NEC 2sk3484 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3484 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low on-state resistance

DS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A)

R

DS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)

R

• Low C

• Built-in gate protection diode

• TO-251/TO-252 package

iss: Ciss = 900 pF TYP.

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (VGS = 0 V) VDSS 100 V

Gate to Source Voltage (VDS = 0 V) VGSS ±20 V

Drain Current (DC) (TC = 25°C) ID(DC) ±16 A

Drain Current (pulse)

Total Power Dissipation (TC = 25°C) PT1 30 W

Total Power Dissipation (TA = 25°C) PT2 1.0 W

Channel Temperature T

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T

Note1

Note2

ch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V

A = 25°C)

ID(pulse) ±22 A

ch 150 °C

I

AS 10 A

EAS 10 mJ

THERMAL RESISTANCE

Channel to Case Thermal Resistance Rth(ch-C) 4.17 °C/W

Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3484 TO-251 (MP-3)

2SK3484-Z TO-252 (MP-3Z)

2SK3484

(TO-251)

(TO-252)

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D15069EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan

The mark shows major revised points.

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3484

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10

µ

A

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

| y

fs | VDS = 10 V, ID = 8 A 4.7 9.5 S

R

DS(on)1 VGS = 10 V, ID = 8 A 100 125 mΩ

RDS(on)2 VGS = 4.5 V, ID = 8 A 110 148 mΩ

Input Capacitance Ciss VDS = 10 V 900 pF

Output Capacitance Coss VGS = 0 V 110 pF

Reverse Transfer Capacitance Crss f = 1 MHz 50 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 8 A 9.0 ns

Rise Time tr VGS = 10 V 5.0 ns

Turn-off Delay Time td(off) RG = 0 Ω 30 ns

Fall Time tf 4.0 ns

Total Gate Charge QG VDD = 80 V 20 nC

Gate to Source Charge QGS VGS = 10 V 3.0 nC

Gate to Drain Charge QGD ID = 16 A 5.0 nC

Body Diode Forward Voltage

Note

V

F(S-D) IF = 16 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 16 A, VGS = 0 V 60 ns

Reverse Recovery Charge Qrr di/dt = 100 A/ µs 122 nC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

RG = 25 Ω

PG.

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

I

D

V

DD

Starting T

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

L

V

DD

V

DS

ch

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10%

0

I

D

10%

0

t

d(on)trtd(off)

90%

t

on

90%

V

GS

90%

I

D

10%

t

f

t

off

2

Data Sheet D15069EJ2V0DS

2SK3484

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

120

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

50

100

40

80

30

60

20

40

10

20

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

C - Case Temperature -

T

˚C

- Total Power Dissipation - W

T

P

0

08020 40 60 100 140120 160

TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

I

D(DC)

DC

Limited

D(pulse)

Power Dissipation

10 ms

10 µs

100 µs

1 ms

10

Limited

= 10 V)

GS

DS(on)

R

(at V

1

- Drain Current - A

D

I

TC = 25˚C Single Pulse

0.1

1 10 100

V

DS

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

R

th(ch-A)

100

= 125˚C/W

10

R

th(ch-C)

= 4.17˚C/W

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.01

µ

10

100

1 m 10 m 100 m 1 10 100 1000

µ

Single Pulse

PW - Pulse Width - s

Data Sheet D15069EJ2V0DS

3

2SK3484

FORWARD TRANSFER CHARACTERISTICS

100

Pulsed V

DS

= 10 V

10

25

20

15

1

- Drain Current - A

D

1

0.1

I

TA = −40˚C

25˚C 75˚C

150˚C

10

- Drain Current - A

D

I

5

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

GS

=10 V

4.5 V

0.01 1234

V

GS

- Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100

DS = 10 V

V

5

0

V

DS

- Drain to Source Voltage - V

23410

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

200

Pulsed

10

TA = 150˚C

1

75˚C 25˚C

−40˚C

0.1

0.01

| yfs | - Forward Transfer Admittance - S

0.01 0.1

I

D - Drain Current - A

1

10 100

150

100

- Drain to Source On-state Resistance - mΩ

DS(on)

