NEC 2SK3296 Technical data

DATA SHEET

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MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3296

DESCRIPTION

The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

DS(on)1

= 12 mΩ MAX. (VGS = 10 V, ID = 18 A)

R

• Low gate charge

QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V

DS

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (Pulse)

= 0 V) V

C

= 25°C) I

Note

DSS

GSS

D(DC)

D(pulse)

I

20 V

±20 V

±35 A

±140 A

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3296 TO-220AB

2SK3296-S TO-262

2SK3296-ZK TO-263(MP-25ZK)

2SK3296-ZJ TO-263(MP-25ZJ)

A

Total Power Dissipation (T

= 25°C) P

Total Power Dissipation (TC = 25°C) P

Channel Temperature T

Storage Temperature T

Note

PW ≤ 10 µs, Duty Cycle ≤ 1%

Document No. D14063EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan

T1

T2

ch

stg

The mark

1.5 W

40 W

150 °C

−55 to +150 °C



shows major revised points.

©

1999, 2000

ELECTRICAL CHARACTERISTICS(TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Leakage Current I

Gate Leakage Current I

DSS

GSS

2SK3296

VDS = 20 V, VGS = 0 V 10

VGS = ±20 V, VDS = 0 V

±

10

A

µ

A

µ

R

d(on)

r

d(off)

f

rr

GS(off)

DS(on)1

DS(on)2

iss

oss

rss

G

GS

GD

F(S-D)

rr

VDS = 10 V, ID = 1 mA 1.0 2.5 V

DS

= 10 V, ID = 18 A 9.0 S

VGS = 10 V, ID = 18 A 8.5 12

VGS = 4.5 V, ID = 18 A 12 19

VDS = 10 V 1300 pF

VGS = 0 V 570 pF

f = 1 MHz 300 pF

VDD = 10 V , ID = 18 A 70 ns

GS(on)

V

= 10 V 1220 ns

RG = 10

Ω

VDD = 16 V 30 nC

VGS = 10 V 4.5 nC

ID = 35 A 8.0 nC

IF = 35 A, VGS = 0 V 1.0 V

IF = 35 A, VGS = 0 V 35 ns

di/dt = 100 A/µs

Gate Cut-off Voltage V

Forward Transfer Admittance | yfs |V

Drain to Source On-state Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Turn-on Delay Time t

Rise Time t

Turn-off Delay Time t

Fall Time t

Total Gate Charge Q

Gate to Source Charge Q

Gate to Drain Charge Q

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

m

100 ns

180 ns

23 nC

Ω

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

G

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

V

GS

10%

0

I

D

90%

10%

0

t

d(on)

r

t

on

t

90%

V

GS

(on)

PG.

90%

I

D

t

d(off)

10%

t

f

t

off

IG = 2 mA

50 Ω

R

L

V

DD

2

Data Sheet D14063EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3296

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

160 140

V

GS

120

=10 V

7.0 V

100

80 60

- Drain Current - A

D

40

I

20

0

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

1

V

DS

- Drain to Source Voltage - V

2

3.0

2.5

2.0

1.5

4.5 V

Pulsed

VDS = 10 V ID = 1 mA

FORWARD TRANSFER CHARACTERISTICS

1000

100

T

ch

= −50˚C

10

0.1

- Drain Current - A

D

I

−25˚C 25˚C 75˚C

125˚C

1

150˚C

0.01 V

DS

= 10 V

0.001

3

012 3

V

GS

- Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

Pulsed

4

56

100

T

ch

= −50˚C

−25˚C 25˚C

75˚C

10

150˚C

1.0

0.5

- Gate to Source Cut-off Voltage - V

0

GS(off)

−50

V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

50

40

0 50 100 150

T

ch

- Channel Temperature - ˚C

Pulsed

ID = 28 A 18 A

30

7 A

20

10

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

V

GS

- Gate to Source Voltage - V

1051520

1

| - Forward Transfer Admittance - S

fs

0.1

| y

0.1

50

Pulsed

1 10 100

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

40

30

20

V

GS

= 4.5 V

7.0 V 10 V

10

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

101

I

D

- Drain Current - A

DS

= 10 V

V

Pulsed

1000100

Data Sheet D14063EJ2V0DS

3