NEC 2sk3668 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

2SK3668

DESCRIPTION

The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
excellent switching characteristics, designed for high
voltage applications such as high intens ity disch arge
lamp drive.

FEATURES

• Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)

• Gate voltage rating: ±30 V

• Low on-state resistance

= 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A)

DS(on)

R

• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS
Drain Current (DC) (TC
Drain Current (pulse)
Total Power Dissipation (TA
Total Power Dissipation (TC
Channel Temperature Tch
Storage Temperature Tstg
Single Avalanche Current

★★★★

Single Avalanche Energy

= 0 V) V

= 25°C) I

Note1

= 25°C) P
= 25°C) P

Note2

Note2

DSS

GSS

D(DC)

I

D(pulse)

T1

T2

I

AS

E

AS

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3668-ZK TO-263 (MP-25ZK)

(TO-263)

400 V
±30 V
±10 A
±34 A

1.5 W
100 W
150 °C

–55 to +150 °C

10 A

8mJ

s, Duty Cycle ≤ 1%

Notes 1. PW ≤ 10

★★★★

2. Starting T

µ

= 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH

ch

THERMAL RESISTANCE

Channel to Case Thermal Resistance R
Channel to Ambient Thermal Resistane Rth(ch-A)

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan

The mark ★★★★ shows major revised points.

th(ch-C)

1.25 °C/W

83.3 °C/W

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3668

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

★★★★

Forward Transfer Admittance

★★★★

Drain to Source On-state Resistance

Note

Note

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage

Note

Reverse Recovery Time t
Reverse Recovery Charge Q

VDS = 400 V, VGS = 0 V 100

DSS

VGS = ±30 V, VDS = 0 V ±100 nA

GSS

GS(off)VDS

= 10 V, ID = 1.0 mA 2.5 3.5 V

| yfs |VDS = 10 V, ID = 5.0 A 3.0 5.6 S

R

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

V

F(S-D)IF

rr

rr

= 10 V, ID = 5.0 A 0.40 0.55 Ω
VDS = 10 V 1320 pF
VGS = 0 V 230 pF
f = 1.0 MHz 13 pF
VDD = 150 V, ID = 5.0 A 18 ns
VGS = 10 V 8 ns
RG = 10 Ω 44 ns

4ns
VDD = 320 V 26 nC
VGS = 10 V 7 nC
ID = 10 A 11 nC

= 10 A, VGS = 0 V 0.90 V
IF = 10 A, VGS = 0 V 350 ns
di/dt = 100 A/µs2.7

A

µ

C

µ

Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2%

Note

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

VDD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

IAS

ID

V

DD

VDS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

RL

VDD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

L

R

PG.

V

GS

0

τ = 1 s

Duty Cycle ≤ 1%

G

VDD

τ

µ

V

GS

Wave Form

ID

Wave Form

VGS

ID

10%

0

90%

10%

0

t

d(on)

r

t

on

t

VGS

ID

t

d(off)

t

90%

off

90%

t

10%

f

2

Data Sheet D16547EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3668

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

dT - Percentage of Rated Power - %

0

0 25 50 75 100 125 150 175

TC - Case Temperature - °C

★★★★

FORWARD BIAS SAFE OPERATING AREA

100

D(DC)

I

Limited

= 10 V)

= 10 A

DC

DS(on)

10

R

GS

(at V

1

PW = 1 ms

10 ms

100 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

120

100

80

60

40

- Total Power Dissipation - W

20

T

P

0

0 25 50 75 100 125 150 175

TC - Case Temperature - °C

- Drain Current - A

D

I

0.1

TC = 25°C
Single pulse

0.01

0.1 1 10 100 1000

Power Dissipation Limited

VDS - Drain to Source Voltage - V

★★★★

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

- Transient Thermal Resistance - °C/W

th(t)

R

0.001

100

1 m 10 m 100 m 1 10 100 1000

µ

PW - Pulse Width - s

R

R

th(ch-A)

th(ch-C)

= 83 .3°C/W

= 1.2 5°C/W

Sin g le puls e
R

: TA = 25°C

th(ch-A)
th(ch-C)

R

: TC = 25°C

Data Sheet D16547EJ2V0DS

3

2SK3668

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

40

35

30

25

20

15

- Drain Current - A

D

I

10

5

0

0 5 10 15 20 25 30

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

4.0

3.5

3.0

2.5

- Gate Cut-off Voltage - V

2.0

GS(off)

