NEC 2sk3794 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

2SK3794

DESCRIPTION

The 2SK3794 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3794

2SK3794-Z

FEATURES

• Low On-state resistance

R

DS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)

DS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)

R

• Low C

iss: C iss = 760 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 60 V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

DS = 0 V) VGSS ±20 V

C = 25°C) ID(DC) ±20 A

Note1

ID(pulse) ±50 A

TO-251 (MP-3)

TO-252 (MP-3Z)

(TO-251)

(TO-252)

Total Power Dissipation (T

C = 25°C) PT1 30 W

A = 25°C) PT2 1.0 W

Channel Temperature T

Storage Temperature T

Note2

Note3

Single Avalanche Current

Single Avalanche Energy

Repetitive Avalanche Energy

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T

3. I

AR ≤ 15 A, Tch ≤ 150°C

ch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D16778EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan

ch 150 °C

stg

−55 to +150

IAS 15 A

AS 23 mJ

E

AR 23 mJ

The mark shows major revised points.

°C

2004

2SK3794

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

µ

Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10

Gate Leakage Current IGSS

GS = ±20 V, VDS = 0 V

±10

V

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Note

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

| y

fs | VDS = 10 V, ID = 10 A 5 10 S

RDS(on)1 VGS = 10 V, ID = 10 A 35 44

RDS(on)2 VGS = 4.0 V, ID = 10 A 54 78

Input Capacitance Ciss VDS = 10 V 760 pF

Output Capacitance Coss VGS = 0 V 150 pF

Reverse Transfer Capacitance Crss f = 1 MHz 71 pF

Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A 13 ns

Rise Time tr VGS = 10 V 170 ns

R

Turn-off Delay Time td(off)

G = 10 Ω

43 ns

Fall Time tf 34 ns

Total Gate Charge QG VDD = 48 V 17 nC

Gate to Source Charge QGS VGS = 10 V 3.0 nC

Gate to Drain Charge QGD ID = 10 A 4.7 nC

Note

Body Diode Forward Voltage

V

F(S-D) IF = 20 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 20 A, VGS = 0 V 39 ns

Reverse Recovery Charge Qrr

di/dt = 100 A/

µ

s

62 nC

A

µ

A

mΩ

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

RG = 25 Ω

PG.

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

I

D

V

DD

Starting T

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

L

V

DD

V

DS

ch

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10%

0

I

D

10%

0

t

d(on)trtd(off)

90%

t

on

90%

V

GS

90%

I

D

10%

t

f

t

off

2

Data Sheet D16778EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3794

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

04020 60 100 14080 120 160

T

C

- Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

1000

100

10

R

(at V

DS(on)

Limited

= 10 V )

GS

I

D(DC)

Power Dissipation

Limited

I

D(pulse)

100 µs

1 ms

10

ms

DC

PW = 10

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

35

30

25

20

15

10

- Total Power Dissipation - W

T

5

P

0

8020 40 60 100 140120 160

TC - Case Temperature - ˚C

µs

- Drain Current - A

D

I

1

T

C

= 25˚C

Single Pulse

0.1

V

DS -

1000

100

10

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.01

1 10 100

Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

µ

10

100

1 m 10 m 100 m 1 10 100 1000

µ

R

th(ch-A)

th(ch-C)

= 125 ˚C/W

= 4.17 ˚C/W

Single Pulse

PW - Pulse Width - s

Data Sheet D16778EJ2V0DS

3

- Drain Current - A

D

I

2SK3794

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

50

Pulsed

FORWARD TRANSFER CHARACTERISTICS

1000

Pulsed

40

100

V

GS

30

20

10

0

=10 V

4.0 V

10

V

DS

- Drain to Source Voltage - V

234

10

- Drain Current - A

D

1

I

0.1 1234

V

GS

- Gate to Source Voltage - V

TA = −55˚C

25˚C 75˚C

150˚C

V

DS

5

= 10 V

6

GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE

3.0

2.5

VDS = 10 V I

D

= 1 mA

2.0

1.5

1.0

0.5

- Gate to Source Threshold Voltage - V

0

GS(th)

