NEC 2sk3482 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3482 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low on-state resistance

DS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)

R

DS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)

R

• Low C

• Built-in gate protection diode

• TO-251/TO-252 package

iss: Ciss = 3600 pF TYP.

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (VGS = 0 V) VDSS 100 V

Gate to Source Voltage (VDS = 0 V) VGSS ±20 V

Drain Current (DC) ID(DC) ±36 A

Drain Current (Pulse)

Total Power Dissipation (TC = 25°C) PT 50 W

Total Power Dissipation (TA = 25°C) PT 1.0 W

Channel Temperature T

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T

Note1

Note2

ch = 25°C, RG = 25 Ω, VGS = 20 → 0 V

A = 25°C)

D(pulse) ±100 A

I

ch 150 °C

AS 30 A

I

AS 90 mJ

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3482 TO-251 (MP-3)

2SK3482-Z TO-252 (MP-3Z)

2SK3482

(TO-251)

(TO-252)

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

Document No. D15064EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan

The mark shows major revised points.

2001

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3482

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10

µ

A

Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

| y

fs | VDS = 10 V, ID = 18 A 12 23 S

R

DS(on)1 VGS = 10 V, ID = 18 A 27 33 mΩ

RDS(on)2 VGS = 4.5 V, ID = 18 A 29 39 mΩ

Input Capacitance Ciss VDS = 10 V 3600 pF

Output Capacitance Coss VGS = 0 V 360 pF

Reverse Transfer Capacitance Crss f = 1 MHz 190 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 18 A 15 ns

Rise Time tr VGS = 10 V 10 ns

Turn-off Delay Time td(off) RG = 0 Ω 68 ns

Fall Time tf 6 ns

Total Gate Charge QG VDD = 80 V 72 nC

Gate to Source Charge QGS VGS = 10 V 10 nC

Gate to Drain Charge QGD ID = 36 A 19 nC

Body Diode Forward Voltage

Note

V

F(S-D) IF = 36 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 36 A, VGS = 0 V 70 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 180 nC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10%

0

I

D

10%

0

t

d(on)trtd(off)

90%

t

on

90%

V

GS

90%

I

D

10%

t

f

t

off

2

Data Sheet D15064EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

p

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

120

2SK3482

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

60

100

80

ation - W

60

40

20

dT - Percentage of Rated Power - %

0

0 25 50 75 100 125 150 175

T

C - Case Temperature - °C TC - Case Temperature - °C

PT - Total Power Dissi

FORWARD BIAS SAFE OPERATING AREA

1000

100

Limited

= 10 V)

GS

DS(on)

R

(at V

I

10

1

ID - Drain Current - A

D(DC)

= 36 A

DC

I

D(pulse)

= 100 A

100 µs

1 ms

10 ms

Power Dissipation

Limited

PW = 10

µs

50

40

30

20

10

0

0 25 50 75 100 125 150 175

C

= 25˚C

T Single Pulse

0.1

V

1 10 100

DS - Drain to Source Voltage - V

1000

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

R

th(ch-A)

= 125˚C/W

Channel to Ambient

10

R

th(ch-C)

1

Channel to Case

= 2.5˚C/W

0.1

Single Pulse

0.01

rth(t) - Transient Thermal Resistance - °C/W

10

µ

100

1 m 10 m 100 m 1 10 100 1000

µ

PW - Pulse Width - s

Data Sheet D15064EJ2V0DS

3

C

|

y

|

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

90

80

70

60

VGS = 10 V

4.5 V

50

40

30

ID - Drain Current - A

20

10

0

012345

V

DS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

Pulsed

2SK3482

FORWARD TRANSFER CHARACTERISTICS

100

10

TA = 150°

1

0.1

ID - Drain Current - A

75°

-25°

-40°

VDS = 10 V Pulsed

0.01 012345

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

4.0

3.5

VSD = 10 V ID = 1mA

3.0

2.5

2.0

1.5

1.0

0.5

VGS(off) – Gate Cut-off Voltage - V

0.0

-50 -25 0 25 50 75 100 125 150

T

ch - Channel Temperature - °C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

