NEC 2sk3114 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3114

DESCRIPTION

The 2SK3114 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES

•Low on-state resistance:

R

DS(on)

= 2.2

Ω MAX. (VGS

= 10 V, ID = 2.0 A)

•Low gate charge:

= 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)

G

Q

•Gate voltage rating: ±30 V

•Avalanche capability ratings

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

GSS

D(DC)

D(pulse)

I

AS

I

E

DSS

T1

T2

ch

stg

AS

600 V

±30 V

±4.0 A

±16 A

30 W

2.0 W

150 °C

–55 to +150 °C

4.0 A

10.7 mJ

Drain to Source Voltage (VGS = 0 V) V

DS

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature T

Storage Temperature T

Single Avalanche Current

Single Avalanche Energy

= 0 V) V

C

= 25°C) I

Note1

C

= 25°C) P

A

= 25°C) P

Note2

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3114 Isolated TO-220

★

(Isolated TO-220)

s, Duty cycle ≤ 1%

Notes 1. PW ≤ 10

2. Starting T

Document No. D13337EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP(K) Printed in Japan

µ

= 25°C, VDD = 150 V, RG = 25 Ω, V

ch

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

= 20 → 0 V

GS

The mark ★ shows major revised points.

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

2SK3114

Zero Gate Voltage Drain Current I

Gate Leakage Current I

Gate Cut-off Voltage V

DSS

VDS = 600

GSS

VGS = ±30 V, VDS = 0

GS(off)VDS

V, VGS = 0 V 100

V ±10

= 10 V, ID = 1 mA 2.5 3.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2.0 A1.050S

Drain to Source On-state Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Turn-on Delay Time t

Rise Time t

Turn-off Delay Time t

Fall Time t

Total Gate Charge Q

Gate to Source Charge Q

Gate to Drain Charge Q

Body Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GDID

F(S-D)IF

rr

= 10 V, ID = 2.0

VDS = 10 V 550 pF

VGS = 0 V 115 pF

f = 1 MHz 13 pF

VDD = 150 V, ID = 2.0 A12ns

GS(on)

V

= 10 V6ns

RG = 10

Ω 35 ns

RL = 10

Ω 12 ns

VDD = 450 V15nC

VGS = 10 V4nC

= 4.0 A4.4nC

= 4.0 A, VGS = 0 V0.9V

IF = 4.0 A, VGS = 0 V1.3

di/dt = 50 A/µs4.3

A1.62.2Ω

s

µ

C

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1%

G

V

DD

τ

µ

V

GS

Wave Form

I

D

Wave Form

V

GS

10%

0

I

90%

D

10%

0

t

d(on)

r

t

on

t

90%

V

GS

(on)

90%

I

D

10%

t

d(off)

t

f

t

off

2

Data Sheet D13337EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C )

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T

ch

- Channel Temperature -

˚C

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

P

T

- Total Power Dissipation - W

08020 40 60 100 140120 160

40

30

20

10

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

FORWARD BIAS SAFE OPERATING AREA

10 100 1 000

I

D

- Drain Current - A

1

V

DS

- Drain to Source Voltage - V

100

10

1

0.1

Power Dissipation Limited

100

m

s

10

ms

1

ms

100

m

s

PW

=

10

m

s

R

D

(on) Limited

ID(pulse)

ID(DC)

3

ms

TC = 25˚C Single Pulse

2SK3114

100

10

1

0.1

0.01 10

m

rth(t) - Transient Thermal Resistance - ˚C/W

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

m

Data Sheet D13337EJ2V0DS

Rth(CH-A) = 62.5 ˚C/W

Rth(CH-C) = 4.17 ˚C/W

Single Pulse

100m 1 10 100 1 00010m1m100

PW - Pulse Width - s

3

2SK3114

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

10 4020 30

5

10

0

6 V

VGS = 10 V

8 V

Pulsed

FORWARD TRANSFER CHARACTERISTICS

V

GS - Gate to Source Voltage - V

ID - Drain Current - A

151050

100

10

1.0

0.1

VDS = 10V Pulsed

Tch = 125 ˚C

75 ˚C

25 ˚C

-25 ˚C

GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature -

˚C

V

GS(off)

