NEC 2sk3749 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG

DESCRIPTION

The 2SK3749 is an N-channel vertical MOS FET. Because

it can be driven by a voltage as low as 2.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

FEATURES

• Gate can be driven by 2.5 V

• Because of its high input impedance, there’s no need to

consider drive current

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3749

SC-70 (SSP)

2SK3749

PACKAGE DRAWING (Unit: mm)

2.1 ± 0.1

1.25 ± 0.1

2

+0.1

–0

0.65

0.3

2.0 ± 0.2

0.65

0.3

0.9 ± 0.1

1 : Source
2 : Gate
3 : Drain

1

3

Marking

0 to 0.1

+0.1

+0.1

–0

0.3

–0.05

0.15

Marking: G27

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 50 V

Gate to Source Voltage (V

DS = 0 V) VGSS ±7.0 V

EQUIVALENT CIRCUIT

Drain

Drain Current (DC) ID(DC) ±100 mA

Note

Drain Current (pulse)

Total Power Dissipation P

Channel Temperature T

ID(pulse) ±200 mA

T 150 mW

ch 150 °C

Storage Temperature Tstg −55 to +150 °C

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Gate

Gate
Protection
Diode

Source

Body
Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D17136EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan

2004

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3749

Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V 1.0

Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V ±5.0

µ

A

µ

A

Gate Cut-off Voltage VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.9 1.2 1.5 V

Forward Transfer Admittance

Drain to Source On-state Resistance

RDS(on)2 VGS = 4.0 V, ID = 10 mA 15 20

Note

Note

fs | VDS = 3.0 V, ID = 10 mA 20 mS

| y

DS(on)1 VGS = 2.5 V, ID = 10 mA 20 40

R

Ω

Ω

Input Capacitance Ciss VDS = 3.0 V 6.0 pF

Output Capacitance Coss VGS = 0 V 8.0 pF

Reverse Transfer Capacitance Crss f = 1 MHz 1.2 pF

Turn-on Delay Time td(on) VDD = 3.0 V, ID = 20 mA 9.0 ns

Rise Time tr VGS = 3.0 V 50 ns

Turn-off Delay Time td(off) RG = 10 Ω 20 ns

Fall Time tf 40 ns

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

TEST CIRCUIT SWITCHING TIME

D.U.T.

V

L

R

GS

V

R

PG.

V

GS

G

0

Wave Form

V

DD

I

D

Wave Form

τ

GS

10%

0

I

D

90%

10%

0

t

d(on)trtd(off)t

90%

V

GS

90%

I

D

10%

f

µ

τ = 1 s
Duty Cycle ≤ 1%

2

t

on

Data Sheet D17136EJ1V0DS

t

off

TYPICAL CHARACTERISTICS (TA = 25°C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPRATURE

180

100

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

2SK3749

150

120

90

60

- Total Power Dissipation - mW

T

30

P

0

300

60

TA - Ambient Temperature - ˚C

TRANSFER CHARACTERISTICS

100

VDS = 3.0 V

10

1

0.1

- Drain Current - mA

D

I

0.01

0.001
0

123

VGS - Gate to Source Voltage - V

80

4.0 V

3.5 V

60

40

- Drain Current - mA

D

I

20

0

90 120 150 180 1

0

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

VDS = 3.0 V

50

TA = 75˚C

25˚C

–25˚C

20

| - Forward Transfer Admittance - mS

fs

|y

10

2 5 10 20 50

1 100

3.0 V

2.5 V

VGS = 2.0 V

2345

TA = –25˚C

25˚C

125˚C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

100

VGS = 2.5 V

50

TA = 75˚C

20

25˚C

–25˚C

10

5

2

- Drain to Source On-State Resistance - Ω

1

DS(on)

R

2 5 10 20 50

1 100

ID - Drain Current - mA

100

- Drain to Source On-State Resistance - Ω

DS(on)

R

Data Sheet D17136EJ1V0DS

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

VGS = 4.0 V

50

20

10

TA = 75˚C

25˚C

–25˚C

5

2

1

2 5 10 20 50

1 100

ID - Drain Current - mA

3

2SK3749

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

30

ID = 1 mA

10 mA

20

50 mA

10

- Drain to Source On-State Resistance - Ω

DS(on)

R

1 23456
VGS - Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

100

t

r

50

Pulsed

CAPACITANCE vs. DRAIN TO

10

5

2

1

- Capacitance - pF

rss

, C

0.5

oss

, C

iss

C

0.2

0.1

7

1 5 10 20 50

100

SOURCE VOLTAGE

VGS = 0 V
f = 1 MHz

2

VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

C

iss

C

oss

C

rss

100

20

10

- Switching Time - ns

f

, t

5

d(off)

, t

r

, t

2

d(on)

t

1

20

10

t

f

t

d(off)

t

d(on)

VDD = 3.0 V
V
R

50 100 200 500

ID - Drain Current - mA

GS

= 3.0 V

G

= 10

10

- Diode Forward Current - mA

F

I

Ω

1000

1

0 0.2 0.4 0.8

V

F(S-D)

- Source to Drain Voltage - V

1.00.6

4

Data Sheet D17136EJ1V0DS

2SK3749

•

The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

•

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M8E 02. 11-1