NEC 2sk3481 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

2SK3481

DESCRIPTION

The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES

•Super low on-state resistance:

DS(on)1

= 50 mΩ MAX. (VGS = 10 V, ID = 15 A)

R

DS(on)2

= 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

R

iss

iss

: C

•Low C

= 2300 pF TYP.

•Built-in gate protection diode

ABSOLUTE MAXI MUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V

DS

Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

= 0 V) V

C

= 25°C) I

Note1

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

ch

stg

AS

I

AS

E

–55 to +150

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3481 TO-220AB

2SK3481-S TO-262

2SK3481-ZJ TO-263

2SK3481-Z

Note TO-220SMD package is produced only
in Japan.

100

20

±

30

±

60

±

56

1.5

150

26
68

V
V
A

A
W
W
°C
°C

A

mJ

TO-220SMD

(TO-220AB)

(TO-262)

Note

Notes 1. PW ≤ 10

2. Starting T

s, Duty cycle ≤ 1%

µ

ch

= 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15063EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan

R
R

th(ch-C)

th(ch-A)

2.23

83.3

C/W

°

C/W

°

(TO-263, TO-220SMD)

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3481

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

DSS

VDS = 100 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V

GS(off)VDS

10

±

= 10 V, ID = 1 mA 1.5 2.0 2.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 15 A918S
Drain to Source On-state Resi stance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= 10 V, ID = 15 A4050m
= 4.5 V, ID = 15 A4458m

Ω
Ω

VDS = 10 V 2300 pF
VGS = 0 V 230 pF
f = 1 MHz 120 pF
VDD = 50 V, ID = 15 A13ns
VGS = 10 V10ns
RG = 0

Ω

53 ns

5.0 ns
VDD = 80 V48nC
VGS = 10 V7.0nC
ID = 30 A12nC

= 30 A, VGS = 0 V1.0V
IF = 30 A, VGS = 0 V70ns
di/dt = 100 A/ µs 160 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

VDD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

IAS

ID

DD

V

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

RL

VDD

2

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ = 1 s
Duty Cycle ≤ 1%

Data Sheet D15063EJ1V0DS

G

τ

µ

R

VDD

L

V

GS

Wave Form

ID

Wave Form

VGS

ID

0

0

10%

10%

td(on)

90%

ton

90%

VGS

90%

ID

tr

td(off)

10%

t

f

toff

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3481

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

C

- Case Temperature -

T

˚C

FORWARD BIAS SAFE OPERATING AREA

100

10

R

DS(on)

(at V

Limited

= 10 V)

GS

I

D(DC)

10 ms

DC

Power Dissipation

Limited

I

D(pulse)

10 µs

100 µs

1 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

- Total Power Dissipation - W

T

P

0

08020 40 60 100 140120 160

TC - Case Temperature - ˚C

1

- Drain Current - A

D

I

TC = 25˚C
Single Pulse

0.1

0.1

DS

V

- Transient Thermal Resistance - ˚C/W

th(t)

r

1 10 100

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

10

1

0.1

0.01

µ µ

10 100

1000

TC = 25˚C
Single Pulse

1 m 10 m 100 m 1 10 100

PW - Pulse Width - s

1000

R

R

th(ch-A)

th(ch-C)

= 83.3˚C/W

= 2.23˚C/W

Data Sheet D15063EJ1V0DS

3

2SK3481

FORWARD TRANSFER CHARACTERISTICS

100

Pulsed

10

TA = −40˚C

1

- Drain Current - A

D

0.1

I

0.01
12345

GS

- Gate to Source Voltage - V

V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

V

DS

= 10 V

TA = −40˚C

25˚C

25˚C

75˚C

75˚C

150˚C

150˚C

VDS = 10 V

Pulsed

10

TA = 150˚C

1

75˚C
25˚C

−40˚C

0.1

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

80

60

V

GS

40

- Drain Current - A

D

20

I

= 10 V

0

DS

- Drain to Source Voltage - V

V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

4.5 V

23410

56

80

Pulsed

60

ID = 30 A

40

15 A

20

Pulsed

| - Forward Transfer Admittance - S

fs

0.01

| y

0.01 0.1

D

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

1

- Drain Current - A

80

Pulsed

60

V

GS

= 4.5 V

40

10 V

20

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

10.1

D

- Drain Current - A

I

10 100

10 100

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

4

50 101520

GS

- Gate to Source Voltage - V

V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

3

2

1

- Gate Cut-off Voltage - V

GS(off)

