Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK1482 is N-channel vertical type MOS FET switching device which
can be directly driven from an IC operating with a 5 V single power supply.
The device featuring low on-state resistance is of the voltage drive type and
thus is ideal for driving actuators such as motors, solenoids, and relays.
FEATURES
• Low on-state resistance
DS(on)1
= 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)
R
DS(on)2
= 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)
R
• Voltage drive at logic level (VGS = 4 V) is possible.
• Bidirectional zener diode for protection is incorporated in
between the gate and the source.
• Inductive loads can be driven without protective circuit thanks
to the improved breakdown voltage between the drain and source.
• Can be used complementary with the 2SJ196.
2SK1482
PACKAGE DRAWING (Unit : mm)
5.2 MAX.
0.5
12.7 MAX. 5.5 MAX.
2.54
1.27
123
4.2 MAX.
1.77 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
DS
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15670EJ2V0DS00 (2 nd edi ti on )
(Previous No. TC-2344)
Date Published July 2001 NS CP(K)
Printed in Japan
= 0 V) V
C
= 25°C) I
Note
A
= 25°C) P
D(pulse)
I
The mark ★ shows major revised points.
DSS
GSS
D(DC)
T
ch
stg
30 V
±20 V
±1.5 A
±3.0 A
750 W
150 °C
−55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Body
Gate
Gate
Protection
Diode
Source
©
Diode
1991, 2001
Page 2
2SK1482
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
R
DSS
GSS
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
d(on)
r
d(off)
f
VDS = 30 V, VGS = 0 V 10
VGS = ±20 V, VDS = 0 V
10
±
VDS = 10 V, ID = 1 mA 1.3 1.8 2.5 V
VGS = 4.0 V, ID = 0.5 A 0.19 0.8
VGS = 10 V, ID = 0.5 A 0.15 0.4
VDS = 10 V 230 pF
VGS = 0 V 170 pF
f = 1 MHz 45 pF
VDD = 25 V, ID = 0.5 A 15 ns
VGS = 10 V 50 ns
RG = 10
Ω
420 ns
240 ns
Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 0.5 A 0.4 S
★
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
A
µ
A
µ
Ω
Ω
SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ = 1 s
µ
Duty Cycle ≤ 1%
G
τ
R
VDD
L
V
GS
Wave Form
ID
Wave Form
VGS
0
ID
0
10%
10%
t
d(on)
90%
t
on
90%
VGS
90%
ID
10%
t
r
t
d(off)
t
f
toff
2
Data Sheet D15670EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1482
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature -
°C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERA TURE
1.0
0.8
0.6
FORWARD BIAS SAFE OPERATING AREA
10
d
ite
im
L
= 4 V)
DS(on)
GS
R
1
(at V
0.1
- Drain Current - A
D
I
TA = 25°C
Single Pulse
0.01
V
DS
DRAIN CURRENT
DRAIN TO SOURCE VOLTAGE
3
2
I
D(pulse)
DC
PW
= 1 ms
10 ms
101
- Drain to Source Voltage - V
VS.
6 V
10 V
4 V
8 V
V
GS
DSS
V
= 3 V
100
Pulsed
0.4
0.2
- Total Power Dissipation - W
T
P
0
0 30 60 90 120 150 180
TA - Ambient Temperature -
TRANSFER CHARACTERISTICS
10
VDS = 10 V
Pulsed
1
0.1
- Drain Current - A
D
I
0.01
0.001
012 3
GS
- Gate to Source Voltage - V
V
°C
1
- Drain Current - A
D
I
0
0 0.5 1 1.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
1
0.1
| - Forward Transfer Admittance - S
fs
| y
4
0.01
I
D
- Drain Current - A
10.10.01 10
Data Sheet D15670EJ2V0DS
3
Page 4
2SK1482
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0.6
0.4
0.2
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
0 5 10 15 20 25 30 35
VGS - Gate to Source Voltage -
CAPACITANCE vs.
1000
DRAIN TO SOURCE VOLTAGE
100
- Capacitance - pF
rss
,C
oss
,C
iss
C
10
1100.1
V
DS
- Drain to Source Voltage - V
D
= 0.5 A
I
Pulsed
V
VGS = 0 V
f = 1 MH
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.8
Pulsed
0.6
0.4
0.2
4 V
VGS = 10 V
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
D
I
10.1 10
- Drain Current - A
SWITCHING CHARACTERISTICS
1000
Z
C
iss
C
oss
C
rss
100
td(off)
tf
tr
td(on)
V
DD =
25 V
V
GS =
10 V
R
G =
10 Ω
td(on),tr,td(off),tf - Switchig Time - ns
10
0.1 1 10
I
D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
=
Pulsed
0 V
1.4
1.2
1.0
0.8
0.6
0.4
- Source to Drain Current - A
SD
0.2
I
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
SD
- Source to Drain Voltage - V
V
4
Data Sheet D15670EJ2V0DS
Page 5
[MEMO]
2SK1482
Data Sheet D15670EJ2V0DS
5
Page 6
[MEMO]
2SK1482
6
Data Sheet D15670EJ2V0DS
Page 7
[MEMO]
2SK1482
Data Sheet D15670EJ2V0DS
7
Page 8
2SK1482
•
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M8E 00. 4
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