NEC 2sk3230 Datasets

Page 1
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3230B is suitable for converter of ECM.
General-purpose product.
FEATURES
• Low noise:
0.8 ±0.1 0.4
−108.5 dB TYP. (V
DD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
1.6 ±0.1
• Especially suitable for audio and telephone
• Small package:
SC-89 (TUSM)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3230B SC-89 (TUSM)
0.5 ±0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V
Gate to Drain Voltage V
GDO −20 V
0.3 ±0.05
2
1.6 ±0.1
3
1
0.50.5
+0.1
0.2
–0
0.1
+0.1 –0.05
EQUIVALENT CIRCUIT
2
Drain Current I
Gate Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
D 10 mA
G 10 mA
T 100 mW
j 125 °C
stg −55 to +125 °C
3
1: Source 2: Drain 3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17283EJ1V0DS00 (1st edition) Date Published August 2004 NS CP(K) Printed in Japan
1
2004
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3230B
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
Input Capacitance
Voltage Gain
Noise Voltage
I
DSS VDS = 2.0 V, VGS = 0 V 90 200 430
V
GS(off) VDS = 2.0 V, I D = 1.0
| y
fs1 | VDS = 2.0 V, ID = 30
| y
fs2 | VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz 750 1300
C
iss VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz 4.0 pF
G
V VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, −1.0 dB
V
NV V
A-curve
IN = 10 mV, f = 1 kHz
DD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, −108.5 dB
µ
A −0.37 −1.0 V
µ
A, f = 1.0 kHz 300 480
IDSS CLASSIFICATION
MARKING CE CF CH CJ
IDSS (µA) 90 to 180 150 to 240 210 to 350 320 to 430
VOLTAGE GAIN TEST CIRCUIT
V
DD
µ
A
µ
S
µ
S
L
R
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
L
R
NV (r.m.s)JIS A
C
2
Data Sheet D17283EJ1V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
V
DERATING FACTOR OF POWER DISSIPATION DRAIN CURRENT vs.
120
2SK3230B
DRAIN TO SOURCE VOLTAGE
1000
100
dT - Derating Factor - %
80
60
40
20
0
0 25 50 75 100 125 150 175
T
A - Ambient Temperature - °C
800
A
µ
−0.2 V
−0.3 V
600
400
200
ID - Drain Current -
0
0246810
V
DS - Drain to Source Voltage - V
VGS = 0.2 V
0.1 V
0 V
−0.1 V
A
µ
IGS - Gate to Source Current -
GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE
40
30
20
10
−
−
−
−
0.6
0.8
0.4
0.2
−10
−20
−30
−
40
0
0.2 0.4 0.6 0.8
V
GS - Gate to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1600
VDS= 2.0
1400
A
µ
1200
1000
800
600
400
200
ID - Drain Current -
0
-0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1
V
GS - Gate to Source Voltage - V
INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT
10
VGS = 0 V
10
VDS= 2.0 V
f = 1.0 MHz
| yfs |
1
GS(off)
V
Ciss - Input Capacitance - pF
1
110100
V
DS - Drain to Source Voltage - V
GS(off) - Gate Cut-off Voltage - V
V
0.1
| yfs | - Forward Transfer Admittance - mS
10 100 1000
I
DSS - Zero Gate Voltage Drain Current -
µ
A
Data Sheet D17283EJ1V0DS
3
Page 4
2SK3230B
VOLTAGE GAIN vs. DRAIN CURRENT
3
VDD = 2.0 V C = 5 pF
2
L
= 2.2 kΩ
R
1
IN
= 10 mV
V f = 1 kHz
0
−1
−2
−3
−4
GV - Voltage Gain - dB
−5 10 100 1000
I
DSS - Drain Current -
NOISE VOLTAGE vs. DRAIN CURRENT
−103
−105
VDD = 2.0 V C = 5 pF
L
= 2.2 kΩ
R
−107
−109
−111
−113
NV - Noise Voltage - dB
−115
µ
A
10 100 1000
I
DSS - Drain Current -
µ
A
4
Data Sheet D17283EJ1V0DS
Page 5
2SK3230B
•
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M8E 02. 11-1
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