NEC 2sk3116 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

2SK3116

DESCRIPTION

The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

•Low gate charge = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)

QG

•Gate voltage rating ±30 V

•Low on-state resistance

= 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)

RDS(on)

•Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (VDS = 0 V) V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation (TA

Note1

= 25°C) P

DSS GSS ±30 V

D(DC) ±7.5 A

I

D(pulse) ±30 A

T1

600 V

1.5 W

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3116 TO-220AB

2SK3116-S TO-262

2SK3116-ZJ TO-263

Total Power Dissipation (T

= 25°C) P

C

Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt

Notes 1. PW ≤ 10

µ

2. Starting T ≤ 3.0 A, V

F

3. I

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan

Note2

Note3

s, Duty Cycle ≤ 1%

= 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V

ch

= 600 V, di/dt ≤ 100 A/ µs, TA = 25°C

clamp

T2

ch stg −55 to +150 °C

I

AS

E

AS

70 W

150 °C

7.5 A

37.5 mJ

dv/dt 3.5 V/ns

The mark ★ shows major revised points.

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHRACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I Gate Leakage Current I

DSS

VDS = 600 V, VGS = 0 V 100

GSS

VGS = ±30 V, VDS = 0 V ±100

2SK3116

A

µ

nA

Gate Cut-off Voltage V

GS(off)VDS

= 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.75 A 2.0 S Drain to Source On-state Resistance R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time T Reverse Recovery Charge Q

TEST CIRCUIT 1 AVALANCHE CAPABILITY

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GDID

F(S-D)IF

rr

= 10 V, ID = 3.75 A 0.9 1.2

VDS = 10 V 1100 pF VGS = 0 V 200 pF f = 1 MHz 20 pF VDD = 150 V, ID = 3.75 A 18 ns VGS = 10 V 15 ns RG = 10 Ω RL = 50 Ω

50 ns

15 ns VDD = 450 V 26 nC VGS = 10 V 6 nC

= 7.5 A 10 nC = 7.5 A, VGS = 0 V 1.0 V

IF = 7.5 A, VGS = 0 V 1.6 di/dt = 50 A/ µs

7.6

TEST CIRCUIT 2 SWITCHING TIME

Ω

s

µ

C

µ

D.U.T.

R

G

= 25 Ω

PG.

VGS = 20 → 0 V

50 Ω

BV

DSS

I

AS

I

D

V

DD

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

= 2 mA

PG.

50 Ω

V

DS

Starting T

R

V

DD

L

R

DD

V

PG.

V

GS

G

R

G

= 10 Ω

L

R

V

DD

0

τ

τ = 1 µs

D.U.T.

ch

L

Duty Cycle ≤ 1%

V

GS

Wave Form

I

D

Wave Form

V

GS

t

90%

on

trt

V

I

D

d(off)tf

10%

0

I

D

10% 10%

0

t

d(on)

t

90%

off

2

Data Sheet D13339EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3116

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

25

20

15

10

- Drain Current - A

D

I

5

0

DS

V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

5.0

4.0

3.0

2.0

VGS = 10 V

10 4020 30

- Drain to Source Voltage - V

Pulsed

8 V

6 V

FORWARD TRANSFER CHARACTERISTICS

100

Tch = 125

˚C

75

˚C

10

Tch = 25

1.0

- Drain Current - A

D

I

0.1

GS

V

- Gate to Source Voltage - V

−25

˚C ˚C

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

10

Tch = −25

˚C

25

˚C

75

˚C

125

˚C

1.0

VDS = 10 V Pulsed

151050

- Gate Cut-off Voltage - V

1.0

GS(off)

VDS = 10 V

V

I

D

= 1 mA

0

−50 0 50 100 150 T

ch

- Channel Temperature -

˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

3.0 Pulsed

2.0

ID = 4.0 A

7.5 A

1.0

- Drain to Source On-State Resistance - Ω

DS (on)

