NEC 3SK254-T2, 3SK254-T1, 3SK254 Datasheet
©
1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK254
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain : G
PS = 19.0 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Super Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage V
G1S ±8
*1
V
Gate2 to Source Voltage VG2S ±8
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage V
G2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 130
*2
mW
Channel Temperature T
ch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1: R
L ≥ 10 kΩ
*2: Free air
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
2.1±0.2
1.25±0.1
2
3
1
4
2.0±0.2
1.25
0.650.60
+0.1
–0.05
0.3
+0.1
–0.05
0.4
(1.3)
+0.1
–0.05
0.3
+0.1
–0.05
0.3
0.9±0.1
0.3
0 to 0.1
+0.1
–0.05
0.15
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
Document No. P10585EJ2V0DS00 (2nd edition)
(Previous No. TD-2307)
Date Published August 1995 P
Printed in Japan
3SK254
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA
Drain Current IDSX 0.1 5.0 mA
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.5 V
Gate1 to Source Cutoff Voltage VG1S(off) –1.0 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) 0 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V
Forward Transfer Admittance |yfs|141823mS
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 kHz
Input Capacitance Ciss 2.4 2.9 3.4 pF
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Output Capacitance Coss 0.9 1.2 1.5 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 0.01 0.03 pF
Power Gain Gps 16 19 22 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure 1 NF1 2.0 3.0 dB
f = 470 MHz
Noise Figure 2 NF2 0.8 2.3 dB
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 55 MHz
IDSX Classification
Rank U1E
Marking U1E
IDSX (mA) 0.1 to 0.5
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