R

50

ID = 16 A

0

5101520

GS

- Gate to Source Voltage - V

V

Pulsed

8 A

250

200

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

Pulsed

4

3

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

VDS = 10 V

D

= 1 mA

I

150

V

GS

= 4.5 V

100

10 V

50

- Drain to Source On-state Resistance - mΩ

0

DS(on)

R

4

10.1

D

- Drain Current - A

I

10 100

Data Sheet D15069EJ2V0DS

2

1

- Gate Cut-off Voltage - V

GS(off)

V

0

−50

0 50 100 150

ch

- Channel Temperature - ˚C

T

2SK3484

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

300

Pulsed

D

= 8 A

I

100

10

200

V

GS

= 4.5 V

10 V

1

100

0.1

- Diode Forward Current - A

SD

I

- Drain to Source On-state Resistance - mΩ

0

−50

DS(on)

R

0

T

ch

- Channel Temperature - ˚C

50

100 150

0.01

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

Pulsed

V

GS

= 10 V

0 V

0 1.5

0.5

1

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

VGS = 0 V

1000

f = 1 MHz

C

= 0 V

iss

C

oss

C

rss

µ

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

d(on)

t

100

1000

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

10

0.01 0.1

1000

1 10 100

V

DS

- Drain to Source Voltage - V

REVERSE RECOVERY TIME vs. DRAIN CURRENT

di/dt = 100 A/ s

GS

V

80

100

60

SWITCHING CHARACTERISTICS

VDD = 50 V VGS = 10 V R

G

= 0 Ω

t

f

t

d(off)

t

10

t

r

1

10.1

I

D

- Drain Current - A

d(on)

10 100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VDD = 80 V

50 V 20 V

VGS

10

8

6

10

- Reverse Recovery Time - ns

rr

t

1

0.1

1 10 100

I

F

- Drain Current - A

40

20

VDS - Drain to Source Voltage - V

Data Sheet D15069EJ2V0DS

4

2

V

DS

D = 16 A

0

510152025

I

VGS - Gate to Drain Voltage - V

0

QG - Gate Charge - nC

5

2SK3484

100

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

IAS = 10 A

10

E

SINGLE AVALANCHE ENERGY DERATING FACTOR

160

140

120

AS

=

10

mJ

100

80

VDD = 50 V R

G

= 25 Ω

V

GS

= 20 → 0 V

AS

≤ 10 A

I

1

VDD = 50 V R

G = 25 Ω

GS = 20

→

V

IAS - Single Avalanche Current - A

Startimg T

0.1

0 V

ch = 25

˚C

0.01 0.1

L - Inductive Load - mH

60

40

Energy Derating Factor - %

20

1

10

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

125 150

6

Data Sheet D15069EJ2V0DS

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

2SK3484

6.5 ±0.2

5.0 ±0.2

4

1.6 ±0.2

213

1.1 ±0.2

2.32.3

EQUIVALENT CIRCUIT

Drain

Body

Gate

Diode

+0.2

1.5 −0.1

5.5 ±0.27.0 MIN.

+0.2

−0.1

0.5

0.75

2.3 ±0.2

13.7 MIN.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.5 ±0.1

+0.2

−0.1

0.5

+0.2

4

2.0

MAX.

−0.1

2.3 ±0.2

1.5

5.5 ±0.2

10.0 MAX.

MIN.

0.9

0.8

MAX.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.8

0.5 ±0.1

1.0 MIN.

1.8TYP.

0.7

4.3 MAX.0.8

1.1 ±0.2

6.5 ±0.2

5.0 ±0.2

123

2.3 2.3

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D15069EJ2V0DS

7

2SK3484

•

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

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purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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M8E 02. 11-1