V

0

−50

0 50 100 150

ch

- Channel Temperature - ˚C

T

VDS = 10 V
I

D

= 1 mA

4

Data Sheet D15063EJ1V0DS

2SK3481

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

120

Pulsed

100

80

V

GS

60

= 4.5 V

10 V

40

20

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

−50

0

ch

- Channel Temperature - ˚C

T

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

50

100 150

10000

1000

- Capacitance - pF

rss

, C

oss

, C

iss

C

100

10

0.01

GS

= 0 V

V
f = 1 MHz

0.1 1 10 100

DS

- Drain to Source Voltage - V

V

C

rss

I

D

C

iss

C

= 15 A

oss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

Pulsed

10

V

GS

= 10 V

0 V

1

0.1

- Diode Forward Current - A

SD

I

0.01
0 1.5

0.5

1.0

VSD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1000

100

- Switching Time - ns

f

10

, t

d(off)

, t

r

, t

d(on)

t

VDD = 50 V
VGS = 10 V
RG = 0 Ω

1

t

r

10.1

D

- Drain Current - A

I

t

d(off)

t

d(on)

10 100

t

f

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

0.1

1 10 100

F

- Drain Current - A

I

di/dt = 100 A/ s

GS

= 0 V

V

µ

Data Sheet D15063EJ1V0DS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

80

V

DD

60

= 80 V

50 V
20 V

V

GS

40

20

- Drain to Source Voltage - V

DS

V

V

DS

0

200

Q

G

- Gate Charge - nC

40 6010 30 50

D

= 30 A

I

10

8

6

4

2

- Gate to Source Voltage - V

GS

V

0

5

2SK3481

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

1000

100

IAS = 26 A

10

V

DD

= 50 V

GS

= 20 → 0 V

V

- Single Avalanche Energy - mJ

G

= 25 Ω

R

AS

I

Starting Tch = 25˚C

1

0.001 0.01

0.1

L - Inductive Load - mH

E

AS

=

68 mJ

110

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160
140
120
100

80
60
40

Energy Derating Factor - %

20

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

VDD = 50 V
R

G

= 25 Ω

V

GS

= 20 → 0 V

AS

≤ 26 A

I

125 150

6

Data Sheet D15063EJ1V0DS

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB (MP-25)

2SK3481

2) TO-262 (MP-25 Fin Cut)

10.6 MAX.

10.0 TYP.

3.0±0.3

4

2 3

1

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

3) TO-263 (MP-25ZJ)

10 TYP.

4

φ

3.6±0.2

5.9 MIN.6.0 MAX.

15.5 MAX.12.7 MIN.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

4.8 MAX.

1.3±0.2

2.8±0.2

1.3±0.2

10 TYP.

4

2 3

1

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

4) TO-220SMD (MP-25Z)

10 TYP.

4

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

Note

4.8 MAX.

4.8 MAX.

1.3±0.2

2.8±0.2

1.3±0.2

1.0±0.5

123

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

2.8±0.2

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

8.5±0.2

5.7±0.4

0.5R TYP.

0.8R TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.2

1.0±0.5

123

1.4±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

8.5±0.2

3.0±0.5

1.1±0.4

2.8±0.2

TY

0.5R

0.8R TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

.

P

Note This package is produced only in Japan.

Remark The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Data Sheet D15063EJ1V0DS

0.5±0.2

7

2SK3481

•

The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4