NEC 2sk3307 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3307

DESCRIPTION

The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

•Super low on-state resistance: = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)

DS(on)1

R

= 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)

RDS(on)2

: C

•Low Ciss

= 4650 pF TYP.

iss

•Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation (T Total Power Dissipation (T Channel Temperature T Storage Temperature T

Single Avalanche Current Single Avalanche Energy

Note1

C

= 25°C) P

A

= 25°C) P

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

stg

AS

I

AS

E

±20 V ±70 A

±280 A

T1

T2

ch

120 W

3.0 W

150 °C

–55 to +150 °C

202 mJ

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3307 TO-3P

(TO-3P)

60 V

45 A

s, Duty cycle ≤ 1%

Notes 1. PW ≤ 10

2. Starting T

µ

= 25°C, RG = 25 Ω, VGS = 20 V → 0 V

ch

THERMAL RESISTANCE

Channel to Case R Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D14129EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan

th(ch-C)

th(ch-A)

1.04 °C/W

41.7 °C/W

The mark ★ shows major revised points.

©

1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3307

Zero Gate Voltage Drain Current I Gate Leakage Current I Gate Cut-off Voltage V

DSS

VDS = 60 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V ±10

GS(off)VDS

= 10 V, ID = 1 mA 1.5 2.0 2.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 35 A3047S Drain to Source On-state Resi stance R

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

iss

oss

rss

d(on)ID

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

= 10 V, ID = 35 A7.59.5mΩ = 4.0 V, ID = 35 A 10.5 14 mΩ

VDS = 10 V, VGS = 0 V, f = 1 MHz 4650 pF

780 pF 380 pF

= 35 A, V

RG = 10

GS(on)

= 10 V, VDD = 30 V, 90 ns

Ω 1260 ns

270 ns 370 ns

ID = 70 A , VDD = 48 V, VGS = 10 V90nC

14 nC 24 nC

= 70 A, VGS = 0 V1.0V IF = 70 A, VGS = 0 V, 60 ns di/dt = 100 A/µs 110 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

G

V

DD

τ

µ

V

GS

Wave Form

I

D

Wave Form

V

GS

10%

0

I

90%

D

10%

0

t

d(on)

r

t

on

t

90%

V

GS

(on)

90%

I

D

10%

t

d(off)

t

f

t

off

2

Data Sheet D14129EJ3V0DS

TYPICAL CHARACTERISTICS (TA = 25°C )

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T

ch

- Channel Temperature -

˚C

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

8020 40 60 100 140120 160

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

25

50

75

100

125

175 150

FORWARD BIAS SAFE OPERATING AREA

1 10 100

I

D

- Drain Current - A

0.1

V

DS

- Drain to Source Voltage - V

1000

100

10

1

0.1

DC

R

DS(on)

Limited

(at V

GS

= 10 V)

TC = 25˚C Single Pulse

Power Dissipation

Limited

10

ms

1

ms

100

µs

PW

=

10

µs

ID(pulse)

★

2SK3307

1000

100

10

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.01

µ

10

100

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 m 10 m 100 m 1 10 100 1000

µ

PW - Pulse Width - s

Data Sheet D14129EJ3V0DS

Single Pulse

R

th(ch-A)

th(ch-C)

= 41.7 ˚C/W

= 1.04 ˚C/W

3

2SK3307

FORWARD TRANSFER CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

Pulsed

1234

5

6

V

DS

= 10 V

10

1

0.1

100

1000

TA = −50˚C

25˚C 75˚C

150˚C

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

4

300

250

200

150

100

50

0

2

Pulsed

0

3

1

V

GS

=10 V

4.0 V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

I

D

- Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

0.1

1

10

100

10 100

0.1

1

Pulsed

TA = 150˚C 75˚C 25˚C

−50˚C

V

DS

= 10 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

V

GS

- Gate to Source Voltage - V

R

DS(on)

- Drain to Source On-state Resistance - mΩ

0

5101015 20

Pulsed

20

ID = 35 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-state Resistance - mΩ

10

0.1 1

20

30

100

1000

Pulsed

0

10 V

V

GS

= 4.0 V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate Cut-off Voltage - V

0.5

VDS = 10 V I

D = 1 mA

1

1.5

2

2.5

3

−50

0 50 100 150

0

4

Data Sheet D14129EJ3V0DS

2SK3307

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

R

DS(on)

- Drain to Source On-state Resistance - mΩ

0

−50

5

10

15

0

50

100 150

I

D

= 35 A

20

25

10 V

V

GS

= 4.0 V

Pulsed

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

0.8 1.2 1.6

I

SD

- Diode Forward Current - A

0

2.0

VSD - Source to Drain Voltage - V

0.4

Pulsed

1

10

100

1000

V

GS

= 10 V

V

GS

= 0 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

C

iss

, C

oss

, C

rss

- Capacitance - pF

100

0.1

1000

10000

100000

1

10

100

VGS = 0 V f = 1 MHz

C

oss

C

rss

C

iss

SWITCHING CHARACTERISTICS

I

D

- Drain Current - A

t

d(on)

, t

r

, t

d(off)

, t

f

- Switching Time - ns

100

10

10.1

1000

10000

10 100

t

f

t

r

t

d(on)

t

d(off)

REVERSE RECOVERY TIME vs. DRAIN CURRENT

I

F

- Drain Current - A

t

rr

- Reverse Recovery Time - ns

di/dt = 100 A/ s V

GS

= 0 V

1

0.1

10

1.0 10 100

1000

100

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

Q

G

- Gate Charge - nC

V

DS

- Drain to Source Voltage - V

00

0

40 6020 80 100 120 140 160

20

40

60

80

100

2

4

V

DS

6

10

8

V

GS

V

DD

= 48 V

30 V 12 V

I

D

= 70 A

Data Sheet D14129EJ3V0DS

5

2SK3307

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

L - Inductive Load - H

I

AS

- Single Avalanche Current - A

10

100

1000

1

m10

m

V

DD

= 30 V

R

G

= 25 Ω

V

GS

= 20 V → 0 V

IAS = 45 A

10

µ

100

µ

1

E

AS

=

202

mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

Starting T

ch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

25 50

75 100

160 140 120 100

80 60 40 20

0

125 150

VDD = 30 V R

G

= 25 Ω

V

GS

= 20 V → 0 V

I

AS

≤ 45 A

6

Data Sheet D14129EJ3V0DS

PACKAGE DRAWING (Unit: mm)

TO-3P (MP-88)

2SK3307

Remark

15.7 MAX. 3.2±0.2

6.0 1.03.0±0.2

20.0±0.219 MIN.

2.2±0.2

1 2 3

5.45 5.45

4

1.0±0.2

4.7 MAX.

1.5

7.0

4.5±0.2

2.8±0.10.6±0.1

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate Protection Diode

Source

Diode

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D14129EJ3V0DS

7

2SK3307

•

The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

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•

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•

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M8E 00. 4