Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
2SK3664
DESCRIPTION
The 2SK3664 is a switching device, which can be driven directly
by a 2.5 V power source.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
3
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A)
DS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A)
R
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3664 SC-75 (USM)
Marking: G1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Channel Temperature T
Storage Temperature T
Notes 1. PW ≤ 10
2. Mounted on ceramic substrate of 300 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
V
ESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
DS = 0 V) VGSS ±12 V
D(DC) ±0.5 A
Note1
Note2
µ
s, Duty Cycle ≤ 1%
D(pulse) ±2.0 A
I
T 0.2 W
P
ch 150 °C
stg −55 to +150 °C
2
x 0.64 mm
0.8 ± 0.1
1.6 ± 0.1
2
0.2
0.5
1.6 ± 0.1
+0.1
–0
1.0
1
0.5
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.6
0.75 ± 0.05
1: Source
2: Gate
3: Drain
Drain
Body
Diode
Source
0.15
+0.1
–0.05
0 to 0.1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3664
Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1.0
µ
A
Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V
Forward Transfer Admittance
Drain to Source On-state Resistance
RDS(on)2 VGS = 4.0 V, ID = 0.3 A 0.41 0.60
RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88
Note
| yfs | VDS = 10 V, ID = 0.3 A 0.25 0.75 S
Note
RDS(on)1 VGS = 4.5 V, ID = 0.3 A 0.38 0.57
Ω
Ω
Ω
Input Capacitance Ciss VDS = 10 V 28 pF
Output Capacitance Coss VGS = 0 V 11 pF
Reverse Transfer Capacitance Crss f = 1 MHz 7.0 pF
Turn-on Delay Time td(on) VDD = 10 V, ID = 0.30 A 20 ns
Rise Time tr VGS = 4.0 V 51 ns
Turn-off Delay Time td(off) RG = 10 Ω 94 ns
Fall Time tf 87 ns
Body Diode Forward Voltage
Note
VF(S-D) IF = 0.5 A, VGS = 0 V 0.87 V
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
V
GS
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1%
R
G
D.U.T.
V
L
R
V
Wave Form
V
DD
V
Wave Form
GS
GS
DS
10%
0
V
DS
90%
V
DS
0
t
d(on)
10% 10%
trt
t
on
V
GS
d(off)tf
t
90%
90%
off
2
Data Sheet D16599EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
V
V
V
A
V
V
C
C
TOTAL POWER DISSIPATION vs.
240
200
AMBIENT TEMPERATURE
Mounted on ceramic substrate
of 3.0 cm2 x 0.64 mm
2SK3664
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.6
2
Pulsed
VGS= 4.5
4.0
160
120
80
40
30
0 60 90 120 150
PT - Total Power Dissipation - mW
T
A - Ambient Temperature - °C
180 210
1.2
0.8
0.4
ID - Drain Current - A
0
0 0.4 0.8 1.2 1.6
V
DS - Drain to Source Voltage - V
2.5
FORWARD TRANSFER CHARACTERISTICS GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.1
0.01
0.001
10
1
VDS = 10 V
Pulsed
TA = 125°C
75°C
25°C
−25°C
1.4
1.2
0.8
0.6
VDS = 10 V
D
I
= 1.0 m
1
ID - Drain Current - A
0.0001
0 0.5 1 1.5 2 2.5 3
V
GS - Gate to Source Voltage - V
VGS(off) - Gate Cut-off Voltage - V
0.4
-50 0 50 100 150
T
ch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10
Pulsed
TA = −25°C
25°C
75°C
125°C
I
D - Drain Current - A
| yfs | - Forward Transfer Admittance - S
1
0.1
0.01
0.001 0.01 0.1 1 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS= 4.5
Pulsed
1
0.8
TA = 125°C
0.6
0.4
0.2
0
RDS(on) - Drain to Source On-state Resistance - Ω
0.01 0.1 1 10
75°C
25
°
−25°
I
D - Drain Current - A
Data Sheet D16599EJ2V0DS
3
Page 4
V
C
C
C
C
V
C
C
C
C
A
A
A
A
z
V
ftr
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.0
Pulsed
1
TA = 125
0.8
0.6
°
75°
2SK3664
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
0.8
0.6
1
VGS= 2.5
Pulsed
TA = 125
°
75
°
0.4
25
0.2
0
0.01 0.1 1 10
RDS(on) - Drain to Source On-state Resistance - Ω
I
°
−25°
D - Drain Current - A
0.4
0.2
0
0.01 0.1 1 10
RDS(on) - Drain to Source On-state Resistance - Ω
25°
−25°
I
D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
Pulsed
1
0.8
0.6
0.4
0.2
0
RDS(on) - Drain to Source On-state Resistance - Ω
024681012
V
GS - Gate to Source Voltage - V
ID = 0.3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
Pulsed
1
0.8
0.6
0.4
0.2
RDS(on) - Drain to Source On-state Resistance - Ω
VGS = 2. 5 V, ID = 0.15
VGS = 4.0 V, ID = 0. 3
VGS = 4.5 V, ID = 0. 3
0
-50 0 50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
10
VGS = 0 V
f = 1.0 MH
iss
C
oss
C
rss
C
Ciss, Coss, Crss - Capacitance - pF
1
0.1 1 10 100
V
DS - Drain to Source Voltage - V
4
Data Sheet D16599EJ2V0DS
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
1000
d(off)
t
100
t
d(on)
t
10
0.01 0.1 1 10
I
D - Drain Current - A
VDD = 10 V
GS
V
= 4.0
RG = 10 Ω
Page 5
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
2SK3664
IF - Diode Forward Current - A
10
Pulsed
1
0.1
0.01
0.001
0.4 0.6 0.8 1 1.2 1.4
V
F(S-D) - Source to Drain Voltage - V
VGS = 0
Data Sheet D16599EJ2V0DS
5
Page 6
2SK3664
•
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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•
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M8E 02. 11-1
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