NEC 2sk3793 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3793

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3793 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3793

FEATURES

• Super low on-state resistance

DS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A)

R

DS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A)

• Low C

iss: C iss = 900 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 100 V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature T

Storage Temperature T

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

2. Starting T

DS = 0 V) VGSS ±20 V

C = 25°C) ID(DC) ±12 A

Note1

C = 25°C) PT1 20 W

A = 25°C) PT2 2.0 W

Note2

µ

s, Duty Cycle ≤ 1%

ch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V

I

D(pulse) ±22 A

ch 150 °C

stg −55 to +150 °C

I

AS 10 A

AS 10 mJ

E

Isolated TO-220

(Isolated TO-220)

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D16777EJ1V0DS00 (1st edition) Date Published March 2004 NS CP(K) Printed in Japan

2004

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3793

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10

µ

A

µ

A

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Note

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

fs | VDS = 10 V, ID = 6 A 5.0 10.3 S

| y

DS(on)1 VGS = 10 V, ID = 6 A 89 125 mΩ

R

RDS(on)2 VGS = 4.5 V, ID = 6 A 96 148 mΩ

Input Capacitance Ciss VDS = 10 V 900 pF

Output Capacitance Coss VGS = 0 V 110 pF

Reverse Transfer Capacitance Crss f = 1 MHz 50 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 6 A 9 ns

Rise Time tr VGS = 10 V 5 ns

Turn-off Delay Time td(off) RG = 0 Ω 30 ns

Fall Time tf 4 ns

Total Gate Charge QG VDD = 80 V 21 nC

Gate to Source Charge QGS VGS = 10 V 3.0 nC

Gate to Drain Charge QGD ID = 12 A 6.2 nC

Note

Body Diode Forward Voltage

F(S-D) IF = 12 A, VGS = 0 V 0.89 1.5 V

V

Reverse Recovery Time trr IF = 12 A, VGS = 0 V 52 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 94 nC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

G

= 25 Ω

R

PG.

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

I

D

V

DD

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

I

PG.

50 Ω

2

V

DS

Starting T

L

R

V

DD

L

V

DD

PG.

V

GS

D.U.T.

R

G

L

R

V

DD

0

τ

µ

τ = 1 s

ch

Duty Cycle ≤ 1%

V

GS

Wave Form

V

DS

Wave Form

V

GS

10%

0

V

DS

90%

V

DS

0

10% 10%

t

d(on)trtd(off)tf

t

on

90%

V

GS

90%

t

off

Data Sheet D16777EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

120

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

25

2SK3793

100

20

80

15

60

10

40

5

0

PT - Total Power Dissipation - W

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C

dT - Percentage of Rated Power - %

20

0

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C

ID - Drain Current - A

FORWARD BIAS SAFE OPERATING AREA

100

10

0.1

1

R

DS(on)

(at V

GS

TC = 25°C

ingle pulse

Ｓ

Limited

= 10 V)

I

D(DC)

Power Dissipation Limited

I

D(pulse)

PW = 100 µs

1 ms

10 ms

0.01

0.1 1 10 100

V

DS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

R

= 62.5°C/W

100

th(ch-A)

10

R

= 6.25°C/W

th(ch-C)

1

0.1

Single pulse

0.01

rth(t) - Transient Thermal Resistance - °C/W

100 µ 1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D16777EJ1V0DS

3

Ω

2SK3793

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

25

FORWARD TRANSFER CHARACTERISTICS

100

Pulsed

20

VGS = 10 V

10

TA= 150°C

75°C 25°C

−

15

10

5

ID - Drain Current - A

0

4.5 V

1

0.1

0.01

ID - Drain Current - A

0.001

01234

V

DS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

55°C

VDS = 10 V Pulsed

12345

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

3

VDS = 10 V I

= 1 mA

2.5

D

2

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

TA = −55°C

25°C

10

75°C

150°C

1.5

1

0.1

0.5

VDS = 10 V Pulsed

0

VGS(off) - Gate Cut-off Voltage - V

-100 -50 0 50 100 150 200

Tch - Channel Temperature - °C

0.01

0.01 0.1 1 10 100

| yfs | - Forward Transfer Admittance - S

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

200

Pulsed

150

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

200

Pulsed

150

ID = 12 A

100

VGS = 4.5 V

100

6 A

10 V

RDS(on) - Drain to Source On-state Resistance - m

50

0

0.1 1 10 100

I

D - Drain Current - A

50

0

RDS(on) - Drain to Source On-state Resistance - mΩ

0 5 10 15 20

VGS - Gate to Source Voltage - V

4

Data Sheet D16777EJ1V0DS

Ω

ftr

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

250

Pu ls e d

200

2SK3793

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

VGS = 0 V f = 1 MHz

150

VGS = 4.5 V

1000

C

iss

10 V

100

C

50

0

-100 -50 0 50 100 150 200

RDS(on) - Drain to Source On-state Resistance - m

ch - Channel Temperature - °C

T

10

Ciss, Coss, Crss - Capacitance - pF

0.001 0.1 10 1000

VDS - Drain to Source Voltage - V

oss

C

rss

100

SWITCHING CHARACTERISTICS

VDD = 50 V

= 10 V

V

GS

Ω

R

= 0

G

t

d(off)

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

120

ID = 12 A

100

VDD= 80 V

80

50 V

12

10

8

20 V

10

1

td(on), tr, td(off), tf - Switching Time - ns

0.1 1 10 100

D - Drain Current - A

I

t

d(on)

t

60

40

20

V

GS

V

DS

0

0 5 10 15 20 25

VDS - Drain to Source Voltage - V

QG - Gate Charge - nC

6

4

2

0

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

100

Pulsed

10

VGS = 10 V

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

1000

VGS = 0 V di/dt =100 A/µs

100

4.5 V

1

0 V

VGS - Gate to Source Voltage - V

10

0.1

0.01

IF - Diode Forward Current - A

0 0.5 1 1.5

V

F(S-D) - Source to Drain Voltage - V

Data Sheet D16777EJ1V0DS

1

trr - Reverse Recovery Time - ns

0.1 1 10 100

IF - Diode Forward Current - A

5

µ

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

100

10

IAS = 10 A

SINGLE AVALANCHE ENERGY

DERATING FACTOR

100

VDD = 50 V R

= 25 Ω

80

60

G

V

= 20→0 V

GS

I

≤ 10 A

AS

2SK3793

1

VDD = 50 V R

G

V

GS

Starting T

0.1

IAS - Single Avalanche Current - A

1 µ 10

EAS = 10 mJ

= 25 Ω

= 20→0 V

= 25°C

ch

100 µ 1m 10 m

L - Inductive Load - H

40

20

0

Energy Derating Factor - %

25 50 75 100 125 150

Starting Tch - Starting Channel Temperature - °C

6

Data Sheet D16777EJ1V0DS

PACKAGE DRAWING (Unit: mm)

Isolated TO-220 (MP-45F)

2SK3793

10.0 ±0.3

15.0 ±0.3

2.54

123

φ

3.2 ±0.2

1.3 ±0.20.7 ±0.1

1.5 ±0.2

2.54

EQUIVALENT CIRCUIT

Drain

3 ±0.1

4 ±0.2

13.5 MIN. 12.0 ±0.2

0.65 ±0.1

1. Gate

2. Drain

3. Source

4.5 ±0.2

2.7 ±0.2

2.5 ±0.1

Body

Gate

Gate Protection Diode

Source

Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D16777EJ1V0DS

7

2SK3793

•

The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.

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purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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M8E 02. 11-1