R

0

515

GS

- Gate to Source Voltage - V

V

10

| - Forward Transfer Admittance - S

VDS = 10 V

fs

Pulsed

| y

0.1

1.0 10

I

D

- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

3.0

2.0

VGS = 10 V

20 V

1.0

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

1.0 I

D

- Drain Current - A

Pulsed

10 100

Data Sheet D13339EJ2V0DS

3

2SK3116

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

4.0

3.0

ID = 7.5 A

2.0

4.0 A

1.0

- Drain to Source On-State Resistance - Ω

DS (on)

R

0

0 100−50

T

ch

- Channel Temperature -

50 150

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

1000

- Capacitance - pF

100

rss

, C

oss

10

, C

iss

C

1

VGS = 0 V f = 1 MHz

V

DS

- Drain to Source Voltage - V

VGS = 10 V

Pulsed

˚C

C

iss

C

oss

C

rss

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

10

1.0

0.1

- Diode Forward Current - A

SD

I

VGS = 10 V

0 V

Pulsed

1.51.00.50

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

100

t

d(off)

t

f

t

10

- Switching Time - ns

f

, t

1

d(off)

, t

r

, t

d(on)

t

0.1

1000100101.0

0.1 1 10 I

d(on)

t

r

D

- Drain Current - A

V

DD =

V

GS

R

G = 10

150 V

= 10 V

Ω

10000

1000

100

- Reverse Recovery Time - ns

rr

t

10

0.1

4

REVERSE RECOVERY TIME vs. DRAIN CURRENT

di/dt = 50 A/ µs

GS

= 0 V

V

1.0 10 100

I

D

- Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

600

400

200

- Drain to Source Voltage - V

DS

V

01282032

Data Sheet D13339EJ2V0DS

VDD = 450 V

300 V 150 V

V

DS

QG - Gate Charge - nC

ID = 7.5 A

V

GS

16 14 12 10 8 6 4

- Gate to Source Voltage - V

GS

2

V

0

2SK3116

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

04020 60 100 14080 120 160

T

C

- Case Temperature -

FORWARD BIAS SAFE OPERATING AREA

100

I

D(pulse)

10

R

1

- Drain Current - A

D

I

DS(on)

Limited

I

D(DC)

Power Dissipation Limited

3 ms

1

0

m

30 ms

100

ms

DC

★★

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

80 70 60 50 40 30 20

- Total Power Dissipation - W

T

10

P

08020 40 60 100 140120 160

˚C

PW

= 10

µs

100

µs

1 ms

s

TC - Case Temperature - ˚C

TC = 25˚C Single Pulse

0.1 1

★

100

10 100 1000

V

DS

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(ch-A)

= 83.3˚C/W

10

R

th(ch-C)

= 1.79˚C/W

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

0.01

r

µ

100 m 1 10 100 100010 m1 m10010

PW - Pulse Width - s

Data Sheet D13339EJ2V0DS

5

2SK3116

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100

10

IAS = 7.5 A

1.0 RG = 25 Ω

DD

= 150 V

V

- Single Avalanche Current - A

AS

GS

= 20 → 0 V

V

I

Starting Tch = 25

0.1

10 µ

˚C

100 µ 1 m 10 m

L - Inductive Load - H

E

AS

= 37.5 mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

120

100

80

60

40

Energy Derating Factor - %

20

0

Starting T

50 10025

75 150125

ch

- Starting Channel Temperature - ˚C

VDD = 150 V R

G

= 25 Ω

V

GS

= 20 → 0 V

I

AS

≤ 7.5 A

6

Data Sheet D13339EJ2V0DS

★

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut)

2SK3116

10.6 MAX.

10.0 TYP.

3.0±0.3

4

2 3

1

1.3±0.2

0.75±0.1

2.54 TYP.

3) TO-263 (MP-25ZJ)

10 TYP.

4

φ

3.6±0.2

5.9 MIN.6.0 MAX.

15.5 MAX.12.7 MIN.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

1.3±0.2

2.8±0.2

1.3±0.2

10 TYP.

4

2 3

1

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

EQUIVALENT CIRCUIT

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

1.0±0.5

123

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

8.5±0.2

5.7±0.4

2.8±0.2

0.5R TYP.

0.8R TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.2

Gate (G)

Drain (D)

Body Diode

Source (S)

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D13339EJ2V0DS

7

2SK3116

•

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

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•

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•

Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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M8E 00. 4