−50

V

80

Pulsed

70

0 50 100 150

ch

- Channel Temperature - ˚C

T

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

60

50

40

VGS = 4.0 V

10 V

30

20

10

0

RDS(on) - Drain to Source On-state Resistance - mΩ

D - Drain Current - A

I

1010.1

100

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100

10

TA = 150˚C

1

0.1

0.01

| yfs | - Forward Transfer Admittance - S

0.01 0.1 1 10 100

D

- Drain Current - A

I

75˚C 25˚C

−50˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

100

90

80

70

60

50

40

30

20

10

0

02468101214161820

RDS(on) - Drain to Source On-state Resistance - mΩ

V

GS - Gate to Source Voltage - V

ID = 10 A

4

Data Sheet D16778EJ2V0DS

2SK3794

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

120

Pulsed

100

80

V

GS

= 4.0 V

10 V

60

40

20

0

- Drain to Source On-state Resistance - mΩ

DS(on)

R

−50

0 50 100 150

T

ch

- Channel Temperature - ˚C

SWITCHING CHARACTERISTICS

1000

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1

t

d(on)

t

d(off)

10.1

D

- Drain Current - A

I

10 100

I

D

= 10 A

CAPACITANCE vs. DRAIN TO

10000

1000

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

SOURCE VOLTAGE

10

0.1

VGS = 0 V f = 1 MHz

C

iss

C

oss

C

rss

1 10 100

VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

t

r

80

16

14

t

f

60

V

DD

= 48 V

30 V 12 V

40

12

10

8

6

V

20

- Drain to Source Voltage - V

DS

V

0

4

0812

GS

V

DS

ID = 20 A

16 20 24 28 32

4

- Gate to Source Voltage - V

GS

2

V

QG - Gate Charge - nC

100

Pulsed

10

1

0.1

IF - Diode Forward Current - A

0.01

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

VGS = 10 V

0 V

0.50

V

F(S-D)

- Source to Drain Voltage - V

1.0

1000

100

trr - Reverse Recovery Time - ns

1.5

Data Sheet D16778EJ2V0DS

REVERSE RECOVERY TIME vs. DRAIN CURRENT

10

1

0.1

1 10 100

F - Drain Foward Current - A

I

di/dt = 100 A/ s

GS

= 0 V

V

µ

5

2SK3794

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100

IAS = 15 A

10

1

160

140

120

E

AS

=

23

mJ

100

80

60

SINGLE AVALANCHE ENERGY DERATING FACTOR

VDD = 30 V

G

= 25 Ω

R

GS

= 20 → 0 V

V

AS

≤ 15 A

I

40

V

DD

10

R

G

V

GS

µ

= 30 V

= 25 Ω

= 20 → 0 V

100

µ

- Single Avalanche Current - A

AS

I

0.1

L - Inductive Load - H

1

m10

m

Energy Derating Factor - %

20

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

125 150

6

Data Sheet D16778EJ2V0DS

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

2SK3794

6.5 ±0.2

5.0 ±0.2

4

1.6 ±0.2

213

1.1 ±0.2

2.32.3

EQUIVALENT CIRCUIT

Drain

Gate

+0.2

1.5 −0.1

5.5 ±0.27.0 MIN.

0.5

0.75

Body Diode

2.3 ±0.2

13.7 MIN.

+0.2

−0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.5 ±0.1

0.5

+0.2

−0.1

+0.2

4

2.0

MAX.

−0.1

2.3 ±0.2

1.5

5.5 ±0.2

10.0 MAX.

MIN.

0.9

0.8

MAX.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.8

0.5 ±0.1

1.0 MIN.

1.8TYP.

0.7

4.3 MAX.0.8

1.1 ±0.2

6.5 ±0.2

5.0 ±0.2

123

2.3 2.3

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D16778EJ2V0DS

7

2SK3794

•

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.

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purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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M8E 02. 11-1