NEC 2sk3109 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3109

DESCRIPTION

The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

DS(on)

= 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)

R

• Low input capacitance

iss

C

= 400 pF TYP. (VDS = 10 V, VGS = 0 V)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to source voltage (VGS = 0 V) V

DS

Gate to source voltage (V Drain current (DC) (T Drain current (pulse) Total power dissipation (T Total power dissipation (T

= 0 V) V

C

= 25 °C) I

Note1

A

= 25 °C) P

C

= 25 °C) P Channel temperature T Storage temperature T Single avalanche current Single avalanche energy

Note2

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

ch

stg

AS

I

AS

E

−55 to +150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3109 TO-220AB

2SK3109-S TO-262

2SK3109-ZJ TO-263

200 V

±30 V ±10 A ±30 A

1.5 W 50 W

150 °C

10 A 35 mJ

Notes 1.

Document No. D13332EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan

PW ≤ 10 µs, Duty Cycle ≤ 1 % Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V

2.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

The mark ★ shows major revised points.

©

1998, 2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Drain Leakage Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 5.0 A 1.5 S Drain to Source On-state Resistance R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

★

Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

GSS

GS(off)

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)

rr

VDS = 200 V, VGS = 0 V 100 VGS = ±30 V, VDS = 0 V

±

VDS = 10 V, ID = 1 mA 2.5 4.5 V

VGS = 10 V, ID = 5.0 A 0.32 0.4 VDS = 10 V 400 pF VGS = 0 V 110 pF f = 1 MHz 55 pF VDD = 100 V 12 ns ID = 5.0 A 34 ns

GS(on)

V

= 10 V 40 ns

RG = 10

Ω

20 ns VDD = 160 V 18 nC VGS = 10 V 3.5 nC ID = 10 A 10 nC IF = 10 A, VGS = 0 V 1.0 V IF = 10 A, VGS = 0 V 250 ns di/dt = 50 A/µs1.0

2SK3109

µ

10

µ

Ω

µ

A A

C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

DD

V

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

L

R

PG.

V

GS

0

τ = 1 s Duty Cycle ≤ 1 %

G

V

DD

τ

µ

V

GS

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D13332EJ1V0DS00

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS - Drain to Source Voltage - V

ID - Drain Current - A

10 20 30

25

5

0

Pulsed

10

15

20

30

35

0

VGS = 10 V

VGS = 30 V

40 50

0.01

0

0.1

1

10

412

0.001

100

V

DS

= 10 V

Pulsed

FORWARD TRANSFER CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

816

Tch = 125

˚C

75

˚C

25

˚C

-25

˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate to Source Cut-off Voltage - V

V

DS = 10

V

I

D = 1

mA

−50

0 15050

2.0

2.5

100

3.0

3.5

4.0

4.5

5.0

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

|yfs| - Forward Transfer Admittance - S

ID- Drain Current - A

1

10

10 100

VDS = 10 V Pulsed

Tch = −25 ˚C

25 ˚C 75 ˚C

125 ˚C

0.01

0.1

0.01 0.1

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

V

GS

- Gate to Source Voltage - V

R

DS(on)

- Drain to Source On-state Resistance - Ω

08

0.1

10 16

0.3

0.2

0.4

0.5

0

20

246 1214 18

0.6

0.7

0.8

0.9

1.0

ID = 10 A

5 A 2 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-state Resistance - Ω

1.2

0.8

0.6

0.2

10 1000.1

0

1

Pulsed

VGS = 10 V

0.4

1.0

1.4

VGS = 30 V

★

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3109

Data Sheet D13332EJ1V0DS00

3

2SK3109

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

50 150

R

DS (on)

- Drain to Source On-state Resistance - Ω

0.4

0

0 100−50

T

ch

- Channel Temperature -

˚C

0.6

0.2 V

GS

= 10 V

Pulsed

ID = 5 A

0.8

1.0

1.2

ID = 10 A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

V

SD

- Source to Drain Voltage - V

I

SD

- Diode Forward Current - A

0.0

0.1

1

10

0.5 1.0 1.5

100

VGS = 10 V

0 V

Pulsed

2.0

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

C

iss

, C

oss

, C

rss

- Capacitance - pF

0.1

100

1000

1 10 100

V

GS = 0

V

f

= 1

MHz

C

iss

C

oss

C

rss

10

10000

1000

SWITCHING CHARACTERISTICS

I

D

- Drain Current - A

t

d(on)

, t

r

, t

d(off)

, t

f

- Switching Time - ns

1

0.1

10

100

1000

1 10 100

V

DD

=

100 V

V

GS

=

10 V

R

G

=

10 Ω

t

d(off)

t

d(on)

t

r

t

f

REVERSE RECOVERY TIME vs. DRAIN CURRENT

I

D

- Drain Current - A

t

rr

- Reverse Recovery Time - ns

0.1

10

1 10 100

100

di/dt = 50 A/ µs V

GS

= 0

V

1

1000

V

GS

- Gate to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Q

G

- Gate Charge - nC

V

DS

- Drain to Source Voltage - V

0 5 10 15 20

50

100

150

200

2

4

6

8

0

10

12

14

16

0

V

GS

V

DS

ID = 10 A

VDD = 160 V

100 V

40 V

4

Data Sheet D13332EJ1V0DS00

2SK3109

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T

C

- Case Temperature - ˚C

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

20

40

60

80

100

0

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

T

C

- Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

70

60

50

40

30

20

10

0

FORWARD BIAS SAFE OPERATING AREA

10 100 1000

ID - Drain Current - A

1

V

DS - Drain to Source Voltage - V

100

10

1

0.1

100

µs

1

ms

PW

=

10

µs

R

DS(on)

Limited

ID(pulse)

I

D(DC)

3

ms

Power Dissipation Limited

TC = 25 ˚C Single Pulse

10 ms

100

10

1

(t) - Transient Thermal Resistance - ˚C/W

th

r

0.1

0.01

10µ

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

Rth(ch-A) = 83.3

Rth(ch-C) = 2.5

˚C/W

Single Pulse

100µ

1m 10m 100m 1 10 1000100

PW - Pulse Width - s

Data Sheet D13332EJ1V0DS00

5

2SK3109

0.01

10

0.1 1

10

100

V

DD

= 100 V

V

GS

= 20 V → 0 V

R

G

= 25 Ω

Starting T

ch

= 25 ˚C

1

SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD

L - Inductive Load - mH

I

AS

- Single Avalanche Energy - A

I

AS

= 10

A

E

AS

=

35

mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

75 150125

80

40

0

Starting Tch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

50 10025

100

60

20

V

DD

=

100 V

R

G

= 25

Ω

V

GS

= 20 V → 0

V

I

AS

≤ 10

A

6

Data Sheet D13332EJ1V0DS00

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)

2SK3109

10.6 MAX.

3.0±0.3

4

1

1.3±0.2

0.75±0.1

2.54 TYP.

3)TO-263 (MP-25ZJ)

10.0

2 3

φ

3.6±0.2

5.9 MIN.6.0 MAX.

2.54 TYP.

15.5 MAX.12.7 MIN.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

1.3±0.2

2.8±0.2

(10)

4

1

2 3

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

EQUIVALENT CIRCUIT

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

1.0±0.5

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

123

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

(10)

4.8 MAX.

1.3±0.2

4

Drain

Body

Gate

8.5±0.2

Diode

Gate

(0.5R)

5.7±0.4

2.8±0.2

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.2

Protection Diode

Source

Data Sheet D13332EJ1V0DS00

7

2SK3109

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• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

M7 98. 8