Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2139
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 600 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (pulse)* ID(pulse) ±20 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 8.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 2.0 W
GSS ±30 V
AS 5.0 A
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2139
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-state Resistance RDS(on) 1.1 1.5 VGS = 10 V, ID = 2.5 A
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.5 VDS = 10 V, ID = 2.5 A
Drain Leakage Current IDSS 100 VDS = 600 V, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 930 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 40 f = 1 MHz
Turn-On Delay Time td(on) 20 VGS = 10 V
Rise Time tr 10 VDD = 150 V
Turn-Off Delay Time td(off) 60
Fall Time tf 12 R
Total Gate Charge QG 30 VGS = 10 V
Gate to Source Charge QGS 6.0 ID = 5.0 V
Gate to Drain Charge QGD 15 VDD = 450 V
Diode Forward Voltage VF(S-D) 1.0 IF = 5.0 A, VGS = 0
Reverse Recovery Time trr 320 IF = 5.0 A
Reverse Recovery Charge Qrr 1.4 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
C
ID = 2.5 A, R
= 60 Ω
L
= 10 Ω
G
Test Circuit 1 Avalanche Capability
D.U.T.
G = 25 Ω
R
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
I
G = 2 mA
PG.
50 Ω
L
V
RL
VDD
Test Circuit 2 Switching Time
D.U.T.
L
R
DD
PG.
RG
G = 10 Ω
R
VDD
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2139
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse)
= 20 V)
10
Limited (at V
DS (on)
R
GS
ID (DC)
Power Dissipation Limited
100 ms
1.0
ID - Drain Current - A
1 ms
10 ms
PW = 10 s
100 s
µ
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
60
40
20
PT - Total Power Dissipation - W
0
20 140 160
6040 80 100 120
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
5
ID - Drain Current - A
VGS = 20 V
Pulsed
10 V
8 V
6 V
TC = 25 ˚C
Single Pulse
0.1
DS - Drain to Source Voltage - V
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Tch = 125 ˚C
10
ID - Drain Current - A
1.0
0
GS - Gate to Source Volta
V
10 100 1 000
75 ˚C
25 ˚C
–25 ˚C
VDS = 10 V
Pulsed
510
e - V
01
DS - Drain to Source Voltage - V
V
105
3
Page 4
2SK2139
p
1 000
100
10
1
0.1
0.01
0.001
rth (ch-c) (t) - Transient Thermal Resistance - ˚C/W
10 100 1 m 10 m 100 m 1 10 100 1 000
µµ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 62.5 (˚C/W)
Rth (ch-c) = 3.57 (˚C/W)
C = 25 ˚C
T
Single Pulse
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.0
Pulsed
ID = 5 A
2.5 A
1.0
VDS = 10 V
Pulsed
| yfs | - Forward Transfer Admittance - S
0.1
I
1.0 100
D - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
4.0
2.0
VGS = 10 V
20 V
1.0
RDS (on) - Drain to Source On-State Resistance - Ω
I
10 100
D - Drain Current - A
Pulsed
1.0
0
RDS (on) - Drain to Source On-State Resistance - Ω
420
V
GS - Gate to Source Voltage (V)
81216
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VDS = 10 V
V
DS = 10 V
ID = 1mA
ID = 1mA
VGS (off) - Gate to Source Cutoff Voltage - V
0
–50 0 50 100 150
T
ch - Channel Tem
erature - ˚C
4
Page 5
2SK2139
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
ID = 2.5 A
1.0
0
–50 0 50 100
RDS (on) - Drain to Source On-State Resistance - Ω
T
ch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
VGS = 10 V
Pulsed
VGS = 0 V
f = 1 MHz
Ciss
150
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
10 V
1.0
ISD - Diode Forward Current - A
0.1
0
V
SD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
100
VGS = 0 V
1.5
2.01.00.5
tr
tf
100
10
Coss
Crss
Ciss, Coss, Crss - Capacitance - pF
1
0.1
1.0 1 000
DS - Drain to Source Voltage - V
V
10 100
DYNAMIC INPUT CHARACTERISTICS
800
ID = ID (DC)
VDS = 450 V
600
300 V
150 V
400
VGS
200
VDS - Drain to Source Voltage - V
VDS
0 10203040
Qg - Gate Charge - nC
16
14
12
10
8
6
4
VGS - Gate to Source Voltage - V
2
0
10
VDD = 150 V
VGS = 10 V
td (on), tr, td (off), tf - Switching Time - ns
RG = 10 Ω
1.0
1.0
D - Drain Current - A
I
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
800
600
400
200
trr - Reverse Recovery Time - ns
0
0.1
0.1
1.0 10 100
D - Drain Current - A
I
td (on)
td (off)
10 100
di/dt = 50 A/ s
µ
VGS = 0
10 100
5
Page 6
2SK2139
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS = 5A
1.0
RG = 25 Ω
V
DD = 150 V
V
GS = 20 V →0
IAS - Single Avalanche Current - A
0.1
Starting T
100
ch
µ
1 m 10 m 100 m
L - Inductance - H
E
AS
= 8.3 mJ
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
12
10
ID (peak)= ID (DC)
VDD = 150 V
8
6
4
2
EAS - Single Avalanche Energy - mJ
0
25 50
75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6
Page 7
2SK2139
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
Page 8
2SK2139
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Loading...