NEC 2sk3105 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SK3105

DESCRIPTION

The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

• Can be driven by a 4 V power source

• Low on-state resistance

DS(on)1

R

= 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

DS(on)2

R

= 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)

DS(on)3

R

= 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3105 3-pin Mini Mold (Thin Type)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse)

Note1

Total Power Dissipation P Total Power Dissipation

Note2

Channel Temperature T Storage Temperature T

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

P

ch

stg

30 V

±20 V

±2.5 A

±10 A

0.2 W

1.25 W 150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit : mm)

+0.1

0.4

–0.05

+0.1

–0.15

0.65

1.5

2.8 ±0.2

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate 2 : Source 3 : Drain

EQUIVALENT CIRCUIT

Gate

Gate Protection Diode

Marking: XA

0.9 to 1.1

Drain

Source

0.65

0.16

0 to 0.1

Body Diode

+0.1 –0.06

Notes 1.

Remark

PW ≤ 10 µs, Duty Cycle ≤ 1 %

2.

Mounted on FR4 Board, t ≤ 5 sec.

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D13293EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan

©

1998, 1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3105

Drain Cut-off Current I Gate Leakage Current I Gate Cut-off Voltage V

DSS

VDS = 30 V, VGS = 0 V –10

GSS

VGS = ±16 V, VDS = 0 V

GS(off)VDS

10

±

= 10 V, ID = 1 mA 1.0 1.6 2.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 1.5 A13.5S Drain to Source On-state Resi stance R

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

= 10 V, ID = 1.5 A5695m = 4.5 V, ID = 1.5 A 82 135 m = 4.0 V, ID = 1.5 A 91 150 m

Ω Ω Ω

VDS = 10 V 211 pF VGS = 0 V95pF f = 1 MHz 42 pF VDD = 10 V12ns ID = 1.0 A44ns

GS(on)

V

= 10 V28ns

RG = 10

Ω

DS

V

= 10 V2.1nC

15 ns

ID = 2.5 A0.61nC VGS = 4.0 V0.84nC

= 2.5 A, VGS = 0 V0.81V IF = 2.5 A, VGS = 0 V15ns di/dt = 90 A /

s3.7nC

µ

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

IG = 2 mA

50 Ω

D.U.T.

R

L

V

DD

PG.

V

GS

RG = 10 Ω

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

R

G

D.U.T.

V

L

R

V

Wave Form

V

DD

I

D

Wave Form

GS

0

10 %

V

GS(on)

90 %

PG.

90 %

D

I

10 %

0

t

r

t

d(on)

t

on

90 %

I

D

t

d(off)

10 %

t

f

t

off

2

Data Sheet D13293EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

30

60

90

TA - Ambient Temperature -

120

˚C

150

FORWARD BIAS SAFE OPERATING AREA

100

I

D

V)

R

(@V

DS(on)

Limited

=

GS

10

1

- Drain Current - A

D

I

0.1

Single Pulse Mounted on FR-4 Board of 50mm x 50mm x 1.6mm

0.01

0.1

DS

V

(pulse)

I

D

(

DC

)

5 s

100

10

ms

1

- Drain to Source Voltage - V

2SK3105

PW

=

1

ms

10 100

TRANSFER CHARACTERISTICS

10

VDS = 10 V

1

0.1

0.01

- Drain Current - A

0.001

D

I

0.0001

0.00001

FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT

100

V

DS

= 10V

10

1

= 125˚C

A

T

75˚C 25˚C 25˚C

−

10

2

34 5

VGS - Gate to Sorce Voltage - V

TA = −25

25

˚C ˚C

75

125

˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

2.0 V

DS

D

= 1 mA

I

= 10 V

1.8

1.6

1.4

1.2

- Gate to Source Cut-off Voltage - V

GS(off)

1.0

V

−50 T

ch

- Channel Temperature - ˚C

50 1000

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

150

VGS = 4.0 V

TA = 125˚C

75˚C

100

25˚C

150

0.1

| - Forward Transfer Admittance - S

fs

| y

0.01

ID - Drain Current - A

−

25˚C

- Drain to Source On-State Resistance - mΩ

1

100.1

Data Sheet D13293EJ1V0DS00

DS(on)

R

50

0.10.01

I

D

- Drain Current - A

1

10

3

2SK3105

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

150

VGS = 4.5 V

TA = 125˚C

100

- Drain to Source On-State Resistance - mΩ

50

DS(on)

R

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

75˚C

25˚C

−

25˚C

0.10.01

I

D

- Drain Current - A

1

150

ID = 1.5 A

GS

V

= 4.0 V

100

4.5 V

10 V

10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

100

VGS = 10 V

TA = 125˚C

75˚C

25˚C

- Drain to Source On-State Resistance - mΩ

DS(on)

R

50

0

−

25˚C

0.10.01

I

D

- Drain Current - A

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

200

ID = 1.5 A

150

100

10

50

- Drain to Source On-state Resistance - mΩ

0

DS (on)

−50

R

0

T

ch

- Channel Temperature -˚C

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

50 100 150

1000

100

Ciss, Coss, Crss - Capacitance - pF

10

1

V

DS

- Drain to Source Voltage - V

10 100

f = 1 MHz V

GS

= 0V

C

iss

C

oss

C

rss

50

- Drain to Source On-state Resistance - mΩ

0

DS (on)

R

0

4

VGS - Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

100

10

, tf - Swwitchig Time - ns

(off)

V

DD

1

0.1

= 10V

V

GS

(on) = 10V

R

G

= 10Ω

, tr, td

(on)

td

8

td

12

(off)

tf

1

I

D

- Drain Current - A

16 20

tr

td

(on)

10

4

Data Sheet D13293EJ1V0DS00

2SK3105

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

10

1

0.1

IF - Source to Drain Current - A

0.01

0.4 0.6

0.8 1.0

VF(S-D) - Source to Drain Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single Pulse

100

10

1.2

VGS - Gate to Source Voltage - V

Without Board

DYNAMIC INPUT CHARACTERISTICS

10

ID = 2.5 A

8

VDD = 10 V

6

6.0 V

4

2

0

13542

Qg - Gate Charge - nC

2

Mounted on 250 mm x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board

µ

- Transient Thermal Resistance - ˚C/W

th(ch-A)

r

1

10.001 0.01 0.1 10 100 1000

PW - Pulse Width - S

Data Sheet D13293EJ1V0DS00

5

[MEMO]

2SK3105

6

Data Sheet D13293EJ1V0DS00

[MEMO]

2SK3105

Data Sheet D13293EJ1V0DS00

7

2SK3105

• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

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M7 98. 8