NEC 3SK255-T2, 3SK255-T1, 3SK255 Datasheet

©

1993

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK255

FEATURES

• Low VDD Use : (VDS = 3.5 V)

• Driving Battery

• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)

• High Power Gain : G

PS = 18.0 dB TYP. (f = 900 MHz)

• Suitable for uses as RF amplifier in UHF TV tuner.

• Automatically Mounting : Embossed Type Taping

• Small Package : 4 Pins Super Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8

*1

V

Gate2 to Source Voltage V

G2S ±8

*1

V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current I

D 25 mA

Total Power Dissipation PD 130 mW
Channel Temperature Tch 125 °C
Storage Temperature T

stg –55 to +125 °C

*1: RL ≥ 10 kΩ
*2: Free air

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

RF AMPLIFIER FOR UHF TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS SUPER MINI MOLD

Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan

2.1±0.2

1.25±0.1

2

3

1

4

2.0±0.2

1.25

0.650.60

+0.1

–0.05

0.3

+0.1

–0.05

0.4

(1.3)

+0.1

–0.05

0.3

+0.1

–0.05

0.3

0.9±0.1

0.3

0 to 0.1

+0.1

–0.05

0.15

PACKAGE DIMENSIONS

(Unit: mm)

PIN CONNECTIONS

1. Source

2. Drain

3. Gate2

4. Gate1

3SK255

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA

Drain Current IDSX 0.5 7.0 mA

VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
Gate1 to Source Cutoff Voltage VG1S(off) –1.0 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) 0 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V

Forward Transfer Admittance |yfs|141924mS

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 kHz
Input Capacitance Ciss 1.2 1.7 2.2 pF

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Output Capacitance Coss 0.5 1.0 1.5 pF

f = 1 MHz
Reverse Transfer Capacitance Crss 0.01 0.03 pF

Power Gain Gps 15 18 21 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure NF 1.8 3.0 dB

f = 900 MHz

IDSX Classification

Rank U1G
Marking U1G
IDSX (mA) 0.5 to 7.0

3SK255

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

T

A

– Ambient Temperature – °C

P

D

– Total Power Dissipation – mW

0

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

– Drain to Source Voltage – V

I

D

– Drain Current – mA

DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

I

D

– Drain Current – mA

0

FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

|y

fs

| – Forward Transfer Admittance – mS

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

I

D

– Drain Current – mA

|y

fs

| – Forward Transfer Admittance – mS

INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

iss

– Input Capacitance – pF

130 mW

100

200

25 50 75 100 125

V

G2S

= 3.0 V

V

G1S

= 1.2 V

1.0 V

0.8 V

0.6 V

0.4 V

0.2 V

0

5

10

15

20

25

510

V

DS

= 3.5 V

V

G2S

= 3.5 V

3.0 V

2.5 V

5

10

15

20

25

0.5 1.0 1.5 2.0 2.5

V

DS

= 3.5 V

f = 1 kHz

0
–0.5

8

16

24

32

40

0 0.5 1.0 1.5 2.0

V

DS

= 3.5 V

f = 1 kHz

0

8

16

24

32

40

10 20

V

G2S

= 3.5 V

3.0 V

2.5 V

1.5 V

1.0 V

I

D

= 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 1 MHz

–1.0 0 1.0 2.0 3.0 4.0

1.0

2.0

3.0

4.0

2.0 V

1.5 V

1.0 V

3.0 V

2.5 V

2.0 V

1.5 V

1.0 V

V

G2S

= 3.5 V

2.0 V

5.0

0