Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
FOR SWITCHING
2SK1584
DESCRIPTION
The 2SK1584 is a switching device which can be driven directly
by a 5-V power source.
The 2SK1584 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
actuator driver.
FEATURES
• Can be driven by a 5-V power source.
• Low On-state resistance :
DS(on)1
R
R
= 2.0 Ω MAX. (VGS = 4 V, ID = 0.3 A)
DS(on)2
= 1.5 Ω MAX. (VGS = 10 V, ID = 0.3 A)
ABSOLUTE MAXIMUM RATI NGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
DS
= 0 V) V
C
= 25°C) I
Note1
A
= 25°C)
Note2
Channel Temperature T
Storage Temperature T
Notes1.
2.
PW ≤ 10 ms, Duty Cycle ≤ 50%
Mounted on ceramic board of 16 cm2 × 0.7 mm
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
±20 V
±500 mA
±1.0 A
T
2.0 W
150 °C
−55 to +150 °C
30 V
PACKAGE DRAWING (Unit : mm)
4.5±0.1
.
0.42
±0.06
0.8MIN
1.6±0.2
2
1
1.5
3.0
0.47
±0.06
3
0.42
2.5±0.1
±0.06
1.5±0.1
4.0±0.25
+0.03
0.41
-0.05
Marking : NH
EQUIVALENT CIRCUIT
Drain
Internal
Gate
Gate
Protection
Diode
Source
Diode
Electrode
Connection
1.Source
2.Drain
3.Gate
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15283EJ2V0DS00 (2nd edition)
Date Published February 2001 NS CP (K)
Printed in Japan
The mark ★ shows major revised point s.
©
1991,2001
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK1584
Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V 1.0
GSS
VGS = ±20 V, VDS = 0 V ±10
GS(off) VDS
= 10 V, ID = 0.1 mA 1.3 1.85 2.5 V
Forward Transfer Admittance | yfs | VDS = 5 V, ID = 0.5 A 350 440 mS
DS(on)1 VGS
Drain to Source On-state Resistance
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DS(on)2 VGS
iss
oss
rss
d(on)
r
d(off)
f
= 4 V, ID = 0.3 A 1.2 2.0
= 10 V, ID = 0.3 A 0.65 1.5
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 10 V, ID = 0.3 A
GS(on)
= 4 V
V
G
R
= 10
Ω
L
= 33
R
Ω
60 pF
50 pF
9pF
80 ns
270 ns
100 ns
110 ns
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
L
R
V
GS
R
PG.
GS
V
G
0
Wave Form
V
DD
I
D
Wave Form
τ
10%
0
I
D
90%
10%
0
t
t
d(on)
r
90%
V
GS
(on)
90%
I
D
t
d(off)
10%
t
f
A
µ
A
µ
Ω
Ω
τ = 1 s
µ
Duty Cycle ≤ 1%
2
t
t
on
Data Sheet D15283EJ2V0DS
off
Page 3
★
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1584
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
dT - Derating Factor - %
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature -
˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERA TURE
2.5
2.0
Mounted on ceramic
board of
2
× 0.7 mm
16 cm
1.5
1.0
- Total Power Dissipation - W
0.5
T
P
0
300 15012060 18090
TA - Ambient Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
10
3
I
D(pulse)
PW
=
1
0.3
0.1
- Drain Current - A
D
I
0.03
0.01
Limited (V
DS(on)
R
TA = 25˚C
Single Pulse
V
DS
DRAIN CURRENT
4 V)
=
GS
13100.30.1
- Drain to Source Voltage - V
I
D(DC)
VS.
1 ms
DC
10
100 ms
ms
30 100
DRAIN TO SOURCE VOLTAGE
1.2
1.0
V
GS
= 4.0 V
0.8
0.6
0.4
- Drain Current - A
D
I
3.5 V
3.0 V
0.2
2.5 V
0
01234567
VDS - Drain to Source Voltage - V
V
DSS
Pulsed
TRANSFER CHARACTERISTICS
500
VDS = 10 V
Pulsed
100
10
- Drain Current - mA
D
I
1
TA = 150˚C
0.1
0123
VGS - Gate to Source Voltage - V
75˚C
25˚C
–25˚C
- Gate Cut-off Voltage - V
GS(off)
V
54
Data Sheet D15283EJ2V0DS
GATE CUT-OFF VOLTAGE vs.
3
CHANNEL TEMPERA TURE
V
I
DS =
D =
10 V
0.1 mA
2
1
0
300–30 15012060 90
Tch - Channel Temperature -
˚C
3
Page 4
2SK1584
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
10000
VDS = 5 V
Pulsed
3000
1000
TA = −25
˚C
25
300
100
30
| - Forward Transfer Admittance - mS
fs
| y
10
150
˚C
75
˚C
˚C
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
VGS = 4 V
Pulsed
2
1
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
30 300
10010 1000
D
- Drain Current - mA
I
100301031 300
T
A
= 150
−25
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
3
D
= 0.3 A
I
Pulsed
2
1
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
1000
0 4 8 1216202428
VGS - Gate to Source Voltage -
V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
3
˚C
75
˚C
25
˚C
˚C
2
VGS = 4 V
1
VGS = 10 V
I
D =
0.3 A
Pulsed
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
300–30 15012060 90
Tch - Channel Temperature -
˚C
1000
300
100
- Capacitance - pF
rss
,C
oss
,C
iss
C
4
30
10
3
1
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MH
Z
13100.30.1
V
DS
- Drain to Source Voltage - V
C
iss
C
oss
C
rss
30 100
Data Sheet D15283EJ2V0DS
10000
SWITCHING CHARACTERISTICS
300
100
td(off)
30
td(on),tr,td(off),tf - Switchig Time - ns
10
10 100 1000
30 300
D - Drain Current - mA
I
tf
V
V
R
td(on)
DD =
GS(on) =
G =
10 Ω
tr
10 V
4 V
Page 5
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V
GS
=
0 V
Pulsed
300
100
30
10
- Source to Drain Current - mA
3
SD
I
1
0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Source to Drain Voltage - V
2SK1584
Data Sheet D15283EJ2V0DS
5
Page 6
[MEMO]
2SK1584
6
Data Sheet D15283EJ2V0DS
Page 7
[MEMO]
2SK1584
Data Sheet D15283EJ2V0DS
7
Page 8
2SK1584
•
The information in this document is current as of February, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
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•
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•
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•
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M8E 00. 4
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