NEC BB1 Technical data
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DATA SHEET
COMPOUND TRANSISTOR
BB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The BB1 Series is an N type small signal transistor and enables the reduction of component counts and
downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic
appliances and OA equipments such as VCRs and TVs.
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
BB1 SERIES LISTS
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitte (E)
2. Collector (C)
3. Base (B)
(KΩ)R
R
Products
BB1A4A
BB1L2Q 0.47 4.7
BB1A3M 1.0 1.0
BB1F3P 2.2 10
BB1J3P 3.3 10
BB1L3N 4.7 10
BB1A4M 10 10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11739EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
1
−
(KΩ)
2
10
2002
1998©
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base volgate V
Colletor to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (Pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(DC)
C(pulse)
B(DC)
CBO
CEO
EBO
Note 1
T
j
stg
Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %
BB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Collector saturation voltage
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
V
CBO
FE1
FE2
FE3
CE(sat)
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 300
Note 2
VCE = 2.0 V, IC = 0.5 A 300
Note 2
VCE = 2.0 V, IC = 0.7 A 135
Note 2
IC = 0.5 A, IB = 5 mA 0.27 0.4 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
BB1 SERIES
30 V
25 V
10 V
0.7 A
1.0 A
0.02 A
250 mW
150
−55 to +150 °C
0.3 V
−−−Ω
71013
°C
kΩ
−
−
−
BB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
DC current gain h
Low level output voltage V
Low level input voltage V
Input resistance R
E-to-B resistance R
µ
Note 2 PW ≤ 350
s, duty cycle ≤ 2 %
CBO
FE1
FE2
FE3
OL
IL
VCB = 30 V, IE = 0 100 nA
Note 2
VCE = 2.0 V, IC = 0.1 A 150 400
Note 2
VCE = 2.0 V, IC = 0.5 A 300 700
Note 2
VCE = 2.0 V, IC = 0.7 A 135 600
Note 2
VIN = 5.0 V, IC = 0.5 A 0.2 0.3 V
Note 2
VCE = 5.0 V, IC = 100 µA
1
2
0.3 V
329 470 611
3.29 4.7 6.11
−
−
−
Ω
kΩ
2
Data Sheet D11739EJ2V0DS
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