NEC 2sk3740 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3740 is N-channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, designed for high voltage

applications such as lamp drive, DC/DC converter, and

actuator driver.

FEATURES

• Gate voltage rating: ±30 V

• Low on-state resistance

DS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A)

R

• Low gate charge

G = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)

Q

• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 250 V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation P

Total Power Dissipation (T

Channel Temperature T

Storage Temperature T

Single Avalanche Current

Single Avalanche Energy

DS = 0 V) VGSS ±30 V

C = 25°C) ID(DC) ±20 A

Note1

C = 25°C) PT2 100 W

Note2

ID(pulse) ±60 A

T1 1.5 W

ch 150 °C

stg –55 to +150 °C

IAS 20 A

EAS 40 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T

ch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100

THERMAL RESISTANCE

Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W

Channel to Ambient Thermal Resistance R

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

th(ch-A) 83.3 °C/W

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3740-ZK TO-263 (MP-25ZK)

(TO-263)

µ

H

2SK3740

Document No. D16913EJ1V0DS00 (1st edition) Date Published November 2003 NS CP(K) Printed in Japan

2003

2SK3740

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

µ

Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10

Gate Leakage Current IGSS

GS = ±30 V, VDS = 0 V

±10

V

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.5 4.5 V

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

| y

fs | VDS = 10 V, ID = 10 A 7.0 15 S

RDS(on) VGS = 10 V, ID = 10 A 0.12 0.16

Input Capacitance Ciss VDS = 10 V 1720 pF

Output Capacitance Coss VGS = 0 V 330 pF

Reverse Transfer Capacitance Crss f = 1.0 MHz 170 pF

Turn-on Delay Time td(on) VDD = 125 V, ID = 10 A 17 ns

Rise Time tr VGS = 10 V 17 ns

R

Turn-off Delay Time td(off)

G = 0 Ω

49 ns

Fall Time tf 9 ns

Total Gate Charge QG VDD = 200 V 47 nC

Gate to Source Charge QGS VGS = 10 V 7 nC

Gate to Drain Charge QGD ID = 20 A 25 nC

Body Diode Forward Voltage

Note

V

F(S-D) IF = 20 A, VGS = 0 V 0.91 V

Reverse Recovery Time trr IF = 20 A, VGS = 0 V 210 ns

Reverse Recovery Charge Qrr

di/dt = 100 A/

µ

s

1.4

A

µ

A

Ω

µ

C

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

G

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10%

0

I

90%

D

10%

0

t

d(on)

r

t

on

t

90%

V

GS

90%

I

D

10%

t

d(off)

t

f

t

off

2

Data Sheet D16913EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

µ

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

120

2SK3740

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

120

dT - Percentage of Rated Power - %

100

80

60

40

20

0

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C

100

80

60

40

20

0

PT - Total Power Dissipation - W

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

100

10

I

D(DC)

I

D(pulse)

R

DS(on)

1

Limited

= 10 V)

(at V

GS

Power Dissipation Limited

PW = 100

ｓ

1 ms

10 ms

0.1

ID - Drain Current - A

0.01

0.1 1 10 100 1000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

th(ch-A)

R

= 83.3°C/W

100

10

1

R

th(ch-C)

= 1.25°C/W

0.1

0.01

0.001

rth(t) - Transient Thermal Resistance - °C/W

µ

1 m 10 m 100 m 1 10 100 1000

100

PW - Pulse Width - s

Data Sheet D16913EJ1V0DS

3

C

Ω

2SK3740

70

60

50

40

30

20

10

ID - Drain Current - A

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

VGS = 10 V Pulsed

0

0 5 10 15 20 25 30 35 40

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

4.5 VDS = 10 V

D

= 1.0 mA

I

4

FORWARD TRANSFER CHARACTERISTICS

100

VDS= 10 V

10

Pulsed

1

0.1

TA = 150°C

0.01

0.001

ID - Drain Current - A

0.0001 0123456789101112

FORWARD TRANSFER ADMITTANCE vs.

