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DATA SHEET
COMPOUND TRANSISTOR
BB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The BB1 Series is an N type small signal transistor and enables the reduction of component counts and
downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic
appliances and OA equipments such as VCRs and TVs.
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
BB1 SERIES LISTS
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitte (E)
2. Collector (C)
3. Base (B)
(KΩ)R
R
Products
BB1A4A
BB1L2Q 0.47 4.7
BB1A3M 1.0 1.0
BB1F3P 2.2 10
BB1J3P 3.3 10
BB1L3N 4.7 10
BB1A4M 10 10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11739EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
1
−
(KΩ)
2
10
2002
1998©
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base volgate V
Colletor to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (Pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(DC)
C(pulse)
B(DC)
CBO
CEO
EBO
Note 1
T
j
stg
Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %
BB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
V
CBO
FE1
FE2
FE3
CE(sat)
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300
Note 2
VCE = 2.0 V, IC = 0.5 A 300
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
IC = 0.5 A, IB = 5 mA 0.27 0.4 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1 SERIES
30 V
25 V
10 V
0.7 A
1.0 A
0.02 A
250 mW
150
−55 to +150 °C
0.3 V
−−−Ω
71013
°C
kΩ
−
−
−
BB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 150 400
Note 2
VCE = 2.0 V, IC = 0.5 A 300 700
Note 2
VCE = 2.0 V, IC = 0.7 A 135 600
Note 2
VIN = 5.0 V, IC = 0.5 A 0.2 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
0.3 V
329 470 611
3.29 4.7 6.11
−
−
−
Ω
kΩ
2
Data Sheet D11739EJ2V0DS
BB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 80
Note 2
VCE = 2.0 V, IC = 0.5 A 100
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
VIN = 5.0 V, IC = 0.5 A 0.3 0.4 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300
Note 2
VCE = 2.0 V, IC = 0.5 A 300
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
VIN = 5.0 V, IC = 0.3 A 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1 SERIES
0.3 V
0.7 1.0 1.3
0.7 1.0 1.3
0.3 V
1.54 2.2 2.86
71013
−
−
−
kΩ
kΩ
−
−
−
kΩ
kΩ
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300 600
Note 2
VCE = 2.0 V, IC = 0.5 A 300 700
Note 2
VCE = 2.0 V, IC = 0.7 A 135 600
Note 2
VIN = 5.0 V, IC = 0.2 A 0.14 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
0.3 V
2.31 3.3 4.29
71013
−
−
−
kΩ
kΩ
Data Sheet D11739EJ2V0DS
3
BB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300
Note 2
VCE = 2.0 V, IC = 0.5 A 300
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
VIN = 5.0 V, IC = 0.2 A 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300
Note 2
VCE = 2.0 V, IC = 0.5 A 300
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
VIN = 5.0 V, IC = 0.2 A 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1 SERIES
0.3 V
3.29 4.7 6.11
71013
0.3 V
71013
71013
−
−
−
kΩ
kΩ
−
−
−
kΩ
kΩ
4
Data Sheet D11739EJ2V0DS
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
BB1 SERIES
Data Sheet D11739EJ2V0DS
5
BB1 SERIES
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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