70

Pulsed

60

50

40

30

20

V GS = 4.5V

10 V

10

0

RDS(on) - Drain to Source On-state Resistance - mΩ

0.1 1 10 100

ID - Drain Current - A

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

10

TA= 150°C

1

75°C

25°C

-40°C

0.1

- Forward Transfer Admittance - S

fs

0.01

0.01 0.1 1 10 100

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

50

45

40

35

ID = 36 A

18 A

30

25

20

7.2 A

15

10

5

0

RDS(on) - Drain to Source On-state Resistance - mΩ

0 2 4 6 8 101214161820

VGS - Gate to Source Voltage - V

VDS= 10V

Pulsed

4

Data Sheet D15064EJ2V0DS

g

-

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

2SK3482

CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

80

70

60

50

40

30

Pulsed

VGS = 4.5 V

10 V

10000

C

iss

C

oss

1000

C

rss

100

20

V

= 0 V

10

0

RDS(on) - Drain to Source On-state Resistance - mΩ

-50 -25 0 25 50 75 100 125 150

Tch - Channel Temperature - °C

Ciss, Coss, Crss - Capacitance - pF

10

0.01 0.1 1 10 100

VDS - Drain to Source Voltage - V

GS

f = 1 MHz

SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

tf

100

td(on)

10

tr

td(on), tr, td(off), tf - Switching Time - ns

1

0.1 1 10 100

td(off)

V V R

DD

= 50 V

GS

= 10 V

G = 0 Ω

100

90

80

I

D

= 36 A

V

= 80 V

DD

50 V 20 V

70

60

50

40

30

20

V

10

VDS - Drain to Source Voltage - V

DS

0

0 1020304050607080

10

V

GS

8

6

4

2

0

ID - Drain Current - A QG - Gate Charge - nC

e - V

VGS - Gate to Drain Volta

SOURCE TO DRAIN DIODE

REVERSE RECOVERY TIME vs. DRAIN CURRENT

FORWARD VOLTAGE

1000

100

di/dt = 100 A/µs

GS

V

= 0 V

A

100

10

VGS = 10 V

0 V

1

10

0.1

Diode Forward Current

ISD

0.01

0.0 0.5 1.0 1.5

V

SD - Source to Drain Voltage - V IF - Drain Current - A

Pulsed

trr - Reverse Recovery Time - ns

1

0.1 1 10 100

Data Sheet D15064EJ2V0DS

5

AS

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

1000

VDD = 50 V V

GS = 20

G

R

= 25

Ω

100

2SK3482

SINGLE AVALANCHE ENERGY

DERATING FACTOR

→

0 V

120

100

80

VDD = 50 V

GS = 20

V

G = 25

R

≤

AS

30 A

I

→

0 V

Ω

=

EAS = 90 mJ

10

60

40

20

IAS - Single Avalanche Current - A

1

0.001 0.01 0.1 1 10

Energy Derating Factor - %

0

25 50 75 100 125 150

L - Inductive Load - mH Starting T

ch - Starting Channel Temperature - °C

6

Data Sheet D15064EJ2V0DS

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

2SK3482

6.5 ±0.2

5.0 ±0.2

4

1.6 ±0.2

213

1.1 ±0.2

2.32.3

EQUIVALENT CIRCUIT

Drain

Body

Gate

Diode

+0.2

1.5 −0.1

5.5 ±0.27.0 MIN.

+0.2

−0.1

0.5

0.75

2.3 ±0.2

13.7 MIN.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.5 ±0.1

+0.2

−0.1

0.5

+0.2

4

2.0

MAX.

−0.1

2.3 ±0.2

1.5

5.5 ±0.2

10.0 MAX.

MIN.

0.9

0.8

MAX.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.8

0.5 ±0.1

1.0 MIN.

1.8TYP.

0.7

4.3 MAX.0.8

1.1 ±0.2

6.5 ±0.2

5.0 ±0.2

123

2.3 2.3

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D15064EJ2V0DS

7

2SK3482

•

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

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M8E 02. 11-1