V

1.5

- 25 0 25 50 75 100 125 150

Tch - Channel Temperature - °C

VGS = 20 V

10 V

Pulsed

VDS = 10 V

D

I

= 1 mA

FORWARD TRANSFER CHARACTERISTICS

100

VDS = 10 V
Pulsed

10

1

TA = 150°C

0.1

0.01

- Drain Current - A

D

I

0.001

0.0001
0 5 10 15

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

VDS = 10 V
Pulsed

TA = 150°C

10

125°C

75°C
25°C

−

25°C

1

0.1

| - Forward Transfer Admittance - S

fs

| y

0.01

0.01 0.1 1 10 100

ID - Drain Current - A

125°C

75°C
25°C

−

25°C

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
DRAIN CURRENT

2

VGS = 10 V
Pulsed

1.5

1

0.5

- Drain to Source On-state Resistance - Ω

0

DS(on)

0.01 0.1 1 10 100

R

ID - Drain Current - A

4

- Drain to Source On-state Resistance - Ω

DS(on)

R

Data Sheet D16547EJ2V0DS

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
GATE TO SOURCE VOLTAGE

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

0 2 4 6 8 101214161820

ID = 10 A

5.0 A

2.0 A

Pulsed

VGS - Gate to Source Voltage - V

A

V

2SK3668

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
CHANNEL TEMPERATURE

1.4
VGS = 10 V

Pulsed

1.2

1

0.8

0.6

0.4

0.2

ID = 10 A

- Drain to Source On-state Resistance - Ω

0

DS(on)

- 25 0 25 50 75 100 125 150

R

Tch - Channel Temperature - °C

SWITCHING CHARACTERISTICS

1000

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

d(on)

t

d(off)

t

f

t

d(on)

t

10

1

0

0.1 1 10 100

r

t

VDD = 150 V

GS

V

G

R

= 10

ID - Drain Current - A

5.0 A

= 10 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

0000

iss

1000

100

- Capacitance - pF

rss

, C

oss

10

, C

iss

C

VGS = 0
f = 1.0 MHz

1

0.01 0.1 1 10 100 1000

C

oss

C

rss

C

VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

400

Ω

350

300

250

200

150

100

- Drain to Source Voltage - V

DS

50

V

0

0 5 10 15 20 25 30

VDD = 320 V

200 V
100 V

DS

V

ID = 10

GS

V

16

14

12

10

8

6

4

- Gate to Source Voltage - V

GS

V

2

0

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

Pulsed

10

VGS = 10 V

1

0.1

- Diode Forward Current - A

F

I

0.01

00.511.5

V

- Source to Drain Voltage - V

F(S-D)

0

Data Sheet D16547EJ2V0DS

000

100

10

- Reverse Recovery Ti me - ns

rr

t

1

REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT

di/dt = 100 A/µs

GS

= 0 V

V

0.1 1 10 100

IF - Diode Forward Current - A

5

100

★★★★

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

IAS = 10 A

10

VDD = 150 V
VGS = 20 → 0 V

Ω

RG = 25

EAS = 8.0 mJ

100

2SK3668

SINGLE AVALANCHE ENERGY
DERATING FACTOR

VDD = 150 V

G

Ω

R

= 25

GS

= 20 → 0V

80

60

V

AS

I

≤ 10 A

- Single Avalanche Current - A

AS

I

0.1

1

100

40

20

Energy Derating Factor - %

0

µ

1 m 10 m 100 m

L - Inductive Load - H

25 50 75 100 125 150

Starting Tch - Starting Channel Temperature - °C

6

Data Sheet D16547EJ2V0DS

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZK)

2SK3668

No plating

10.0±0.3

7.88 MIN.

4

8.0 TYP.

0.75±0.2

2.54

123

EQUIVALENT CIRCUIT

Drain

Gate

Body
Diode

1.35±0.3

9.15±0.3

2.5

15.25±0.5

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.45±0.2

0.025 to

0.25

0 to 8

0.25

1.3±0.2

2.54±0.25

o

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

Data Sheet D16547EJ2V0DS

7

2SK3668

•

The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

•

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appear in this document.

•

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•

purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 02. 11-1