NEC 3SK134B-VM, 3SK134B-T2, 3SK134B-T1, 3SK134B Datasheet
©
1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
FEATURES
• High Power Gain : G ps = 23.0 dB TYP. (@ = 900 MHz)
• Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Surface Mount Package : 4 Pins Mini Mold (EIAJ: SC-61)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage V
G1S ±8 (±10)
*1
V
Gate2 to Source Voltage VG2S ±8 (±10)
*1
V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage V
G2D 18 V
Drain Current ID 25 mA
Total Power Dissipation PD 200 mW
Channel Temperature T
ch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 : R
L ≥ 10 kΩ
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
PACKAGE DIMENSIONS
(Unit : mm)
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
2.9±0.2
2.8
– 0.3
+0.2
1.5
– 0.1
+0.2
(1.8)
0.85 0.95
0.6
– 0.05
+0.1
0.4
– 0.05
+0.1
0.4
– 0.05
+0.1
0.4
– 0.05
+0.1
(1.9)
12
43
5
o
5
o
5
o
5
o
0.8
1.1
– 0.1
+0.2
0.16
– 0.05
+0.1
0 to 0.1
Document No. P10566EJ2V0DS00 (2nd edition)
(Previous No. TD-2398)
Date Published August 1995 P
Printed in Japan
3SK134B
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA
Drain Current IDSX 0.4 8.0 mA VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V
Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2SS(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V
Forward Transfer Admittance |yfs| 25.0 29.0 35.0 mS
VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
Input Capacitance Ciss 1.5 2.5 3.5 pF
VDS = 10 V, VG2S = 4 V, ID = 10 mA
Output Capacitance Coss 0.6 1.1 1.6 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 0.02 0.03 pF
Power Gain Gps 20.0 23.0 dB
VDS = 10 V, VG2S = 4 V, ID = 10 mA
Noise Figure NF 2.4 3.5 dB
f = 900 MHz
IDSX Classification
Rank U55/UEE U56/UEF
Marking U55 U56
IDSX (mA) 0.4 to 5.0 3.0 to 8.0
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