NEC 2sk1485 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.

FEATURES

• Directly driven by ICs having a 5 V power source.

• Low on-state resistance

DS(on)1

= 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)

R

DS(on)2

= 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)

R

• Complementary to 2SJ199.

2SK1485

PACKAGE DRAWING (Unit : mm)

4.5 ± 0.1

1

0.42
±0.06

0.8 MIN.

MARK : NC

1.6 ± 0.2

2

0.47

1.5

±0.06

3.0

1.Source

2.Drain

3.Gate

3

0.42
±0.06

2.5 ± 0.1

4.0 ± 0.25

1.5 ± 0.1

+0.03

0.41

–0.05

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V

DS

Gate to Source Voltage (V

★

Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (TA = 25°C)
Channel Temperature T
Storage Temperature T

Notes1.

2.

Remark

PW ≤ 10 ms, Duty Cycle ≤ 50%
Mounted on ceramic board of 16 cm

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

= 0 V) V

C

= 25°C) I

Note1

Note2

DSS

GSS

D(DC)

D(pulse)

I

T

P

ch

stg

2

× 0.7 mm

100 V

±20 V
±1.0 A
±2.0 A

2.0 W

150 °C

−55 to +150 °C

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

Document No. D15680EJ3V0DS00 (3rd edition)
(Previous No. TC-2349)
Date Published July 2001 NS CP(K)
Printed in Japan

The mark ★ shows major revised points.

©

1991, 2001

2SK1485

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

R

DSS

GSS

GS(off)

DS(on)1

DS(on)2

iss

oss

rss

d(on)

r

d(off)

f

VDS = 100 V, VGS = 0 V 10
VGS = ±20 V, VDS = 0 V

10

±

VDS = 10 V, ID = 1 mA 0.8 1.2 2.0 V

VGS = 4.0 V, ID = 0.5 A 0.6 1.2
VGS = 10 V, ID = 0.5 A 0.5 0.8
VDS = 10 V 230 pF
VGS = 0 V 80 pF
f = 1 MHz 12 pF
VDD = 25 V, ID = 0.5 A 14 ns
VGS = 10 V 14 ns
RG = 10

Ω

370 ns

65 ns

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 0.5 A 0.4 S
Drain to Source On-state Resistance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t

A

µ

A

µ

Ω
Ω

SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ = 1 s

µ

Duty Cycle ≤ 1%

G

τ

R

VDD

L

V

GS

Wave Form

ID

Wave Form

VGS

0

ID

0

10%

10%

t

d(on)

90%

t

on

90%

VGS

90%

ID

10%

t

r

t

d(off)

t

f

toff

2

Data Sheet D15680EJ3V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK1485

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0 20 40 60 80 100 120 140 160

TC - Case Temperature -

°C

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERA TURE

2.4
mounted on ceramic

board of 16 cm × 0.7 mm

2

2.0

1.6

FORWARD BIAS SAFE OPERATING AREA

4

I

D(pulse)

I

D(DC)

1

0.3

0.1

- Drain Current - A

D

I

0.03

TA = 25°C
Single Pulse

0.01
3101

V

DRAIN CURRENT
DRAIN TO SOURCE VOLTAGE

600

Pulsed

500

400

PW

= 1 m

10

s

ms

100

m

s

DC

V

DSS

30 100 300 1000

DS

- Drain to Source Voltage - V

VS.

3.0 V

2.5 V

1.2

0.8

- Total Power Dissipation - W

T

0.4

P

0

0 30 60 90 120 150 180

TA - Ambient Temperature -

TRANSFER CHARACTERISTICS

3

VDS = 10 V
Pulsed

1

0.1

- Drain Current - A

D

I

0.01

0.001
0 1.0 2.0 3.0

GS

- Gate to Source Voltage - V

V

°C

300

200

- Drain Current - mA

D

I

100

0

0 0.4 0.8 1.20.2 0.6 1.0 1.4

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

8.0
V

DS

= 10 V

f = 1MH

3.0

Z

1.0

0.3

0.1

| - Forward Transfer Admittance - S

fs

0.03

| y

0.3 10.03 0.10.004 0.01 2

I

D

- Drain Current - A

V

GS

= 2.0 V

Data Sheet D15680EJ3V0DS

3

2SK1485

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

1.1

D

I
Pulsed

0.9

0.7

0.5

0.3

- Drain to Source On-state Resistance - Ω

0.1

DS(on)

R

048121620

VGS - Gate to Source Voltage -

CAPACITANCE vs.

600

DRAIN TO SOURCE VOLTAGE

300

100

50
30

- Capacitance - pF

rss

,C

10

oss

,C

iss

5

C

3

13100.2

V

DS

- Drain to Source Voltage - V

30 100 200

= 0.5 A

V

VGS = 0 V
f = 1 MH

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

0.9

Pulsed

0.7
VGS = 4 V

0.5

VGS = 10 V

0.3

- Drain to Source On-state Resistance - Ω

DS(on)

0.1

R

0.3 3

D

- Drain Current - A

I

10.1

SWITCHING CHARACTERISTICS

800

Z

C

iss

300

100

C

oss

50

20
10

C

rss

5

td(on),tr,td(off),tf - Switchig Time - ns

3

0.03 0.3 3 10

td(off)

tf

td(on)
tr

0.1 1
I

D - Drain Current - A

V

DD =

25 V

V

GS =

10 V

R

G =

10 Ω

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

V

GS

=

Pulsed

0 V

1.4

1.2

1.0

0.8

0.6

0.4

- Source to Drain Current - A

SD

0.2

I

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

SD

- Source to Drain Voltage - V

V

4

Data Sheet D15680EJ3V0DS

[MEMO]

2SK1485

Data Sheet D15680EJ3V0DS

5

[MEMO]

2SK1485

6

Data Sheet D15680EJ3V0DS

[MEMO]

2SK1485

Data Sheet D15680EJ3V0DS

7

2SK1485

•

The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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M8E 00. 4