10

1

VCE = 0.2 V

TA = −25°C

25°C 75°C

VIN - Input Voltage - V

0.1

110100

IC - Collector Current - mA

1000

100

10

VCE= 5.0 V

TA= 75°C

A

µ

25°C

1

IC - Collector Current -

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VIN - Input Voltage - V

−25°C

RESISTER vs. AMBIENT TEMPERATURE

80

60

40

20

R - Resister - kΩ

0

-25 0 25 50 75 100

TA - Ambient Temperature - °C

6

Data Sheet D16495EJ3V0DS

[KA4L3M] TYPICAL CHARACTERISTICS (T

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

50

40

30

20

10

- Collector Current - mA

C

I

0

20

VCE - Collector to Emitter Voltage - V

DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs.

1000

VCE = 5.0 V

100

10

hFE - DC Current Gain

1

110100

IC - Collector Current - mA

µ

IB = 460 A

µ

410 A

µ

360 A

µ

310 A

µ

260 A

µ

210 A

µ

160 A

46810

TA = 75°C

−

25°C 25°C

A = 25°C)

COLLECTOR TO EMITTER VOLTAGE vs.

COLLECTOR CURRENT

0.5

0.4

0.3

0.2

0.1

0

VCE - Collector to Emitter Voltage - V

VIN= 5.0 V 10.0 V

0 20406080100

IC - Collector Current - mA

COLLECTOR CURRENT

1

IC = 10・I

B

TA = 75°C

25°C 25°C

−

0.1

0.01

110100

VCE(sat) - Collector Saturation Voltage - V

IC - Collector Current - mA

KA4xxx

15.0 V

INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. INPUT VOLTAGE

100

VCE = 0.2 V

10

1

VIN - Input Voltage - V

0.1

110100

TA = −25°C

25°C 75°C

IC - Collector Current - mA

1000

A

µ

VCE= 5.0 V

100

TA= 75°C 25°C

10

1

IC - Collector Current -

0.6 0.8 1 1.2 1.4 1.6

VIN - Input Voltage - V

−25°C

RESISTER vs. AMBIENT TEMPERATURE

10

8

6

4

2

R - Resister - kΩ

0

-25 0 25 50 75 100

TA - Ambient Temperature - °C

Data Sheet D16495EJ3V0DS

7

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