Page 1
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
fs
| = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
| y
• Low capacitance
iss
C
= 4.5 pF (V
• Includes diode and high resistance at G - S
DS
= 5 V, V
GS
= 0 V, f = 1 MHz)
DATA SHEET
JUNCTION FIELD EFFECT TRANSI STO R
2SK660
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK660 SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
Note
Remark
GS
= –1.0 V
V
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note
V
DSX
GDO
D
G
T
j
stg
20 V
–20 V
10 mA
10 mA
100 mW
125 °C
–55 to +125 °C
EQUIVALENT CIRCUIT
Drain
Gate
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK660
Zero Gate Voltage Drain Cut-off Current I
Gate Cut-off Voltage V
Forward Transfer Admittance | y
Forward Transfer Admittance | y
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSS
VDS = 5.0 V, VGS = 0 V 60 500
GS(off)VDS
fs1
|VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 150
fs2
|VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 150 1200
iss
oss
rss
= 5.0 V, ID = 1.0 µA
VDS = 5.0 V
GS
= 0 V
V
f = 1.0 MHz
1.0 V
−
4.5 6.0 pF
1.5 3.0 pF
1.2 3.0 pF
Noise Voltage NV See Test Circuit 1.0 3.0
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
NV (r.m.s)
C = 10 pF
R = 1 kΩ
JIS A
A
µ
S
µ
S
µ
V
µ
2
Data Sheet D10753EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK660
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
- Total Power Dissipation - mW
20
T
P
0
0 306090 150120 180
TA - Ambient Temperature - ˚C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
µ
20
10
0
−0.2−0.4−0.6−0.8−1.0
−10
IG - Gate Current - A
−20
−30
−40
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
0.15 V
400
µ
300
0.10 V
0.05 V
VGS = 0 V
200
- Drain Current - A
D
I
100
0
DS
V
- Drain to Source Voltage - V
−0.05 V
−0.10 V
−0.15 V
−0.20 V
−0.25 V
−0.30 V
1002468
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
VDS = 5 V
0.8
0.6
1.00.80.60.40.2
0.4
- Drain Current - mA
D
I
0.2
−0.4 −0.2 0 0.2 0.4
GS
- Gate to Source Voltage - V
V
FORWARD TRANSFER ADMITTANCE vs.
GATE TO SOURCE VOLTAGE
3.0
2.5
2.0
1.5
1.0
0.5
| - Forward Transfer Admittance - mS
fs
0
| y
−0.4 −0.2−0.3 −0.1
GS
V
- Gate to Source Voltage -
0 0.2 0.40.1 0.3
VDS = 5 V
V
Data Sheet D10753EJ2V0DS
INPUT AND FEEDBACK CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
8
C
5
3
- Capacitance - pF
OSS
2
, C
iSS
C
1
152
DS
- Drain to Source Voltage - V
V
ISS
C
OSS
10 20 50 100
VDS = 0 V
f = 1.0 kHz
3
Page 4
FORWARD TRANSFER ADMITTANCE AND
GATE TO SOURCE CUT-OFF VOLTAGE vs. ZEROGATE VOLTAGE DRAIN CURRENT CO-RELATION
10.0
5.0
2.0
1.0
0.5
| yfs |
VDS = 5 V
2SK660
0.2
0.1
0.05
0.02
0.01
| yfs | - Forward Transfer Admittance - mS
VGS (off) - Gate to Source Cut-off Voltage - V
20 50 100 200 500 1000
10
Zero-Gate Voltage Drain Current - A
VGS (off)
µ
4
Data Sheet D10753EJ2V0DS
Page 5
PACKAGE DRAWING (Unit: mm)
4.0±0.2 2.0±0.2
0.50 TYP.
0.45 TYP.
1.0
TYP.
0.6 TYP.
0.42 TYP.
2SK660
3.0±0.2
12.5 MIN.
DGS
1.27 TYP.
1.27 TYP.
1.35
TYP.
Data Sheet D10753EJ2V0DS
5
Page 6
[MEMO]
2SK660
6
Data Sheet D10753EJ2V0DS
Page 7
[MEMO]
2SK660
Data Sheet D10753EJ2V0DS
7
Page 8
2SK660
•
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
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•
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•
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•
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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•
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M8E 00. 4
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