NEC 2sk2484 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK2484

DESCRIPTION

The 2SK2484 is N-Channel MOS Field Effect Transistor de-

signed for high voltage switching applications.

FEATURES

• Low On-Resistance

RDS(on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A)

• Low Ciss Ciss = 1 200 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 900 V

Gate to Source Voltage VGSS ±30 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±10 A

Total Power Dissipation (Tc = 25 ˚C) PT1 75 W

Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W

Channel Temperature T

Storage Temperature Tstg –55 to +150 ˚C

Single Avalanche Current** IAS 5.0 A
Single Avalanche Energy** E

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

D(DC) ±5.0 A

ch 150 ˚C

AS 75 mJ

PACKAGE DIMENSIONS

(in millimeters)

10.6 MAX.

3.6 ± 0.2

10.0

3.0 ± 0.3

4

123

1.3 ± 0.2

0.75 ± 0.1

Gate

5.9 MIN.

6.0 MAX.

2.542.54

MP-25 (TO-220)

4.8 MAX.

1.3 ± 0.2

15.5 MAX.

0.5 ± 0.2

12.7 MIN.

1. Gate

2. Drain

3. Source

4. Fin (Drain)
JEDEC: TO-220AB

Drain

2.8 ± 0.2

Body
Diode

Document No. D10276EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

Source

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2484

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-State Resistance RDS(on) 2.2 2.8 VGS = 10 V, ID = 3.0 A

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 2.0 VDS = 20 V, ID = 3.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0

Input Capacitance Ciss 1 200 VDS = 10 V

Output Capacitance Coss 170 VGS = 0

Reverse Transfer Capacitance Crss 30 f = 1 MHz

Turn-On Delay Time td(on) 20 ID = 3.0 A

Rise Time tr 10 VGS = 10 V

Turn-Off Delay Time td(off) 70 VDD = 150 V

Fall Time tf 15 R

Total Gate Charge QG 40 ID = 5.0 A

Gate to Source Charge QGS 7 VDD = 450 V

Gate to Drain Charge QGD 17 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.0 IF = 5.0 A, VGS = 0

Reverse Recovery Time trr 670 IF = 5.0 A, VGS = 0

Reverse Recovery Charge Qrr 3.5 di/dt = 50 A/µs

UNIT

Ω

V

S

µ

A

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µ

C

= 10 Ω

G

Test Circuit 1 Avalanche Capability

D.U.T.

R

G = 25 Ω

PG

VGS = 20 - 0 V

VDD

50 Ω

ID

IAS

BVDSS

VDS

Starting Tch

L

DD

V

Test Circuit 2 Switching Time

D.U.T.

PG.

VGS
0

t

t = 1us
Duty Cycle ≤ 1 %

RG

G = 10 Ω

R

R

VDD

L

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

Test Circuit 3 Gate Charge

D.U.T.

I

G = 2 mA

PG.

50 Ω

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

RL

VDD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2484

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

10

ID(DC)

Limited

DS(on)

R

1

ID(pulse)

Power Dissipation Limited

ID - Drain Current - A

PW = 100 s

1 ms

10 ms

100 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

20

PT - Total Power Dissipation - W

0

20

40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

10

µ

VGS = 20 V

10 V

5

8 V
6 V

ID - Drain Current - A

TC = 25 ˚C
Single Pulse

0.1
1

10 100 1000

V

DS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100

TA = –25 ˚C

25 ˚C
75 ˚C

10

125 ˚C

1.0

ID - Drain Current - A

0.1

0

51015

GS - Gate to Source Voltage - V

V

Pulsed

DS = 10 V

V

0

4

V

DS - Drain to Source Voltage - V

8

12

16

3

1 000

2SK2484

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

rth(t) - Transient Thermal Resistance - ˚C/W

0.001
100

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

10

TA = –25 ˚C

125 ˚C

1.0

25 ˚C
75 ˚C

1 m 10 m 100 m 1 10 100 1 000 10

VDS = 20 V
Pulsed

PW - Pulse Width - s

Rth(ch-a) = 83.3(˚C/W)

Rth(ch-c) = 1.67(˚C/W)

Single Pulse
Tc =25 ˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

7

Pulsed

6

5

4

3

ID = 6 A

3 A
2 A

1.5 A

2

0.1

| yfs | - Forward Transfer Admittance - S

0.01

0.1

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

7

6

4

4

2

2

1

0

RDS(on) - Drain to Source On-State Resistance - Ω

0.1

1.0 10

ID - Drain Current - A

1.0 10

Pulsed
VGS = 10 V

1

0

RDS(on) - Drain to Source On-State Resistance - Ω

4

V

GS - Gate to Source Voltage - V

812

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

3

2

VGS(off) - Gate to Source Cutoff Voltage - V

–50

0 50 100 150

ch - Channel Temperature - ˚C

T

VDS = 10 V
I

D = 1 mA

4

2SK2484

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

5

4

3

ID = 3 A

ID = 2 A

2

1

–50

RDS(on) - Drain to Source On-State Resistance - Ω

0

ch - Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

100

GS = 10 V

V
Pulsed

VGS = 0
f = 1 MHz

Ciss

Coss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

VGS = 10 V

0.1

ISD - Diode Forward Current - A

0

0.5

V

SD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

100

10

VGS = 0 V

1.0

Pulsed

1.5

tr

tf

td(off)

td(on)

Ciss, Coss, Crss - Capacitance - pF

10

0.1

1 10 100

V

DS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10 000

1 000

100

trr - Reverse Recovery time - ns

10

0.1

1.0 10 100

I

D - Drain Current - A

Crss

di/dt = 50 A/ s

GS = 0

V

µ

td(on), tr, td(off), tf - Switching Time - ns

1.0

0.1

1.0 10 100

I

D - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

16

14

12

10

8

6

4

2

VGS - Gate to Source Voltage - V

0

10 20 30 40

Qg - Gate Charge - nC

VDD = 450 V

300 V
150 V

V

DD = 150 V

VGS = 10 V
RG = 10 Ω

D = 5 A

I

5

2SK2484

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

100

10

IAS = 5 A

E

AS

= 75 mJ

1.0

VDD = 150 V

IAS - Single Avalanche Current - A

VGS = 20 V → 0
RG = 25 Ω

0.1

100 1 m 10 m 100 m

µ

L - Inductive Load - H

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160

140

120

100

80

60

40

Energy Derating Factor - %

20

0

50 75 100 125 150

25

Starting T

ch - Starting Channel Temperature - ˚C

VDD = 150 V
R

G

= 25 Ω

V

GS

= 20 V → 0

≥

I

AS

5.0 A

6

2SK2484

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

7

2SK2484

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

8