Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
DS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)
R
DS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A)
R
• Low C
• Built-in gate protection diode
• TO-251/TO-252 package
iss: Ciss = 2300 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (VGS = 0V) VDSS 100 V
Gate to Source Voltage (VDS = 0V) VGSS ±20 V
Drain Current (DC) ID(DC) ±28 A
Drain Current (Pulse)
Total Power Dissipation (TC = 25°C) PT 40 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting T
Note1
Note2
Note2
ch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
A = 25°C)
D(pulse) ±60 A
I
ch 150 °C
AS 25 A
I
AS 62.5 mJ
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3483 TO-251 (MP-3)
2SK3483-Z TO-252 (MP-3Z)
2SK3483
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3483
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
Note
| y
fs | VDS = 10 V, ID = 14 A 9.0 18 S
R
DS(on)1 VGS = 10 V, ID = 14 A 41 52 mΩ
RDS(on)2 VGS = 4.5 V, ID = 14 A 45 59 mΩ
Input Capacitance Ciss VDS = 10 V 2300 pF
Output Capacitance Coss VGS = 0 V 230 pF
Reverse Transfer Capacitance Crss f = 1 MHz 120 pF
Turn-on Delay Time td(on) VDD = 50 V, ID = 14 A 12 ns
Rise Time tr VGS = 10 V 9 ns
Turn-off Delay Time td(off) RG = 0 Ω 53 ns
Fall Time tf 5 ns
Total Gate Charge QG VDD = 80 V 49 nC
Gate to Source Charge QGS VGS = 10 V 7 nC
Gate to Drain Charge QGD ID = 28 A 13 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 28 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 28 A, VGS = 0 V 73 ns
Reverse Recovery Charge Qrr di/dt = 100 A/µs 175 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
G
= 25 Ω
R
PG.
50 Ω
VGS = 20 → 0 V
BV
DSS
I
AS
I
D
V
DD
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G
= 2 mA
I
PG.
50 Ω
V
DS
Starting T
L
R
V
DD
L
V
DD
ch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
µ
τ = 1 s
Duty Cycle ≤ 1%
G
V
V
GS
Wave Form
V
DS
Wave Form
GS
10%
0
V
DS
90%
V
DS
0
10% 10%
t
d(on)trtd(off)tf
t
on
90%
V
GS
90%
t
off
L
R
V
DD
2
Data Sheet D15068EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
p
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
dT - Percentage of Rated Power - %
0
0 25 50 75 100 125 150 175
T
FORWARD BIAS SAFE OPERATING AREA
1000
C - Case Temperature - °C TC - Case Temperature - °C
2SK3483
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
45
40
35
30
ation - W
25
20
15
10
5
0
0 25 50 75 100 125 150 175
PT - Total Power Dissi
100
DS(on)
R
(at V
10
1
ID - Drain Current - A
C
= 25˚C
T
Single Pulse
0.1
0.1
I
D(pulse)
= 60 A
PW = 10
10 ms
1 ms
100 µs
µs
1000
Limited
= 10 V)
GS
DC
Power Dissipation
= 28 A
Limited
I
D(DC)
1 10 100
DS - Drain to Source Voltage - V
V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Channel to Ambient
10
Channel to Case
1
R
R
th(ch-A)
th(ch-C)
= 125˚C/W
= 3.13˚C/W
0.1
Single Pulse
0.01
rth(t) - Transient Thermal Resistance - °C/W
10
µ
100
1 m 10 m 100 m 1 10 100 1000
µ
PW - Pulse Width - s
Data Sheet D15068EJ2V0DS
3
Page 4
|
y
|
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
VGS = 10 V
40
4.5 V
30
20
ID - Drain Current - A
10
0
0.0 1.0 2.0 3.0 4.0 5.0
V
DS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V
Pulsed
2SK3483
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = 150°C
75°C
1
