NEC 3SK253-T2, 3SK253-T1, 3SK253 Datasheet
©
1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : G
PS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Package : 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8
*1
V
Gate2 to Source Voltage V
G2S ±8
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current I
D 25 mA
Total Power Dissipation PD 200
*2
mW
Channel Temperature Tch 125 °C
Storage Temperature T
stg –55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
2
3
1
4
2.9±0.2
(1.8)
0.950.85
+0.1
–0.05
0.4
+0.1
–0.05
0.6
(1.9)
+0.1
–0.05
0.4
+0.1
–0.05
0.4
0.8
0 to 0.1
+0.1
–0.06
0.16
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
+0.2
–0.3
2.8
+0.2
–0.1
1.5
+0.2
–0.1
1.1
5°
5°
5°
5°
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
3SK253
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA
Drain Current IDSX 0.5 7.0 mA
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
Gate1 to Source Cutoff Voltage VG1S(off) –1.0 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) 0 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V
Forward Transfer Admittance |yfs|141924mS
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 kHz
Input Capacitance Ciss 1.5 2.0 2.5 pF
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Output Capacitance Coss 0.5 1.0 1.5 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 0.01 0.03 pF
Power Gain Gps 15 18 21 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure NF 1.8 3.0 dB
f = 900 MHz
IDSX Classification
Rank U1G/UAG*
Marking U1G
IDSX (mA) 0.5 to 7.0 * Old specification / New specification
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