VGS - Gate to Source Voltage - V

DRAIN CURRENT

100

VDS= 10 V Pu ls e d

10

125°C

75°C 25°C 40°C

−

3.5

1

3

0.1

2.5

TA = −40°

25°

75° 125° 150°

2

VGS(off) - Gate Cut-off Voltage - V

-50 -25 0 25 50 75 100 125 150 175

T

ch - Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

500

VGS = 10 V

450

Pulsed

400

350

300

250

200

150

100

50

0

RDS(on) - Drain to Source On-state Resistance - m

1 10 100

I

D - Drain Current - A

0.01

0.01 0.1 1 10 100

| yfs | - Forward Transfer Admittance - S

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

I

D - Drain Current - A

400

Pulsed

350

300

ID = 20 A

10 A

250

4 A

200

150

100

50

0

RDS(on) - Drain to Source On-state Resistance - mΩ

3456789101112

V

GS - Gate to Source Voltage - V

4

Data Sheet D16913EJ1V0DS

Ω

s

r

f

2SK3740

RDS(on) - Drain to Source On-state Resistance - m

1000

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

350

VGS = 10 V

300

Pulsed

250

200

150

ID = 20 A

10 A

100

50

0

-50 -25 0 25 50 75 100 125 150 175

T

ch - Channel Temperature - °C

SWITCHING CHARACTERISTICS

VDD = 125 V

GS

= 10 V

V

G

= 0

R

Ω

100

10

t

d(on)

t

d(off)

t

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

VGS = 0 V f = 1.0 MHz

C

1000

100

C

10

Ciss, Coss, Crss - Capacitance - pF

0.1 1 10 100 1000

V

DS - Drain to Source Voltage - V

is

C

os

rs

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

350

14

ID = 20 A

300

12

VDD = 200 V

250

125 V

10

50 V

200

150

100

50

GS

V

DS

V

8

6

4

2

1

td(on), tr, td(off), tf - Switching Time - ns

0.1 1 10 100

I

D - Drain Current - A

0

VDS - Drain to Source Voltage - V

0 1020304050

QG - Gate Charge - nC

0

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

100

Pulsed

1000

VGS = 0 V di/dt = 100 A/µs

10

VGS = 10 V

1

100

0 V

0.1

IF - Diode Forward Current - A

0.01

00.511.5

V

F(S-D) - Source to Drain Voltage - V

10

trr - Reverse Recovery Time - ns

0.1 1 10 100

I

F - Diode Forward Current - A

VGS - Gate to Source Voltage - V

Data Sheet D16913EJ1V0DS

5

C

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

100

IAS = 20 A

10

EAS = 40 mJ

VDD = 125 V

= 25

R

G

Ω

= 20 → 0 V

V

GS

Starting T

= 25°

ch

1

IAS - Single Avalanche Current - A

0.01 0.1 1 10

L - Inductive Load - mH

SINGLE AVALANCHE ENERGY

DERATING FACTOR

100

80

60

40

20

0

Energy Derating Factor - %

25 50 75 100 125 150

Starting T

ch - Starting Channel Temperature - °C

VDD = 125 V

G

= 25

R V I

GS

= 20 →0 V

AS

≤ 20 A

Ω

2SK3740

6

Data Sheet D16913EJ1V0DS

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZK)

2SK3740

No plating

10.0±0.3

7.88 MIN.

4

8.0 TYP.

0.75±0.2

2.54

123

EQUIVALENT CIRCUIT

Drain

Body

Gate

Diode

1.35±0.3

9.15±0.3

2.5

15.25±0.5

0.5±0.2

4.45±0.2

0.025 to

0.25

0 to 8

o

0.25

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.54±0.25

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D16913EJ1V0DS

7

2SK3740

•

The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

•

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.

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purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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M8E 02. 11-1