NEC 2sk3663 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SK3663

DESCRIPTION

The 2SK3663 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

= 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)

DS(on)1

R
R

= 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)

DS(on)2

R

= 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)

DS(on)3

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3663 SC-70 (SSP)

Remark Marking : G26

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS

= 0 V) V

DSS

GSS

Drain Current (DC) ID (DC)
Drain Current (pulse)
Total Power Dissipation

Note1

Note2

I

D (pulse)

P

T

Channel Temperature Tch
Storage Temperature Tstg −55 to +150 °C

s, Duty Cycle ≤ 1%

Notes 1. PW ≤ 10

2. Mounted on FR-4 board of 2500 mm

µ

2

x 1.1 mm

20 V

±12 V
±0.5 A
±2.0 A

0.2 W

150 °C

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D16529EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan

2003

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3663

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance

Note

Note

Note

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Body Diode Forward Voltage V

Pulsed : PW≤350 µs, Duty Cycle≤2%

Note

TEST CIRCUIT SWITCHING TIME

DSS

VDS = 20 V, VGS = 0 V 1.0

GSS

VGS = ±12 V, VDS = 0 V ±10

GS(off)VDS

V

= 10 V, ID = 1.0 mA 0.5 1.0 1.5 V

| yfs |VDS = 10 V, ID = 0.30 A 0.25 0.75 S

DS(on)1VGS

R

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d off)

f

F(S-D)IF

= 4.5 V, ID = 0.30 A 0.38 0.57 Ω
= 4.0 V, ID = 0.30 A 0.41 0.60 Ω

= 2.5 V, ID = 0.15 A 0.60 0.88 Ω
VDS = 10 V 28 pF
VGS = 0 V 11 pF
f = 1.0 MHz 7 pF
VDD = 10 V, ID = 0.30 A 20 ns
VGS = 4.0 V 51 ns
RG = 10 Ω 94 ns

87 ns

= 0.5 A, VGS = 0 V 0.87 V

A

µ

A

µ

PG.

V

GS

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1%

R

G

D.U.T.

V

R

L

V

Wave Form

V

DD

V

Wave Form

GS

GS

DS

10%

0

V

DS

90%

V

DS

0

t

d(on)

10% 10%

trt

t

on

V

GS

d(off)tf

t

90%

90%

off

2

Data Sheet D16529EJ1V0DS

f

2SK3663

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

0

0 25 50 75 100 125 150 175

TA - Ambient Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

2

Pulsed

VGS = 4.5 V

1.6

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

0.24

0.2

0.16

0.12

0.08

- Total Power Dissipation - W

T

P

Mounted on FR-4 board o
2500 mm2 x 1.1 mm

0.04

0

0 25 50 75 100 125 150 175

TA - Ambient Temperature - °C

FORWARD TRANSFER CHARACTERISTI CS

10

VDS = 10 V

Pulsed

1

- Drain Current - A

D

I

-Gate Cut-off Voltage - V

GS(off)

V

4.0 V

1.2

0.8

0.4

0

0 0.4 0.8 1.2 1.6

2.5 V

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

1.4
VDS = 10 V
I

= 1.0 mA

D

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

Tch - Channel Temperature - °C

- Drain Current - A

D

I

| - Forward Transfer Admittance - S

fs

| y

0.1

0.01

0.001

0.0001

00.511.522.53

TA = 125°C

75°C
25°C

−25°C

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

V

= 10 V

DS

Pulsed

TA = −25°C

1

0.1

0.01

0.001 0.01 0.1 1 10

25°C

75°C

125°C

ID - Drain Current - A

Data Sheet D16529EJ1V0DS

3

2SK3663

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
CHANNEL TEMPERATURE

1.2
Pulsed

1

0.8

0.6

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

-50 0 50 100 150

VGS = 2.5 V, ID = 0.15 A

VGS = 4.0 V, ID = 0.30 A
VGS = 4.5 V, ID = 0.30 A

Tch - Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
DRAIN CURRENT

1.2
VGS = 4.5 V

Pulsed

1

0.8

0.6

TA = 125°C

75°C

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
GATE TO SOURCE VOLTAGE

1.2
ID = 0.30 A

Pulsed

1

0.8

0.6

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

024681012

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
DRAIN CURRENT

1.2
VGS = 4.0 V

Pulsed

1

0.8

0.6

TA = 125°C

75°C

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

0.01 0.1 1 10

DS(on)

R

25°C

−

25°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTA NCE vs.
DRAIN CURRENT

1.2
VGS = 2.5 V

Pulsed

1

TA = 125°C

75°

0.8

0.6

0.4

0.2

−

25°C

25°C

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

0.01 0.1 1 10

ID - Drain Current - A

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

0.01 0.1 1 10

DS(on)

R

25°C

−25°C

ID - Drain Current - A

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

100

VGS = 0 V
f = 1.0 MHz

10

- Capacitance - pF

rss

, C

oss

, C

iss

C

1

0.1 1 10 100

VDS - Drain to Source Voltage - V

iss

C

oss

C

rss

C

4

Data Sheet D16529EJ1V0DS

2SK3663

SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000

VDD = 10 V
VGS = 4.0 V

Ω

G

R

= 10

d(off)

t

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

d(on)

t

10

0.01 0.1 1 10

t

t

f

d(on)

r

t

ID - Drain Current - A

10

VGS = 0 V
Pulsed

1

0.1

0.01

– Diode Forward Current - A

F

I

0.001

0.4 0.6 0.8 1 1.2 1.4

F (S-D)

V

- Source to Drain Voltage - V

Data Sheet D16529EJ1V0DS

5

2SK3663

•

The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

•

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appear in this document.

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M8E 02. 11-1