NEC 2sk3107 Datasets

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

2SK3107

DESCRIPTION

The 2SK3107 is a switching device which can be driven directly by a

2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5-V power source

• Low gate cut-off voltage

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3107 SC-75(USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation

★

Note1

Note2

Channel Temperature T Storage Temperature T

DSS

GSS

D(DC)

D(pulse)

stg

±20 V ±0.1 A ±0.4 A

200 mW 150 °C

–55 to +150 °C

30 V

PACKAGE DRAWING (Unit : mm)

0.3 ± 0.05

1.6 ± 0.1

0.8 ± 0.1

+0.1

0.2

–0

0.5 0.5

1.0

1.6 ± 0.1

0.6

0.75 ± 0.05

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate Protection Diode

Source

Diode

+0.1

0.1

–0.05

0 to 0.1

Notes 1.

Remark

PW ≤ 10

Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD.

s, Duty Cycle ≤ 1 %

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D13802EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan

The mark

★★★★

shows major revised points.

Marking: D1

1999

Page 2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3107

Drain Cut-off Current I Gate Leakage Current I Gate Cut-off Voltage V

DSS

VDS = 30 V, VGS = 0 V1

GSS

VGS = ±20 V, VDS = 0 V±10

GS(off)VDS

= 3 V, ID = 10 µA 1.0 1.4 1.8 V

Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS

DS(on)1VGS

Drain to Source On-state Resi stance

R R

R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

DS(on)2VGS

DS(on)3VGS

iss

oss

rss

d(on)

d(off)

= 2.5 V, ID = 1 m A815 = 4 V, ID = 10 mA 4 8 = 10 V, ID = 10 mA 3 5

Ω Ω Ω

VDS = 3 V9pF VGS = 0 V12pF f = 1 MHz 2.1 pF VDD = 3 V40ns ID = 10 mA 55 ns

GS(on)

= 4 V68ns

Ω,

= 300

Ω

64 ns

RG = 10

Data Sheet D13802EJ2V0DS00

Page 3

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3107

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

dT - Derating Factor - %

VDS = 3 V

0.1

0.01

0.001

- Drain Current - A

0.0001

0.00001

0.000001

1.0

TA - Ambient Temperature -

120

˚C

TRANSFER CHARACTERISTICS

= 125˚C

75˚C 25˚C

−25˚C

2.0

3.0

4.0 5.0

VGS - Gate to Sorce Voltage - V

150

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

400

300

200

- Drain Current - mA

100

1000

FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT

= 3 V

100

★

| - Forward Transfer Admittance - mS

| y

TA = −25

25˚C 75˚C

125˚C

˚C

- Drain to Source Voltage - V

0.01 0.10.0010.0001

ID - Drain Current - A

= 4 V

3.5 V

3 V

2.5 V

810

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

VGS = 2.5 V

= 125

˚C

−25

˚C

- Drain to Source On-state Resistance - Ω

0.0001 0.001 0.1

DS(on)

- Drain Current - A

0.01

★

- Drain to Source On-state Resistance - Ω

0.0001 0.1 1

DS(on)

Data Sheet D13802EJ2V0DS00

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

VGS = 4 V

= 125

˚C

−25

˚C

0.010.001

- Drain Current - A

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2SK3107

- Capacitance - pF

★

rss

, C

oss

, C

iss

- Drain to Source On-state Resistance - Ω

DS(on)

100

0.1

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

VGS = 10 V

= 125

0.010.0010.0001

- Drain Current - A

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

f = 1 MHz

= 0 V

VDS - Drain to Source Voltage - V

˚C

−25

˚C

10.1

iss

oss

rss

1100.01 0.1 100

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

★

- Drain to Source On-state Resistance - Ω

DS (on)

1000

100

, tf - Swwitchig Time - ns

(off)

, tr, td

(on)

0.1 1 10

ID = 1 mA

10 mA

100 mA

12 16

VGS - Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

d(on)

d(off)

= 3 V

GS(on)

= 4V

= 10 Ω

- Drain Current - A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

0.1

0.01

0.001

- Source to Drain Current - A

0.0001

0.60.4

F(S-D)

- Source to Drain Voltage - V

0.8

1.0

1.2

Data Sheet D13802EJ2V0DS00

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[MEMO]

2SK3107

Data Sheet D13802EJ2V0DS00

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[MEMO]

2SK3107

Data Sheet D13802EJ2V0DS00

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[MEMO]

2SK3107

Data Sheet D13802EJ2V0DS00

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2SK3107

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