25°C
-40°C
0.1
ID - Drain Current - A
0.01
0.001
012345
VDS = 10 V
Pulsed
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
VSD = 10 V
D = 1 mA
3.5
I
3.0
2.5
2.0
1.5
1.0
0.5
VGS(off) – Gate Cut-off Voltage - V
0.0
-50 -25 0 25 50 75 100 125 150 175
T
ch - Channel Temperature - °C ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
90
80
70
60
50
VGS = 4.5 V
40
30
10 V
20
10
0
RDS(on) - Drain to Source On-state Resistance - mΩ
0.1 1 10 100
ID - Drain Current - A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -40°C
10
1
0.1
- Forward Transfer Admittance - S
0.01
fs
0.01 0.1 1 10 100
25°C
75°C
150°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
70
60
ID = 28 A
14A
50
40
30
5.6 A
20
10
0
RDS(on) - Drain to Source On-state Resistance - mΩ
0 2 4 6 8 101214161820
VGS - Gate to Source Voltage - V
VDS = 10 V
Pulsed
Pulsed
4
Data Sheet D15068EJ2V0DS
Page 5
2SK3483
-
-
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
Pulsed
100
80
VGS = 4.5 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
VGS = 0 V
f = 1MH z
60
10 V
40
20
0
RDS(on) - Drain to Source On-state Resistance - mΩ
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
100
Ciss, Coss, Crss - Capacitance - pF
10
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
Crss
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
td(off)
VDD = 50 V
= 10 V
V
GS
R
G = 0 Ω
100
90
80
70
60
ID = 28 A
VDD = 80 V
50 V
20 V
V
GS
10
8
6
50
t
d(on)
10
tr
td(on), tr, td(off), tf - Switching Time - ns
tf
1
0.1 1 10 100
ID - Drain Current - A QG - Gate Charge - nC
40
30
20
10
VDS - Drain to Source Voltage - V
V
DS
0
0 5 10 15 20 25 30 35 40 45 50
4
2
0
VGS - Gate to Drain Voltage - V
SOURCE TO DRAIN DIODE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
FORWARD VOLTAGE
1000
100
A
VGS = 10 V
10
1
Diode Forward Current
0.1
Pulsed
0 V
ISD
0.01
0.0 0.5 1.0 1.5
V
SD - Source to Drain Voltage - V IF - Drain Current - A
Data Sheet D15068EJ2V0DS
1000
di/dt = 100 A/µs
= 0 V
V
GS
100
10
trr - Reverse Recovery Time - ns
1
0.1 1 10 100
5
Page 6
SINGLE AVALANCHE CURRENT vs.
SINGLE AVALANCHE ENERGY
INDUCTIVE LOAD
1000
VDD = 50 V
GS = 20
V
R
G= 25
Starting T
100
IAS = 25 A
EAS = 62 .5 mJ
10
IAS - Single Avalanche Current - A
1
0.01 0.1 1 10
→
0 V
Ω
ch = 25°C
120
100
80
60
40
20
Energy Derating Factor - %
0
25 50 75 100 125 150 175
L - Inductive Load - mH Starting T
2SK3483
DERATING FACTOR
VDD = 50 V
GS
= 20 → 0 V
V
Ω
G
R
= 25
AS
≤ 25 A
I
ch - Starting Channel Temperature - °C
6
Data Sheet D15068EJ2V0DS
Page 7
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
2SK3483
6.5 ±0.2
5.0 ±0.2
4
1.6 ±0.2
213
1.1 ±0.2
2.32.3
EQUIVALENT CIRCUIT
Drain
Body
Gate
Diode
+0.2
1.5 −0.1
5.5 ±0.27.0 MIN.
+0.2
−0.1
0.5
0.75
2.3 ±0.2
13.7 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.5 ±0.1
+0.2
−0.1
0.5
+0.2
4
2.0
MAX.
−0.1
2.3 ±0.2
1.5
5.5 ±0.2
10.0 MAX.
MIN.
0.9
0.8
MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.8
0.5 ±0.1
1.0 MIN.
1.8TYP.
0.7
4.3 MAX.0.8
1.1 ±0.2
6.5 ±0.2
5.0 ±0.2
123
2.3 2.3
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D15068EJ2V0DS
7
Page 8
2SK3483
•
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
•
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M8E 02. 11-1
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