- Gate to Source Cutoff Voltage - V

-50 0 50 100 150

5.0

4.0

3.0

2.0

1.0

0

VDS = 10 V I

D

= 1 mA

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

1.0 10

I

D

- Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

10

0.1

1.0

0.1

VDS = 10 V Pulsed

Tch = -25 ˚C

25 ˚C 75 ˚C

125 ˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

10

2.0

V

GS

- Gate to Source Voltage - V

R

DS (on)

- Drain to Source On-State Resistance -

W

1.0

0

515

0

3.0

ID = 4.0 A

Pulsed

2.0 A

4

Data Sheet D13337EJ2V0DS

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

W

3.0

2.0

1.0

- Drain to Source On-State Resistance -

DS(on)

0

R

1.0

D

I

Pulsed

VGS = 10 V

VGS = 20 V

10 100

- Drain Current - A

2SK3114

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

50 150

R

DS (on)

- Drain to Source On-State Resistance -

W

2.0

0

0 100-50

T

ch

- Channel Temperature -

˚C

3.0

1.0 VGS = 10 V Pulsed

4.0

2.0 A

ID = 4.0 A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

V

SD

- Source to Drain Voltage - V

I

SD

- Diode Forward Current - A

1.51.00.50

100

10

1.0

0.1

Pulsed

0 V

VGS = 10 V

1001010.1

10 000

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

C

iss

, C

oss

, C

rss

- Capacitance - pF

1 000

100

10

1

V

GS =

0 V

f = 1 MH

Z

C

iss

C

oss

C

rss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

0.1 1 10 I

D

- Drain Current - A

td

(on)

,

tr,

td

(off)

,

tf

-

Switching

Time

-

ns

100

10

1

0.1

V

DD =

150 V

V

GS

= 10 V

RG = 10 W

td(off)

td(on)

tf

tr

REVERSE RECOVERY TIME vs. DRAIN CURRENT

0.1 1 10

t

rr

- Reverse Recovery Time - ns

0.01 I

D

- Drain Current - A

10 000

1 000

100

10

di/dt = 50 A/

m

S

VGS = 0 V

Qg - Gate Charge - nC

V

DS

- Drain to Source Voltage - V

0841216

600

400

200

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

16 14 12 10 8 6 4 2 0

V

GS

V

DS

ID = 4 A

VDD = 450 V

300 V 150 V

Data Sheet D13337EJ2V0DS

5

2SK3114

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100

m

1m 10m

100

L - Inductive Load - H

I

AS

- Single Avalanche Current - A

1.0

10

0.1 10

m

RG = 25

W

V

DD

= 150 V

V

GS

= 20

®

0 V

Starting Tch = 25

˚C

E

AS

= 10.7 m

J

IAS = 4 A

SINGLE AVALANCHE ENERGY DERATING FACTOR

75 150125

120

80

40

0

Starting Tch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

50 10025

VDD =

150 V

R

G

= 25

W

V

GS

=

20 ®

0 V

I

AS

£ 4

A

100

60

20

PACKAGE DRAWINGS (Unit: mm)

Isolated TO-220 (MP-45F)

10.0±0.3

3.2±0.2

φ

3±0.1

15.0±0.3

4±0.2

0.7±0.1 1.3±0.2

1.5±0.2

2.54 TYP.2.54 TYP.

123

4.5±0.2

12.0±0.213.5 MIN.

0.65±0.1

1.Gate

2.Drain

3.Source

2.7±0.2

2.5±0.1

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate Protection Diode

Source

Diode

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

6

Data Sheet D13337EJ2V0DS

[MEMO]

2SK3114

Data Sheet D13337EJ2V0DS

7

2SK3114

•

The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this docum e nt.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots

"Spe c ial ": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If c ustomers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4